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公开(公告)号：US20220293561A1
公开(公告)日：2022-09-15
申请号：US17199458
申请日：2021-03-12
Applicant: NANYA TECHNOLOGY CORPORATION
Inventor： Yi-Jen Lo , Hsih Yang Chiu , Ching Hung Chang , Chiang-Lin Shih
IPC: H01L25/065 , H01L25/00 , H01L23/00
Abstract: The disclosure provides a method of manufacturing a semiconductor device including bonding a second device wafer to a first device wafer, such that a first bonding interface including a fusion-bonding interface is formed between the first device wafer and the second device wafer, wherein the first device wafer and the second device wafer are the same kind of device wafer. A semiconductor device is also provided.
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公开(公告)号：US20220293552A1
公开(公告)日：2022-09-15
申请号：US17198252
申请日：2021-03-11
Applicant: NANYA TECHNOLOGY CORPORATION
Inventor： Yi-Jen Lo , Hsih Yang Chiu , Ching Hung Chang , Chiang-Lin Shih
IPC: H01L23/00 , H01L25/065 , H01L25/00
Abstract: The disclosure provides a method of manufacturing a semiconductor device including bonding a second device wafer to a first device wafer, such that a first bonding interface including a dielectric-to-dielectric bonding interface and a metal-to-metal bonding interface is formed between the first device wafer and the second device wafer, wherein the second device wafer is electrically coupled to the first device wafer, and a function of the first device wafer and the second device wafer are the same kind of device wafer. A semiconductor device is also provided.
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公开(公告)号：US20240055390A1
公开(公告)日：2024-02-15
申请号：US18491813
申请日：2023-10-23
Applicant: NANYA TECHNOLOGY CORPORATION
Inventor： Yi-Jen Lo , Hsih Yang Chiu , Ching Hung Chang , Chiang-Lin Shih
IPC: H01L23/00 , H01L25/00 , H01L25/065
CPC classification number: H01L24/80 , H01L25/50 , H01L25/0657 , H01L24/08 , H01L2924/1436 , H01L2224/80894 , H01L2224/08146 , H01L2225/06541 , H01L2224/8038
Abstract: The disclosure provides a method of manufacturing a semiconductor device including bonding a second device wafer to a first device wafer, such that a first bonding interface including a dielectric-to-dielectric bonding interface and a metal-to-metal bonding interface is formed between the first device wafer and the second device wafer, wherein the second device wafer is electrically coupled to the first device wafer, and a function of the first device wafer and the second device wafer are the same kind of device wafer. A semiconductor device is also provided.
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公开(公告)号：US11842979B2
公开(公告)日：2023-12-12
申请号：US17198252
申请日：2021-03-11
Applicant: NANYA TECHNOLOGY CORPORATION
Inventor： Yi-Jen Lo , Hsih Yang Chiu , Ching Hung Chang , Chiang-Lin Shih
IPC: H01L25/065 , H01L23/00 , H01L25/00
CPC classification number: H01L24/80 , H01L24/08 , H01L25/0657 , H01L25/50 , H01L2224/08146 , H01L2224/8038 , H01L2224/80894 , H01L2225/06541 , H01L2924/1436
Abstract: The disclosure provides a method of manufacturing a semiconductor device including bonding a second device wafer to a first device wafer, such that a first bonding interface including a dielectric-to-dielectric bonding interface and a metal-to-metal bonding interface is formed between the first device wafer and the second device wafer, wherein the second device wafer is electrically coupled to the first device wafer, and a function of the first device wafer and the second device wafer are the same kind of device wafer. A semiconductor device is also provided.
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公开(公告)号：US12278211B2
公开(公告)日：2025-04-15
申请号：US18491813
申请日：2023-10-23
Applicant: NANYA TECHNOLOGY CORPORATION
Inventor： Yi-Jen Lo , Hsih Yang Chiu , Ching Hung Chang , Chiang-Lin Shih
IPC: H01L25/065 , H01L23/00 , H01L25/00
Abstract: The disclosure provides a method of manufacturing a semiconductor device including bonding a second device wafer to a first device wafer, such that a first bonding interface including a dielectric-to-dielectric bonding interface and a metal-to-metal bonding interface is formed between the first device wafer and the second device wafer, wherein the second device wafer is electrically coupled to the first device wafer, and a function of the first device wafer and the second device wafer are the same kind of device wafer. A semiconductor device is also provided.
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公开(公告)号：US11876077B2
公开(公告)日：2024-01-16
申请号：US17199458
申请日：2021-03-12
Applicant: NANYA TECHNOLOGY CORPORATION
Inventor： Yi-Jen Lo , Hsih Yang Chiu , Ching Hung Chang , Chiang-Lin Shih
IPC: H01L25/065 , H01L25/00 , H01L23/00
CPC classification number: H01L25/0657 , H01L24/08 , H01L24/89 , H01L25/50 , H01L2224/08146 , H01L2224/80895 , H01L2225/06541
Abstract: The disclosure provides a method of manufacturing a semiconductor device including bonding a second device wafer to a first device wafer, such that a first bonding interface including a fusion-bonding interface is formed between the first device wafer and the second device wafer, wherein the first device wafer and the second device wafer are the same kind of device wafer. A semiconductor device is also provided.
