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1.发明申请公开(公告)号：US20200328226A1
公开(公告)日：2020-10-15
申请号：US16680219
申请日：2019-11-11
Applicant: SK hynix Inc.
Inventor： In-Su PARK , Jong-Gi KIM , Hai-Won KIM , Hoe-Min JEONG
IPC: H01L27/11582 , H01L27/11556 , H01L23/535 , H01L23/532 , H01L21/768 , H01L21/285
Abstract: A vertical semiconductor device includes: a lower structure; a multi-layer stack structure including a source layer formed over the lower structure and gate electrodes formed over the source layer; a vertical structure penetrating the multi-layer stack structure and including a channel layer insulated from the source layer; a vertical source line spaced apart from the vertical structure to penetrate the multi-layer stack structure and contacting the source layer; and a horizontal source channel contact suitable for coupling the source layer and the channel layer and including a first conductive layer and a second conductive layer that include different dopants.
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2.发明公开
公开(公告)号：US20230403855A1
公开(公告)日：2023-12-14
申请号：US18446827
申请日：2023-08-09
Applicant: SK hynix Inc.
Inventor： In-Su PARK , Jong-Gi KIM , Hai-Won KIM , Hoe-Min JEONG
IPC: H10B43/27 , H01L23/535 , H01L23/532 , H01L21/285 , H01L21/768 , H10B41/27
CPC classification number: H10B43/27 , H01L23/535 , H01L23/53271 , H01L21/28525 , H01L21/76823 , H01L21/76834 , H01L21/76895 , H01L21/76805 , H10B41/27
Abstract: A vertical semiconductor device includes: a lower structure; a multi-layer stack structure including a source layer formed over the lower structure and gate electrodes formed over the source layer; a vertical structure penetrating the multi-layer stack structure and including a channel layer insulated from the source layer; a vertical source line spaced apart from the vertical structure to penetrate the multi-layer stack structure and contacting the source layer; and a horizontal source channel contact suitable for coupling the source layer and the channel layer and including a first conductive layer and a second conductive layer that include different dopants.
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3.发明申请
公开(公告)号：US20220123020A1
公开(公告)日：2022-04-21
申请号：US17567423
申请日：2022-01-03
Applicant: SK hynix Inc.
Inventor： In-Su PARK , Jong-Gi KIM , Hai-Won KIM , Hoe-Min JEONG
IPC: H01L27/11582 , H01L27/11556 , H01L23/535 , H01L23/532 , H01L21/285 , H01L21/768
Abstract: A vertical semiconductor device includes: a lower structure; a multi-layer stack structure including a source layer formed over the lower structure and gate electrodes formed over the source layer; a vertical structure penetrating the multi-layer stack structure and including a channel layer insulated from the source layer; a vertical source line spaced apart from the vertical structure to penetrate the multi-layer stack structure and contacting the source layer; and a horizontal source channel contact suitable for coupling the source layer and the channel layer and including a first conductive layer and a second conductive layer that include different dopants.
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公开(公告)号：US20160118442A1
公开(公告)日：2016-04-28
申请号：US14662198
申请日：2015-03-18
Applicant: SK hynix Inc.
Inventor： Jong-Gi KIM , Ki-Jeung LEE , Beom-Yong KIM
CPC classification number: H01L27/2427 , G06F12/0802 , G06F13/1663 , G06F13/1673 , G06F2212/40 , H01L27/2409 , H01L27/2436 , H01L45/06 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/141 , H01L45/146 , H01L45/147 , H01L45/16
Abstract: Provided is an electronic device including a switching element, wherein the switching element may include a first electrode, a second electrode, a switching layer interposed between the first and second electrodes, and a first amorphous semiconductor layer interposed between the first electrode and the switching layer.
Abstract translation: 提供一种包括开关元件的电子设备，其中开关元件可以包括第一电极，第二电极，插入在第一和第二电极之间的开关层，以及介于第一电极和开关层之间的第一非晶半导体层 。
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公开(公告)号：US20170186813A1
公开(公告)日：2017-06-29
申请号：US15182509
申请日：2016-06-14
Applicant: SK hynix Inc.
Inventor： Kyung-Wan KIM , Jong-Chul LEE , Jong-Gi KIM
CPC classification number: H01L27/2427 , G06F3/0619 , G06F3/0656 , G06F3/0659 , G06F3/0683 , G06F12/0802 , G06F2212/60 , H01L27/11507 , H01L27/1159 , H01L27/224 , H01L45/04 , H01L45/06 , H01L45/08 , H01L45/1233 , H01L45/141 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/165
Abstract: A threshold switching device may include: a first electrode layer; a second electrode layer; an insulating layer interposed between the first and second electrode layers and containing a plurality of neutral defects; and an additional insulating layer interposed between the insulating layer and one or each of the first and second electrode layers, and being substantially free from neutral defects, and wherein the threshold switching device has an ON or OFF state according to whether electrons are ejected from the plurality of neutral defects.
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公开(公告)号：US20170117325A1
公开(公告)日：2017-04-27
申请号：US15141072
申请日：2016-04-28
Applicant: SK hynix Inc.
Inventor： Jong-Gi KIM , Beom-Yong KIM , Kee-Jeung LEE
CPC classification number: H01L27/2409 , G06F3/0604 , G06F3/0659 , G06F3/0679 , H01L27/11507 , H01L27/1159 , H01L27/224 , H01L27/249 , H01L43/02 , H01L43/08 , H01L45/08 , H01L45/1226 , H01L45/1253 , H01L45/141 , H01L45/146 , H01L45/147 , H01L45/16
Abstract: An electronic device according to an implementation of the disclosed technology is an electronic device including a semiconductor memory, wherein the semiconductor memory includes: interlayer insulating layers and conductive first base layer patterns that are alternatively stacked over a substrate; a dielectric second base layer pattern that is in contact with sidewalls of the interlayer insulating layers; first electrodes that are in contact with sidewalls of the first base layer patterns; a second electrode disposed over outer sidewalls of the first electrodes; and a variable resistance layer pattern interposed between the first electrodes and the second electrode. Each of the first electrodes comprises an alloy that includes first and second elements. The first element is included in the first base layer patterns and the second element is included in the second base layer pattern.
