公开(公告)号：US20160035754A1

公开(公告)日：2016-02-04

申请号：US14585525

申请日：2014-12-30

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： Dongjo KIM ,  Myounggeun CHA ,  Yoonho KHANG ,  Soyoung KOO

IPC分类号： H01L27/12 ,  H01L21/02 ,  H01L27/32 ,  H01L29/786

CPC分类号： H01L27/1218 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02686 ,  H01L27/1222 ,  H01L29/66757 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78654 ,  H01L29/78675

摘要： Provided is a semiconductor device including a buffer layer that is on a substrate and includes an inclined surface; a crystalline silicon layer that is on the buffer layer; a gate electrode that is on the crystalline silicon layer while being insulated from the crystalline silicon layer; and a source electrode and a drain electrode that are each electrically connected to the crystalline silicon layer, the angle between the substrate and the inclined surface being in a range of about 17.5 degrees to less than about 70 degrees.

摘要翻译： 本发明提供一种半导体器件，其包括在衬底上并包括倾斜表面的缓冲层; 位于缓冲层上的晶体硅层; 位于结晶硅层上同时与晶体硅层绝缘的栅电极; 以及源极电极和漏极电极，其电连接到晶体硅层，基板和倾斜表面之间的角度在约17.5度至小于约70度的范围内。

公开(公告)号：US20210202652A1

公开(公告)日：2021-07-01

申请号：US16991314

申请日：2020-08-12

申请人： Samsung Display Co., Ltd.

发明人： Dongjo KIM ,  Danbi CHOI ,  Soukjune HWANG

IPC分类号： H01L27/32

摘要： A display device includes: a first substrate having a display area and a non-display area on one side of the display area; a second substrate arranged opposite the first substrate; a display element arranged on the display area, the display element including a pixel electrode, an intermediate layer arranged on the pixel electrode, and an opposite electrode arranged on the intermediate layer; a power supply line arranged on the non-display area; and a conductive layer arranged on the power supply line and including the same material as the pixel electrode.

公开(公告)号：US20160093646A1

公开(公告)日：2016-03-31

申请号：US14689927

申请日：2015-04-17

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： Myounggeun CHA ,  Dongjo KIM ,  Yoonho KHANG ,  Myounghwa KIM ,  Kyoungwon LEE

IPC分类号： H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L27/1255 ,  H01L27/1274 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78675 ,  H01L29/78678

摘要： A thin film transistor (TFT) substrate, a flat display apparatus including the TFT substrate, a method of manufacturing the TFT substrate, and a method of manufacturing the flat display apparatus, the thin film transistor (TFT) substrate including a substrate; a first gate electrode on the substrate, the first gate electrode including a first branch electrode and a second branch electrode that are spaced apart from one another; a polysilicon layer on the first gate electrode and insulated from the first gate electrode; and a second gate electrode on the polysilicon layer, the second gate electrode being insulated from the polysilicon layer and overlying the first and second branch electrodes.

摘要翻译： 薄膜晶体管（TFT）基板，包括TFT基板的平面显示装置，TFT基板的制造方法以及制造平面显示装置的方法，所述薄膜晶体管（TFT）基板包括基板; 在所述基板上的第一栅电极，所述第一栅极包括彼此间隔开的第一分支电极和第二分支电极; 在所述第一栅电极上并与所述第一栅电极绝缘的多晶硅层; 以及在所述多晶硅层上的第二栅电极，所述第二栅电极与所述多晶硅层绝缘并且覆盖所述第一和第二分支电极。

公开(公告)号：US20140001469A1

公开(公告)日：2014-01-02

申请号：US13931697

申请日：2013-06-28

申请人： Samsung Display Co., Ltd. ,  SAMSUNG CORNING PRECISION MATERIALS CO., LTD.

发明人： Jaewoo PARK ,  Yoon Gyu LEE ,  Do-Hyun KIM ,  Dongjo KIM ,  Juok PARK ,  Insung SOHN ,  Sangwon YOON ,  Gunhyo LEE ,  Yongjin LEE ,  Woo-Seok JEON

IPC分类号： H01L29/786 ,  C23C14/34

CPC分类号： H01L29/78693 ,  C23C14/0036 ,  C23C14/086 ,  C23C14/3407 ,  C23C14/3414

摘要： A thin-film transistor includes a metal electrode and a zinc oxide-based barrier film that blocks a material from diffusing out of the metal electrode. The zinc oxide-based barrier film is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based barrier film. A zinc oxide-based sputtering target for deposition of a barrier film of a thin-film transistor is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based sputtering target.

摘要翻译： 薄膜晶体管包括阻挡材料扩散出金属电极的金属电极和氧化锌基阻挡膜。 基于氧化锌的阻挡膜由掺杂有氧化铟的氧化锌制成，氧化铟的含量为氧化锌系阻挡膜的1〜50重量％。 用于沉积薄膜晶体管的阻挡膜的氧化锌基溅射靶由掺杂有氧化铟的氧化锌制成，氧化铟的含量为氧化锌基的1〜50重量％ 溅射靶。