公开(公告)号：US10199566B2

公开(公告)日：2019-02-05

申请号：US15220719

申请日：2016-07-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Ik Oh ,  Jong-Kyu Kim ,  Jongchul Park ,  Gwang-Hyun Baek ,  Kyungrae Byun ,  Hyun-Woo Yang

IPC: H01L29/82 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A semiconductor device includes a magnetic tunnel junction structure on a lower electrode, an intermediate electrode on the magnetic tunnel junction structure, and an upper electrode on the intermediate electrode, wherein the intermediate electrode includes a lower portion and an upper portion having a side surface profile different from that of the lower portion.