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公开(公告)号：US10860233B2
公开(公告)日：2020-12-08
申请号：US16382374
申请日：2019-04-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Noam Livne , Jun Jin Kong
Abstract: A memory system may include a memory device configured to store data received from a host; and a memory controller configured to, receive a received block of the data and a logical address associated with the data from the host, detect at least one halves of the received block as being duplicate halves based on whether a respective one of the at least one halves of the received block match one or more existing halves of stored blocks stored in the memory device, selectively store the at least one halves of the received block in the memory device based on whether the respective one of the at least one halves are duplicate halves such that the duplicate halves of the received block are not stored in the memory device, and store metadata associated with retrieving the received block.
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公开(公告)号：US10783970B2
公开(公告)日：2020-09-22
申请号：US16218210
申请日：2018-12-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Amit Berman , Ariel Doubchak , Noam Livne
Abstract: A method for performing a write operation in a random access memory (RAM) includes selecting a target block in a RAM with a greatest number of invalid pages, reading valid pages from target block, when a number of invalid pages is greater than a predetermined threshold, performing a bitline-wise block erase of the target block in said RAM, and copying-back valid data to the erased target block in a row-by-row set operation, wherein the erased target block is written with the valid data. Performing the bitline-wise block erase includes sequentially powering on each bitline with a predetermined reset voltage where all other bitlines and wordlines are grounded.
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公开(公告)号：US10922025B2
公开(公告)日：2021-02-16
申请号：US16514195
申请日：2019-07-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Amit Berman , Ariel Doubchak , Noam Livne
Abstract: A memory system including a nonvolatile memory (NVM) device and a controller is provided. The NVM device includes a main region and a spare region. The controller writes write data to a selected row of the main region, determines whether the written row is bad, and writes the write data to a spare address in the spare region and writes the spare address to the bad row, when the written row is determined to be bad.
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公开(公告)号：US10262728B2
公开(公告)日：2019-04-16
申请号：US15288443
申请日：2016-10-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Iddo Naiss , Noam Livne , Elona Erez , Jun Jin Kong
Abstract: A method for storing data multi-level cell (MLC) memory includes receiving data to be stored. The received data is divided into units of x bits, where x is an integer greater than or equal to 3. Each of the units of x bits is stored over a span of y memory cells of the MLC memory. Here, y is an integer greater than or equal to 2. At least one bit of each of the x bits is stored only partially in a first memory cell of the span of y memory cells and the at least one bit is also stored, only partially, in a second memory cell of the span of y memory cells such that the at least one bit cannot be interpreted without reading both the first and second memory cell of the span of y memory cells.
