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公开(公告)号：US20210305261A1
公开(公告)日：2021-09-30
申请号：US17346579
申请日：2021-06-14
Inventor： Yu-Jen CHEN , Wen-Hsi LEE , Ling-Sung WANG , I-Shan HUANG , Chan-yu HUNG
IPC: H01L27/11 , H01L23/528 , H01L27/088 , G06F30/39
Abstract: A method (of manufacturing a semiconductor device) includes: forming active regions including spacing apart neighboring active regions resulting in corresponding gaps; forming gate structures (overlying the active regions and the gaps) including locating intra-gap segments of the gate structures over the gaps, arranging each intra-gap segment to include two end regions separated by a central region, and at intersections between active regions and gate structures that is designated to be non-functional (flyover intersection), preventing formation of a functional connection between the two; and removing selected portions of at least some of the intra-gap segments including removing central regions of first selected intra-gap segments substantially without removing portions of corresponding end regions of the first selected intra-gap segments, and removing central regions and portions of end regions of second selected intra-gap segments for which corresponding end regions of the second intra-gap segments abut flyover intersections thereby trimming corresponding gate structures.
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公开(公告)号：US20230284428A1
公开(公告)日：2023-09-07
申请号：US18171949
申请日：2023-02-21
Inventor： Yu-Jen CHEN , Wen-Hsi LEE , Ling-Sung WANG , I-Shan HUANG , Chan-yu HUNG
IPC: H10B10/00 , H01L23/528 , H01L27/088 , G06F30/39
CPC classification number: H10B10/12 , H01L23/528 , H01L27/0886 , G06F30/39 , H01L29/785
Abstract: A semiconductor device includes: first and second active regions extending in a first direction and separated by a gap relative to a second direction; and gate structures correspondingly over the first and second active regions, the gate structures extending in the second direction; and for each active region, a portion of each of some but not all of the gate structures (gate extension) extending partially into the gap; and when viewing the gate structures as a group, the group having a notched profile relative to the second direction, where notches in the notched profile correspond to ones of the gate structures which are substantially free of extending into the gap.
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3.发明公开
公开(公告)号：US20240090190A1
公开(公告)日：2024-03-14
申请号：US18519559
申请日：2023-11-27
Inventor： Yu-Jen CHEN , Wen-Hsi LEE , Ling-Sung WANG , I-Shan HUANG , Chan-yu HUNG
IPC: H10B10/00 , G06F30/39 , H01L23/528 , H01L27/088
CPC classification number: H10B10/12 , G06F30/39 , H01L23/528 , H01L27/0886 , H01L29/785
Abstract: A semiconductor device includes: first and second active regions extending in a first direction and separated by a gap relative to a second direction substantially perpendicular to the first direction; and gate structures correspondingly over the first and second active regions, the gate structures extending in the second direction; and each of the gate structures extending at least unilaterally substantially beyond a first side of the corresponding first or second active region that is proximal to the gap or a second side of the corresponding first or second active region that is distal to the gap; and some but not all of the gate structures also extending bilaterally substantially beyond each of the first and second sides of the corresponding first or second active region.
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公开(公告)号：US20190341389A1
公开(公告)日：2019-11-07
申请号：US16512175
申请日：2019-07-15
Inventor： Yu-Jen CHEN , Wen-Hsi LEE , Ling-Sung WANG , I-Shan HUANG , Chan-yu HUNG
IPC: H01L27/11 , G06F17/50 , H01L23/528
Abstract: A semiconductor device includes: active regions arranged in a first grid oriented substantially parallel to a first direction; and gate electrodes arranged spaced apart in a second grid and overlying corresponding ones of the active regions, the second grid being oriented substantially parallel to a second direction, the second direction being substantially orthogonal to the first direction. The first gaps are interspersed correspondingly between neighboring ones of the active regions. For a flyover intersection at which a corresponding gate electrode crosses over a corresponding active region and for which the gate electrode is not functionally connected to the corresponding active region, the gate electrode does not extend substantially beyond the corresponding active region and so does not extend substantially into a corresponding one of the first gaps.
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公开(公告)号：US20180342523A1
公开(公告)日：2018-11-29
申请号：US15729307
申请日：2017-10-10
Inventor： Yu-Jen CHEN , Wen-Hsi LEE , Ling-Sung WANG , I-Shan HUANG , Chan-yu HUNG
IPC: H01L27/11 , H01L23/528 , G06F17/50
CPC classification number: H01L27/1104 , G06F17/5068 , H01L23/528 , H01L29/42376 , H01L29/4238 , H01L29/785
Abstract: A semiconductor device includes: active regions arranged in a first grid oriented parallel to a first direction; and gate electrodes arranged spaced apart in a second grid and overlying corresponding ones of the active regions, the second grid being oriented parallel to a second direction, the second direction being orthogonal to the first direction. The first gaps are interspersed between neighboring ones of the active regions. For a flyover intersection at which a corresponding gate electrode crosses over a corresponding active region and for which the gate electrode is not functionally connected to the corresponding active region, the gate electrode does not extend substantially beyond the corresponding active region and so does not extend substantially into the corresponding gap.
