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公开(公告)号:US20230170311A1
公开(公告)日:2023-06-01
申请号:US18161693
申请日:2023-01-30
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: ChangOh Kim , KyoungHee Park , SeongHwan Park , JinHee Jung
CPC classification number: H01L23/552 , H01L23/31 , H01L21/486 , H01Q1/2283 , H01L21/56 , H01L23/66
Abstract: A semiconductor device has a first package layer. A first shielding layer is formed over the first package layer. The first shielding layer is patterned to form a redistribution layer. An electrical component is disposed over the redistribution layer. An encapsulant is deposited over the electrical component. A second shielding layer is formed over the encapsulant. The second shielding layer is patterned. The patterning of the first shielding layer and second shielding layer can be done with a laser. The second shielding layer can be patterned to form an antenna.
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公开(公告)号:US11862572B2
公开(公告)日:2024-01-02
申请号:US18161693
申请日:2023-01-30
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: ChangOh Kim , KyoungHee Park , SeongHwan Park , JinHee Jung
CPC classification number: H01L23/552 , H01L21/486 , H01L21/56 , H01L23/31 , H01L23/66 , H01Q1/2283
Abstract: A semiconductor device has a first package layer. A first shielding layer is formed over the first package layer. The first shielding layer is patterned to form a redistribution layer. An electrical component is disposed over the redistribution layer. An encapsulant is deposited over the electrical component. A second shielding layer is formed over the encapsulant. The second shielding layer is patterned. The patterning of the first shielding layer and second shielding layer can be done with a laser. The second shielding layer can be patterned to form an antenna.
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公开(公告)号:US20220359420A1
公开(公告)日:2022-11-10
申请号:US17314916
申请日:2021-05-07
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: ChangOh Kim , KyoungHee Park , SeongHwan Park , JinHee Jung
Abstract: A semiconductor device has a first package layer. A first shielding layer is formed over the first package layer. The first shielding layer is patterned to form a redistribution layer. An electrical component is disposed over the redistribution layer. An encapsulant is deposited over the electrical component. A second shielding layer is formed over the encapsulant. The second shielding layer is patterned. The patterning of the first shielding layer and second shielding layer can be done with a laser. The second shielding layer can be patterned to form an antenna.
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公开(公告)号:US20240113038A1
公开(公告)日:2024-04-04
申请号:US18511428
申请日:2023-11-16
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: ChangOh Kim , KyoungHee Park , SeongHwan Park , JinHee Jung
CPC classification number: H01L23/552 , H01L21/486 , H01L21/56 , H01L23/31 , H01L23/66 , H01Q1/2283
Abstract: A semiconductor device has a first package layer. A first shielding layer is formed over the first package layer. The first shielding layer is patterned to form a redistribution layer. An electrical component is disposed over the redistribution layer. An encapsulant is deposited over the electrical component. A second shielding layer is formed over the encapsulant. The second shielding layer is patterned. The patterning of the first shielding layer and second shielding layer can be done with a laser. The second shielding layer can be patterned to form an antenna.
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公开(公告)号:US11610847B2
公开(公告)日:2023-03-21
申请号:US17314916
申请日:2021-05-07
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: ChangOh Kim , KyoungHee Park , SeongHwan Park , JinHee Jung
Abstract: A semiconductor device has a first package layer. A first shielding layer is formed over the first package layer. The first shielding layer is patterned to form a redistribution layer. An electrical component is disposed over the redistribution layer. An encapsulant is deposited over the electrical component. A second shielding layer is formed over the encapsulant. The second shielding layer is patterned. The patterning of the first shielding layer and second shielding layer can be done with a laser. The second shielding layer can be patterned to form an antenna.
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