公开(公告)号：US11791394B2

公开(公告)日：2023-10-17

申请号：US18053777

申请日：2022-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangjun Yun ,  Uihui Kwon ,  Seongnam Kim ,  Hyoshin Ahn

IPC: H01L29/49 ,  H01L29/78 ,  H01L29/66 ,  H01L21/28

CPC classification number: H01L29/4966 ,  H01L21/28088 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7851

Abstract: Provided are metal oxide field-effect transistor (MOSFET) devices having a metal gate structure, in which a work function of the metal gate structure is uniform along a length direction of a channel, and manufacturing methods thereof. The MOSFET devices include a semiconductor substrate, an active area on the semiconductor substrate and extending in a first direction, and a gate structure on the semiconductor substrate. The gate structure extends across the active area in a second direction that traverses the first direction and comprises a high-k layer, a first metal layer, a work function control (WFC) layer, and a second metal layer, which are sequentially stacked on the active area. A lower surface of the WFC layer may be longer than a first interface between a lower surface of the first metal layer and an upper surface of the high-k layer in the first direction.

公开(公告)号：US20190140163A1

公开(公告)日：2019-05-09

申请号：US16021708

申请日：2018-06-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangjun Yun ,  Sang-Kuk Kim ,  Jae Hoon Kim ,  Eunsun Noh ,  Se Chung Oh ,  Sung Chul Lee ,  Daeeun Jeong

IPC: H01L43/02 ,  H01L43/10 ,  G11C11/16 ,  H01L27/22 ,  H01L43/12

Abstract: Magnetic memory devices are provided. A magnetic memory device includes a first electrode on a substrate, a magnetic tunnel junction pattern including a first magnetic layer, a tunnel barrier layer, and a second magnetic layer, which are sequentially stacked on the first electrode, and a second electrode on the magnetic tunnel junction pattern. A surface binding energy of the first electrode and/or the second electrode with respect to the magnetic tunnel junction pattern is relatively low.

公开(公告)号：US11522064B2

公开(公告)日：2022-12-06

申请号：US17206832

申请日：2021-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangjun Yun ,  Uihui Kwon ,  Seongnam Kim ,  Hyoshin Ahn

IPC: H01L29/49 ,  H01L29/78 ,  H01L29/66 ,  H01L21/28

Abstract: Provided are metal oxide field-effect transistor (MOSFET) devices having a metal gate structure, in which a work function of the metal gate structure is uniform along a length direction of a channel, and manufacturing methods thereof. The MOSFET devices include a semiconductor substrate, an active area on the semiconductor substrate and extending in a first direction, and a gate structure on the semiconductor substrate. The gate structure extends across the active area in a second direction that traverses the first direction and comprises a high-k layer, a first metal layer, a work function control (WFC) layer, and a second metal layer, which are sequentially stacked on the active area. A lower surface of the WFC layer may be longer than a first interface between a lower surface of the first metal layer and an upper surface of the high-k layer in the first direction.