公开(公告)号：US20240321572A1

公开(公告)日：2024-09-26

申请号：US18186778

申请日：2023-03-20

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Li-Fong Lin ,  Yen-Chun Huang ,  Zhen-Cheng Wu ,  Chi On Chui ,  Chih-Tang Peng ,  Yu Ying Chen

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/762

CPC classification number: H01L21/0228 ,  H01L21/0217 ,  H01L21/28123 ,  H01L21/76224

Abstract: Provided are semiconductor devices and methods for manufacturing semiconductor devices. A method deposits conformal material to form a conformal liner in the trench and modifies the conformal liner such an upper liner portion is modified more than a lower liner portion. The deposition and modifying steps are repeated while a rate of deposition of the conformal material over a non-modified surface of the conformal liner is faster than a rate of deposition of the conformal material over a modified surface of the conformal liner to form a remaining unfilled gap with a V-shape. The method further includes depositing a conformal material in the remaining unfilled gap.