公开(公告)号：US20210094144A1

公开(公告)日：2021-04-01

申请号：US16584145

申请日：2019-09-26

Applicant: SKC Co., Ltd.

Inventor： Jaein AHN ,  Jang Won SEO ,  Jong Wook YUN ,  Sunghoon YUN ,  Hye Young HEO ,  Su Young MOON

IPC: B24B37/24 ,  C08G18/50 ,  C08G18/38 ,  C08G18/62 ,  C08L75/04 ,  C08G18/10 ,  H01L21/321 ,  B24B37/22

Abstract: A polishing pad includes a polyurethane, wherein the polyurethane includes a fluorinated repeating unit represented by Formula 1, wherein the number of defects on a substrate after polishing with the polishing pad and a fumed silica slurry is 40 or less; wherein R11 and R12 are each independently selected from the group consisting of hydrogen, C1-C10 alkyl groups, and fluorine, with the proviso that at least one of R11 and R12 is fluorine, L is a C1-C5 alkylene group or —O—, R13 and R14 are each independently selected from the group consisting of hydrogen, C1-C10 alkyl groups, and fluorine, with the proviso that at least one of R13 and R14 is fluorine, and n and m are each independently an integer from 0 to 20, with the proviso that n and m are not simultaneously 0.

公开(公告)号：US20180339394A1

公开(公告)日：2018-11-29

申请号：US15989403

申请日：2018-05-25

Applicant: SKC CO., LTD.

Inventor： Jaein AHN ,  Jang Won SEO ,  Sunghoon YUN ,  Su Young MOON ,  Myung-Ok KYUN

IPC: B24B37/24 ,  H01L21/321 ,  C08G18/10 ,  C08J9/32

CPC classification number: B24B37/24 ,  C08G18/10 ,  C08G18/2027 ,  C08G18/3243 ,  C08G2101/0066 ,  C08J9/32 ,  C08J2203/22 ,  C08J2205/044 ,  C08J2205/05 ,  C08J2207/00 ,  C08J2375/04 ,  H01L21/3212 ,  H01L23/53257

Abstract: The embodiments relate to a porous polyurethane polishing pad and a process for preparing a semiconductor device by using the same. The porous polyurethane polishing pad comprises a urethane-based prepolymer and a curing agent, and has a thickness of 1.5 to 2.5 mm, a number of pores whose average diameter is 10 to 60 μm, a specific gravity of 0.7 to 0.9 g/cm3, a surface hardness at 25° C. of 45 to 65 Shore D, a tensile strength of 15 to 25 N/mm2, an elongation of 80 to 250%, an AFM (atomic force microscope) elastic modulus of 101 to 250 MPa measured from a polishing surface in direct contact with an object to be polished to a predetermined depth wherein the predetermined depth is 1 to 10 μm.

公开(公告)号：US20210094143A1

公开(公告)日：2021-04-01

申请号：US16584081

申请日：2019-09-26

Applicant: SKC Co., Ltd.

Inventor： Jaein AHN ,  Jang Won SEO ,  Jong Wook YUN ,  Sunghoon YUN ,  Hye Young HEO ,  Su Young MOON

IPC: B24B37/24 ,  B24B37/22 ,  H01L21/306

Abstract: A polishing pad includes a polyurethane, wherein the polyurethane includes in its main chain a silane repeating unit represented by Formula 1, wherein the number of defects on a substrate after polishing with the polishing pad and a fumed silica slurry is about 40 or less wherein R11 and R12 are each independently hydrogen or C1-C10 alkyl groups, and n is an integer from 1 to 30.

公开(公告)号：US20180339393A1

公开(公告)日：2018-11-29

申请号：US15989396

申请日：2018-05-25

Applicant: SKC CO., LTD.

Inventor： Jaein AHN ,  Jang Won SEO ,  Sunghoon YUN ,  Su Young MOON ,  Myung-Ok KYUN

IPC: B24B37/24 ,  H01L21/3105

Abstract: The embodiments relate to a porous polyurethane polishing pad and a process for preparing a semiconductor device by using the same. The porous polyurethane polishing pad comprises a urethane-based prepolymer and a curing agent, and has a thickness of 1.5 to 2.5 mm, a number of pores whose average diameter is 10 to 60 μm, a specific gravity of 0.7 to 0.9 g/cm3, a surface hardness at 25° C. of 45 to 65 Shore D, a tensile strength of 15 to 25 N/mm2, an elongation of 80 to 250%, an AFM (atomic force microscope) elastic modulus of 30 to 100 MPa measured from a polishing surface in direct contact with an object to be polished to a predetermined depth wherein the predetermined depth is 1 to 10 μm.

公开(公告)号：US20190389033A1

公开(公告)日：2019-12-26

申请号：US16395993

申请日：2019-04-26

Applicant: SKC CO., LTD.

Inventor： Sunghoon YUN ,  Jang Won SEO ,  Hye Young HEO ,  Jong Wook YUN ,  Jaein AHN ,  Su Young MOON

IPC: B24B37/26 ,  B24B37/22

Abstract: Provided is a polishing pad that comprises a plurality of first grooves that have a shape of geometric figures that share a center; and a plurality of second grooves that radially extend from the center to the outer perimeter, wherein the depth of the second grooves is equal to, or deeper than, the depth of the first grooves. It is possible for the polishing pad to rapidly discharge any debris generated during the polishing process to reduce such defects as scratches on the surface of a wafer.