公开(公告)号：US09941122B2

公开(公告)日：2018-04-10

申请号：US15249903

申请日：2016-08-29

申请人： Samsung Electronics Co., Ltd.

发明人： Jung-Ik Oh ,  Daehyun Jang ,  Ha-Na Kim ,  Kyoungsub Shin

IPC分类号： H01L25/00 ,  H01L27/11 ,  H01L45/00 ,  H01L21/027 ,  H01L27/11575 ,  H01L27/11582 ,  H01L21/306 ,  H01L21/308 ,  H01L27/11556 ,  H01L27/24 ,  H01L25/065 ,  H01L27/11521

CPC分类号： H01L21/0274 ,  H01L21/30604 ,  H01L21/3085 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/11521 ,  H01L27/11556 ,  H01L27/11575 ,  H01L27/11582 ,  H01L27/2481 ,  H01L45/122 ,  H01L45/1253 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a staircase-shaped connection structure of a three-dimensional semiconductor device. The device includes an electrode structure on a substrate, the electrode structure including an upper staircase region, a lower staircase region, and a buffer region therebetween. The electrode structure includes horizontal electrodes sequentially stacked on the substrate, the horizontal electrodes include a plurality of pad regions constituting a staircase structure of each of the upper and lower staircase regions, and the buffer region has a width that is larger than that of each of the pad regions.

公开(公告)号：US10685837B2

公开(公告)日：2020-06-16

申请号：US16240216

申请日：2019-01-04

申请人： Samsung Electronics Co., Ltd.

发明人： Jung-Ik Oh ,  Daehyun Jang ,  Ha-Na Kim ,  Kyoungsub Shin

IPC分类号： H01L21/027 ,  H01L27/11575 ,  H01L27/11582 ,  H01L21/306 ,  H01L21/308 ,  H01L27/11556 ,  H01L27/24 ,  H01L25/065 ,  H01L25/00 ,  H01L27/11521 ,  H01L45/00

摘要： Provided is a staircase-shaped connection structure of a three-dimensional semiconductor device. The device includes an electrode structure on a substrate, the electrode structure including an upper staircase region, a lower staircase region, and a buffer region therebetween. The electrode structure includes horizontal electrodes sequentially stacked on the substrate, the horizontal electrodes include a plurality of pad regions constituting a staircase structure of each of the upper and lower staircase regions, and the buffer region has a width that is larger than that of each of the pad regions.

公开(公告)号：US10211053B2

公开(公告)日：2019-02-19

申请号：US15910583

申请日：2018-03-02

申请人： Samsung Electronics Co., Ltd.

发明人： Jung-Ik Oh ,  Daehyun Jang ,  Ha-Na Kim ,  Kyoungsub Shin

IPC分类号： H01L21/027 ,  H01L27/11556 ,  H01L21/306 ,  H01L27/24 ,  H01L21/308 ,  H01L27/11582 ,  H01L27/11575 ,  H01L45/00 ,  H01L27/11521 ,  H01L25/00 ,  H01L25/065

摘要： Provided is a staircase-shaped connection structure of a three-dimensional semiconductor device. The device includes an electrode structure on a substrate, the electrode structure including an upper staircase region, a lower staircase region, and a buffer region therebetween. The electrode structure includes horizontal electrodes sequentially stacked on the substrate, the horizontal electrodes include a plurality of pad regions constituting a staircase structure of each of the upper and lower staircase regions, and the buffer region has a width that is larger than that of each of the pad regions.