-
公开(公告)号：US20210122007A1
公开(公告)日：2021-04-29
申请号：US17077360
申请日：2020-10-22
Applicant: SKC CO., LTD.
Inventor： Jong Wook YUN , Jang Won SEO , Hyeyoung HEO , Eun Sun JOENG
Abstract: The composition according to an embodiment employs a mixture of curing agents, which comprises a first curing agent containing sulfur and a second curing agent containing an ester group, whereby it is possible to control the physical properties of the polishing pad as necessary.
-
2.发明申请
公开(公告)号：US20210094144A1
公开(公告)日：2021-04-01
申请号：US16584145
申请日：2019-09-26
Applicant: SKC Co., Ltd.
Inventor： Jaein AHN , Jang Won SEO , Jong Wook YUN , Sunghoon YUN , Hye Young HEO , Su Young MOON
Abstract: A polishing pad includes a polyurethane, wherein the polyurethane includes a fluorinated repeating unit represented by Formula 1, wherein the number of defects on a substrate after polishing with the polishing pad and a fumed silica slurry is 40 or less; wherein R11 and R12 are each independently selected from the group consisting of hydrogen, C1-C10 alkyl groups, and fluorine, with the proviso that at least one of R11 and R12 is fluorine, L is a C1-C5 alkylene group or —O—, R13 and R14 are each independently selected from the group consisting of hydrogen, C1-C10 alkyl groups, and fluorine, with the proviso that at least one of R13 and R14 is fluorine, and n and m are each independently an integer from 0 to 20, with the proviso that n and m are not simultaneously 0.
-
公开(公告)号：US20200207981A1
公开(公告)日：2020-07-02
申请号：US16726725
申请日：2019-12-24
Applicant: SKC CO., LTD.
Inventor： Eun Sun JOENG , Hye Young HEO , Jang Won SEO , Jong Wook YUN
Abstract: In the composition according to the embodiment, the composition of oligomers that constitute the chains in a urethane-based prepolymer may be adjusted to control the physical properties thereof such as gelation time. Thus, since the micropore characteristics, polishing rate, and pad cut rate of a polishing pad obtained by curing the composition according to the embodiment may be controlled, it is possible to efficiently manufacture high-quality semiconductor devices using the polishing pad.
-
4.发明申请
公开(公告)号：US20210154797A1
公开(公告)日：2021-05-27
申请号：US17101363
申请日：2020-11-23
Applicant: SKC CO., LTD.
Inventor： Hyeyoung HEO , Sunghoon YUN , Jang Won SEO , Jong Wook YUN , Jaein AHN
Abstract: Embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, a process for preparing the same, and a process for preparing a semiconductor device using the same. In the polishing pad according to the embodiments, the number average diameter (Da) and number median diameter (Dm) of a plurality of pores are adjusted to achieve a specific range of the Ed value (Equation 1). As a result, an excellent polishing rate and within-wafer non-uniformity can be achieved.
-
公开(公告)号：US20200306921A1
公开(公告)日：2020-10-01
申请号：US16790388
申请日：2020-02-13
Applicant: SKC CO., LTD.
Inventor： Sunghoon YUN , Hye Young HEO , Jong Wook YUN , Jang Won SEO , Jaein AHN
IPC: B24B37/22 , B24B7/22 , H01L21/321
Abstract: The present invention relates to a polishing pad that minimizes the occurrence of defects and a process for preparing the same, Since the polishing pad comprises fine hollow particles having shells, the glass transition temperature (Tg) of which is adjusted, the hardness of the shells and the shape of micropores on the surface of a polishing layer are controlled. Since the content of Si in the polishing layer is adjusted, it is possible to prevent the surface damage of a semiconductor substrate caused by hard additives. As a result, the polishing pad can provide a high polishing rate while minimizing the occurrence of defects such as scratches on the surface of a semiconductor substrate during the CMP process.
-
公开(公告)号：US20190389033A1
公开(公告)日：2019-12-26
申请号：US16395993
申请日：2019-04-26
Applicant: SKC CO., LTD.
Inventor： Sunghoon YUN , Jang Won SEO , Hye Young HEO , Jong Wook YUN , Jaein AHN , Su Young MOON
Abstract: Provided is a polishing pad that comprises a plurality of first grooves that have a shape of geometric figures that share a center; and a plurality of second grooves that radially extend from the center to the outer perimeter, wherein the depth of the second grooves is equal to, or deeper than, the depth of the first grooves. It is possible for the polishing pad to rapidly discharge any debris generated during the polishing process to reduce such defects as scratches on the surface of a wafer.
-
7.发明申请
公开(公告)号：US20210094143A1
公开(公告)日：2021-04-01
申请号：US16584081
申请日：2019-09-26
Applicant: SKC Co., Ltd.
Inventor： Jaein AHN , Jang Won SEO , Jong Wook YUN , Sunghoon YUN , Hye Young HEO , Su Young MOON
IPC: B24B37/24 , B24B37/22 , H01L21/306
Abstract: A polishing pad includes a polyurethane, wherein the polyurethane includes in its main chain a silane repeating unit represented by Formula 1, wherein the number of defects on a substrate after polishing with the polishing pad and a fumed silica slurry is about 40 or less wherein R11 and R12 are each independently hydrogen or C1-C10 alkyl groups, and n is an integer from 1 to 30.
-
公开(公告)号：US20200368873A1
公开(公告)日：2020-11-26
申请号：US16791881
申请日：2020-02-14
Applicant: SKC CO., LTD.
Inventor： Jong Wook YUN , Eun Sun JOENG , Hye Young HEO , Jang Won SEO
IPC: B24B37/24 , B24B7/22 , H01L21/306 , C08J9/12
Abstract: The present invention provides a polishing pad whose crosslinking density is adjusted to enhance the performance of the CMP process such as polishing rate and cut pad rate, in addition, in the process for preparing a polishing pad according to the embodiment, it is possible to implement such a crosslinking density by a simple method of controlling the preheating temperature of the mold for curing, Thus, the polishing pad may be applied to a process of preparing a semiconductor device, which comprises a CMP process, to provide a semiconductor device such as a wafer of excellent quality.
-
公开(公告)号：US20200207904A1
公开(公告)日：2020-07-02
申请号：US16721284
申请日：2019-12-19
Applicant: SKC CO., LTD.
Inventor： Eun Sun JOENG , Hye Young HEO , Jang Won SEO , Jong Wook YUN
Abstract: In the composition according to the embodiment, the content of an unreacted diisocyanate monomer in a urethane-based prepolymer may be controlled to control the physical properties thereof such as gelation time. Thus, since the micropore characteristics, polishing rate, and pad cut rate of a polishing pad obtained by curing the composition according to the embodiment may be controlled, it is possible to efficiently manufacture high-quality semiconductor devices using the polishing pad.
-
公开(公告)号：US20190111542A1
公开(公告)日：2019-04-18
申请号：US16160418
申请日：2018-10-15
Applicant: SKC CO., LTD.
Inventor： Sunghoon YUN , Jang Won SEO , Tae Kyoung KWON , Jaein AHN , Jong Wook YUN , Hye Young HEO
IPC: B24B37/20 , B24B53/017
Abstract: Embodiments relate to a leakage-proof polishing pad for use in a chemical mechanical planarization (CMP) process and a process for producing the same.
