公开(公告)号：US20240170277A1

公开(公告)日：2024-05-23

申请号：US18201453

申请日：2023-05-24

Applicant: Shanghai Huali Integrated Circuit Corporation

Inventor： Yenxia HAO

IPC: H01L21/02 ,  C23C16/36 ,  C23C16/455

CPC classification number: H01L21/02126 ,  C23C16/36 ,  C23C16/45536 ,  H01L21/0228

Abstract: The present application provides a method for increasing the process window to avoid bridging between the device's contact hole and gate, including: placing a semiconductor structure containing a gate structure in a reaction cavity, wherein reaction gases fed sequentially into the reaction cavity include the first reaction gas containing Si and Cl, a second reaction gas containing C and a third reaction gas containing O. Thus, a first film containing Cl is formed on the sidewalls of the gate structure. Further, a fourth reaction gas containing H is fed into the reaction cavity, after the fourth reaction gas completes reaction with Cl in the first film, a second film is formed on the sidewalls of the gate. A fifth gas containing N is then fed into the reaction cavity, which reacts with the second film to form a third film on the spacer of the gate structure.