公开(公告)号：US10206247B2

公开(公告)日：2019-02-12

申请号：US14856473

申请日：2015-09-16

Applicant: STMICROELECTRONICS ASIA PACIFIC PTE LTD ,  STMICROELECTRONICS, INC.

Inventor： Fuchao Wang ,  Olivier Le Neel ,  Ravi Shankar

IPC: H05B3/00 ,  H05B1/02 ,  H05B3/12 ,  H05B3/34 ,  H01L23/34 ,  H05B3/02 ,  H05B3/06

Abstract: An integrated circuit is provided having an active circuit. A heating element is adjacent to the active circuit and configured to heat the active circuit. A temperature sensor is also adjacent to the active circuit and configured to measure a temperature of the active circuit. A temperature controller is coupled to the active circuit and configured to receive a temperature signal from the temperature sensor. The temperature controller operates the heating element to heat the active circuit to maintain the temperature of the active circuit in a selected temperature range.

公开(公告)号：US11140750B2

公开(公告)日：2021-10-05

申请号：US16233926

申请日：2018-12-27

Applicant: STMICROELECTRONICS ASIA PACIFIC PTE LTD ,  STMICROELECTRONICS, INC.

Inventor： Fuchao Wang ,  Olivier Leneel ,  Ravi Shankar

IPC: H05B3/00 ,  H05B1/02 ,  H05B3/34 ,  H05B3/12 ,  H01L23/34 ,  H05B3/02 ,  H05B3/06

Abstract: An integrated circuit is provided having an active circuit. A heating element is adjacent to the active circuit and configured to heat the active circuit. A temperature sensor is also adjacent to the active circuit and configured to measure a temperature of the active circuit. A temperature controller is coupled to the active circuit and configured to receive a temperature signal from the temperature sensor. The temperature controller operates the heating element to heat the active circuit to maintain the temperature of the active circuit in a selected temperature range.

公开(公告)号：US09165853B2

公开(公告)日：2015-10-20

申请号：US14586231

申请日：2014-12-30

Applicant: STMICROELECTRONICS ASIA PACIFIC PTE LTD ,  STMICROELECTRONICS, INC.

Inventor： Fuchao Wang ,  Olivier Leneel ,  Ravi Shankar

IPC: H05B1/02 ,  H01L23/34 ,  H05B3/12 ,  H05B3/34 ,  H05B3/02

CPC classification number: H05B3/0014 ,  H01L23/34 ,  H01L23/345 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2924/15311 ,  H05B1/0227 ,  H05B3/02 ,  H05B3/06 ,  H05B3/12 ,  H05B3/34 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An integrated circuit is provided having an active circuit. A heating element is adjacent to the active circuit and configured to heat the active circuit. A temperature sensor is also adjacent to the active circuit and configured to measure a temperature of the active circuit. A temperature controller is coupled to the active circuit and configured to receive a temperature signal from the temperature sensor. The temperature controller operates the heating element to heat the active circuit to maintain the temperature of the active circuit in a selected temperature range.

Abstract translation: 提供具有有源电路的集成电路。 加热元件邻近有源电路并且被配置为加热有源电路。 温度传感器也与有源电路相邻并且被配置为测量有源电路的温度。 温度控制器耦合到有源电路并被配置为从温度传感器接收温度信号。 温度控制器操作加热元件以加热有源电路以将有源电路的温度保持在所选择的温度范围内。

公开(公告)号：US11856657B2

公开(公告)日：2023-12-26

申请号：US17472247

申请日：2021-09-10

Applicant: STMICROELECTRONICS ASIA PACIFIC PTE LTD ,  STMICROELECTRONICS, INC.

Inventor： Fuchao Wang ,  Olivier Leneel ,  Ravi Shankar

IPC: H05B3/00 ,  H05B1/02 ,  H05B3/34 ,  H05B3/12 ,  H01L23/34 ,  H05B3/02 ,  H05B3/06

CPC classification number: H05B3/0014 ,  H01L23/34 ,  H01L23/345 ,  H05B1/0227 ,  H05B3/02 ,  H05B3/06 ,  H05B3/12 ,  H05B3/34 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2924/15311 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2924/15311 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2224/73204 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2924/00 ,  H01L2924/15311 ,  H01L2224/73204 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2924/00

Abstract: An integrated circuit is provided having an active circuit. A heating element is adjacent to the active circuit and configured to heat the active circuit. A temperature sensor is also adjacent to the active circuit and configured to measure a temperature of the active circuit. A temperature controller is coupled to the active circuit and configured to receive a temperature signal from the temperature sensor. The temperature controller operates the heating element to heat the active circuit to maintain the temperature of the active circuit in a selected temperature range.

公开(公告)号：US10654714B2

公开(公告)日：2020-05-19

申请号：US15234312

申请日：2016-08-11

Applicant: STMICROELECTRONICS, INC.

Inventor： Ming Fang ,  Fuchao Wang

IPC: B81C1/00 ,  B41J2/14 ,  B41J2/16 ,  B81B1/00 ,  H01L49/02

Abstract: An integrated semiconductor heating assembly includes a semiconductor substrate, a chamber formed therein, and an exit port in fluid communication with the chamber, allowing fluid to exit the chamber in response to heating the chamber. The integrated heating assembly includes a first heating element adjacent the chamber, which can generate heat above a selected threshold and bias fluid in the chamber toward the exit port. A second heating element is positioned adjacent the exit port to generate heat above a selected threshold, facilitating movement of the fluid through the exit port away from the chamber. Addition of the second heating element reduces the amount of heat emitted per heating element and minimizes thickness of a heat absorption material toward an open end of the exit port. Since such material is expensive, this reduces the manufacturing cost and retail price of the assembly while improving efficiency and longevity thereof.

公开(公告)号：US09443801B2

公开(公告)日：2016-09-13

申请号：US14673300

申请日：2015-03-30

Applicant: STMicroelectronics, Inc.

Inventor： Hai Ding ,  Fuchao Wang ,  Zhiyong Xie

IPC: H01L21/4763 ,  H01L23/525 ,  H01L21/768 ,  H01L27/108

CPC classification number: H01L23/5256 ,  H01L21/76892 ,  H01L23/5258 ,  H01L27/10894 ,  H01L2924/0002 ,  Y02E60/12 ,  H01L2924/00

Abstract: Methods of fabricating a multi-layer semiconductor structure are provided. In one embodiment, a method includes depositing a first dielectric layer over a semiconductor structure, depositing a first metal layer over the first dielectric layer, patterning the first metal layer to form a plurality of first metal lines, and depositing a second dielectric layer over the first metal lines and the first dielectric layer. The method also includes removing a portion of the second dielectric layer over selected first metal lines to expose a respective top surface of each of the selected first metal lines. The method further includes reducing a thickness of the selected first metal lines to be less than a thickness of the unselected first metal lines. A multi-layer semiconductor structure is also provided.

公开(公告)号：US09434166B2

公开(公告)日：2016-09-06

申请号：US14316487

申请日：2014-06-26

Applicant: STMicroelectronics, Inc.

Inventor： Ming Fang ,  Fuchao Wang

IPC: F24H1/18 ,  F24H1/20 ,  B41J2/05 ,  B41J2/16 ,  B41J2/14

CPC classification number: B81C1/00119 ,  B41J2/14056 ,  B41J2/14072 ,  B41J2/14137 ,  B41J2/16 ,  B41J2/1601 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1639 ,  B81B1/006 ,  B81B2201/052 ,  B81B2201/058 ,  B81C2201/013 ,  B81C2203/075 ,  H01L28/20 ,  Y10T29/41 ,  Y10T29/49401 ,  Y10T29/49826

Abstract: An integrated semiconductor heating assembly includes a semiconductor substrate, a chamber formed therein, and an exit port in fluid communication with the chamber, allowing fluid to exit the chamber in response to heating the chamber. The integrated heating assembly includes a first heating element adjacent the chamber, which can generate heat above a selected threshold and bias fluid in the chamber toward the exit port. A second heating element is positioned adjacent the exit port to generate heat above a selected threshold, facilitating movement of the fluid through the exit port away from the chamber. Addition of the second heating element reduces the amount of heat emitted per heating element and minimizes thickness of a heat absorption material toward an open end of the exit port. Since such material is expensive, this reduces the manufacturing cost and retail price of the assembly while improving efficiency and longevity thereof.

公开(公告)号：US20150206839A1

公开(公告)日：2015-07-23

申请号：US14673300

申请日：2015-03-30

Applicant: STMicroelectronics, Inc.

Inventor： Hai Ding ,  Fuchao Wang ,  Zhiyong Xie

IPC: H01L23/525 ,  H01L21/768

CPC classification number: H01L23/5256 ,  H01L21/76892 ,  H01L23/5258 ,  H01L27/10894 ,  H01L2924/0002 ,  Y02E60/12 ,  H01L2924/00

Abstract: Methods of fabricating a multi-layer semiconductor structure are provided. In one embodiment, a method includes depositing a first dielectric layer over a semiconductor structure, depositing a first metal layer over the first dielectric layer, patterning the first metal layer to form a plurality of first metal lines, and depositing a second dielectric layer over the first metal lines and the first dielectric layer. The method also includes removing a portion of the second dielectric layer over selected first metal lines to expose a respective top surface of each of the selected first metal lines. The method further includes reducing a thickness of the selected first metal lines to be less than a thickness of the unselected first metal lines. A multi-layer semiconductor structure is also provided.

Abstract translation: 提供制造多层半导体结构的方法。 在一个实施例中，一种方法包括在半导体结构上沉积第一介电层，在第一介电层上沉积第一金属层，图案化第一金属层以形成多个第一金属线，以及在第 第一金属线和第一介电层。 该方法还包括在所选择的第一金属线上去除第二电介质层的一部分以暴露每个所选择的第一金属线的相应顶表面。 该方法还包括将所选择的第一金属线的厚度减小到小于未选择的第一金属线的厚度。 还提供了多层半导体结构。

公开(公告)号：US20140304990A1

公开(公告)日：2014-10-16

申请号：US14316487

申请日：2014-06-26

Applicant: STMicroelectronics, Inc.

Inventor： Ming Fang ,  Fuchao Wang

IPC: B41J2/16

CPC classification number: B81C1/00119 ,  B41J2/14056 ,  B41J2/14072 ,  B41J2/14137 ,  B41J2/16 ,  B41J2/1601 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1639 ,  B81B1/006 ,  B81B2201/052 ,  B81B2201/058 ,  B81C2201/013 ,  B81C2203/075 ,  H01L28/20 ,  Y10T29/41 ,  Y10T29/49401 ,  Y10T29/49826

Abstract: An integrated semiconductor heating assembly includes a semiconductor substrate, a chamber formed therein, and an exit port in fluid communication with the chamber, allowing fluid to exit the chamber in response to heating the chamber. The integrated heating assembly includes a first heating element adjacent the chamber, which can generate heat above a selected threshold and bias fluid in the chamber toward the exit port. A second heating element is positioned adjacent the exit port to generate heat above a selected threshold, facilitating movement of the fluid through the exit port away from the chamber. Addition of the second heating element reduces the amount of heat emitted per heating element and minimizes thickness of a heat absorption material toward an open end of the exit port. Since such material is expensive, this reduces the manufacturing cost and retail price of the assembly while improving efficiency and longevity thereof.

Abstract translation: 集成半导体加热组件包括半导体衬底，形成在其中的腔室以及与腔室流体连通的出口，允许流体响应于加热室而离开腔室。 集成加热组件包括邻近腔室的第一加热元件，该第一加热元件可以产生高于选定阈值的热量，并将腔室中的流体朝向出口偏压。 第二加热元件邻近出口定位以产生高于所选阈值的热量，便于流体通过出口远离腔室的运动。 添加第二加热元件减少了每个加热元件发出的热量，并使吸热材料的厚度最小化到出口的开口端。 由于这样的材料是昂贵的，所以这降低了组件的制造成本和零售价格，同时提高了其效率和使用寿命。