Abstract:
A method of forming a memory cell is provided that includes forming a steering element above a substrate, forming a material layer on the substrate, patterning and etching the material layer, and oxidizing the patterned and etched material layer to form a reversible resistance-switching material. Numerous other aspects are provided.
Abstract:
A method of forming a memory cell is provided that includes forming a steering element above a substrate, forming a material layer on the substrate, patterning and etching the material layer, and oxidizing the patterned and etched material layer to form a reversible resistance-switching material. Numerous other aspects are provided.