公开(公告)号：US12051614B2

公开(公告)日：2024-07-30

申请号：US17340734

申请日：2021-06-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsung Han Hsu ,  Kuan-Cheng Wang ,  Han-Ti Hsiaw ,  Shin-Yeu Tsai

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/306 ,  H01L21/324 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/76224 ,  H01L21/02271 ,  H01L21/30604 ,  H01L21/324 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/66795 ,  H01L29/785

Abstract: A method includes etching a semiconductor substrate to form trenches extending into the semiconductor substrate, and depositing a first dielectric layer into the trenches. The first dielectric layer fills lower portions of the trenches. A Ultra-Violet (UV) treatment is performed on the first dielectric layer in an oxygen-containing process gas. The method further includes depositing a second dielectric layer into the trenches. The second dielectric layer fills upper portions of the trenches. A thermal treatment is performed on the second dielectric layer in an additional oxygen-containing process gas. After the thermal treatment, an anneal is performed on the first dielectric layer and the second dielectric layer.

公开(公告)号：US09324603B2

公开(公告)日：2016-04-26

申请号：US13967558

申请日：2013-08-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shin-Yeu Tsai ,  Chia-Hui Lin ,  Ching-Yu Chen ,  Chui-Ya Peng

IPC: H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/76229

Abstract: A method is disclosed that includes the operations outlined below. An insulating material is disposed within a plurality of trenches on a semiconductor substrate and over the semiconductor substrate. The first layer is formed over the insulating material. The first layer and the insulating material are removed.

Abstract translation: 公开了一种包括以下概述的操作的方法。 绝缘材料设置在半导体衬底上并在半导体衬底之上的多个沟槽内。 第一层形成在绝缘材料上。 去除第一层和绝缘材料。

公开(公告)号：US09558955B2

公开(公告)日：2017-01-31

申请号：US14795299

申请日：2015-07-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ru-Shang Hsiao ,  Chi-Cherng Jeng ,  Chih-Mu Huang ,  Shin-Yeu Tsai ,  Fang-Wei Lin

IPC: H01L21/4763 ,  H01L21/3065 ,  H01L21/283 ,  H01L21/308 ,  H01L21/30 ,  H01L21/8234 ,  H01L29/66

CPC classification number: H01L21/3065 ,  H01L21/02068 ,  H01L21/283 ,  H01L21/28518 ,  H01L21/3003 ,  H01L21/3081 ,  H01L21/47635 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76883 ,  H01L21/82345 ,  H01L29/66545

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a metal gate stack over a semiconductor substrate. The method also includes performing a hydrogen-containing plasma treatment on the metal gate stack to modify a surface of the metal gate stack. The hydrogen-containing plasma treatment includes exciting a gas mixture including a first hydrogen-containing gas and a second hydrogen-containing gas to generate a hydrogen-containing plasma.

Abstract translation: 提供一种形成半导体器件结构的方法。 该方法包括在半导体衬底上形成金属栅叠层。 该方法还包括在金属栅极叠层上执行含氢等离子体处理以改变金属栅极叠层的表面。 含氢等离子体处理包括激发包括第一含氢气体和第二含氢气体的气体混合物以产生含氢等离子体。

公开(公告)号：US20210296160A1

公开(公告)日：2021-09-23

申请号：US17340734

申请日：2021-06-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsung Han Hsu ,  Kuan-Cheng Wang ,  Han-Ti Hsiaw ,  Shin-Yeu Tsai

IPC: H01L21/762 ,  H01L21/8234 ,  H01L21/02 ,  H01L21/306 ,  H01L21/324 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78

Abstract: A method includes etching a semiconductor substrate to form trenches extending into the semiconductor substrate, and depositing a first dielectric layer into the trenches. The first dielectric layer fills lower portions of the trenches. A Ultra-Violet (UV) treatment is performed on the first dielectric layer in an oxygen-containing process gas. The method further includes depositing a second dielectric layer into the trenches. The second dielectric layer fills upper portions of the trenches. A thermal treatment is performed on the second dielectric layer in an additional oxygen-containing process gas. After the thermal treatment, an anneal is performed on the first dielectric layer and the second dielectric layer.

公开(公告)号：US10276677B2

公开(公告)日：2019-04-30

申请号：US15494023

申请日：2017-04-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Wen Huang ,  Yun-Wen Chu ,  Hong-Hsien Ke ,  Chia-Hui Lin ,  Shin-Yeu Tsai ,  Shih-Chieh Chang

IPC: H01L29/423 ,  H01L21/02 ,  H01L21/311 ,  H01L29/06 ,  H01L29/40 ,  H01L29/66 ,  H01L29/78

Abstract: Semiconductor device structures and methods for forming the same are provided. A method for forming a semiconductor device structure includes forming a gate structure over a semiconductor substrate. The method also includes forming spacer elements adjoining sidewalls of the gate structure. The method further includes forming a protection material layer over the gate structure. The formation of the protection material layer includes a substantial non-plasma process. In addition, the method includes depositing a dielectric material layer over the protection material layer. The deposition of the dielectric material layer includes a plasma-involved process.

公开(公告)号：US20150048475A1

公开(公告)日：2015-02-19

申请号：US13967558

申请日：2013-08-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shin-Yeu Tsai ,  Chia-Hui Lin ,  Ching-Yu Chen ,  Chui-Ya Peng

IPC: H01L29/06 ,  H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/76229

Abstract: A method is disclosed that includes the operations outlined below. An insulating material is disposed within a plurality of trenches on a semiconductor substrate and over the semiconductor substrate. The first layer is formed over the insulating material. The first layer and the insulating material are removed.

Abstract translation: 公开了一种包括以下概述的操作的方法。 绝缘材料设置在半导体衬底上并在半导体衬底之上的多个沟槽内。 第一层形成在绝缘材料上。 去除第一层和绝缘材料。

公开(公告)号：US11049945B2

公开(公告)日：2021-06-29

申请号：US16398079

申请日：2019-04-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Wen Huang ,  Yun-Wen Chu ,  Hong-Hsien Ke ,  Chia-Hui Lin ,  Shin-Yeu Tsai ,  Shih-Chieh Chang

IPC: H01L29/49 ,  H01L29/423 ,  H01L21/02 ,  H01L21/311 ,  H01L29/06 ,  H01L29/40 ,  H01L29/78 ,  H01L29/66

Abstract: Semiconductor device structures and methods for forming the same are provided. A semiconductor device structure includes a gate structure over a semiconductor substrate. The gate structure includes a gate electrode layer and a gate dielectric layer covering a bottom surface and sidewalls of the gate electrode layer. The semiconductor device structure also includes spacer elements in contact with sidewalls of the gate structure and protruding from a top surface of the gate electrode layer. The semiconductor device structure also includes a first protection layer over the gate electrode layer and between the spacer elements. The semiconductor device structure also includes a dielectric layer over the first protection layer and between the spacer elements. A portion of the dielectric layer is between sidewalls of the spacer elements and sidewalls of the first protection layer.