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公开(公告)号：US20230010658A1
公开(公告)日：2023-01-12
申请号：US17770311
申请日：2020-10-20
Applicant: Merck Patent GmbH
Inventor： Peer KIRSCH , Sebastian RESCH , Henning SEIM , Itai LIEBERMAN , Shintaro ARAI , Marc TORNOW , Takuya KAMIYAMA , Julian DLUGOSCH , Mansour MOINPOUR
Abstract: The present invention relates to an electronic switching device comprising an organic molecular layer in contact with a metal nitride electrode for use in memory, sensors, field-effect transistors or Josephson junctions. More particularly, the invention is included in the field of random access non-volatile memristive memories (RRAM). The invention thus further relates to an electronic component comprising a crossbar array comprising a multitude of said electronic switching devices.
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公开(公告)号：US20190312216A1
公开(公告)日：2019-10-10
申请号：US16315827
申请日：2017-07-04
Applicant: MERCK PATENT GMBH
Inventor： Peer KIRSCH , Andreas RUHL , Marc TORNOW , Achyut BORA
Abstract: An electronic switching element (1) which comprises, in this sequence, a first electrode (16), a molecular layer (18) bonded to a substrate, and a second electrode (20), where the molecular layer essentially consists of compounds of the formula I indicated in claim 1, in which a mesogenic radical is bonded to the substrate via a spacer group (Sp) by means of an anchor group (G), is suitable for the production of components (1) as memristive device for digital information storage.
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公开(公告)号：US20240381674A1
公开(公告)日：2024-11-14
申请号：US18568650
申请日：2022-06-07
Applicant: MERCK PATENT GMBH
Inventor： Peer KIRSCH , Sebastian RESCH , Henning SEIM , Marc TORNOW
Abstract: An electronic element (10) comprising a plurality of cells (100) arranged in a three dimensional array of cells (100) is provided, wherein the cells (100) are located at crossings between two crossed electrode lines (30, 31). Each cell (100) of the electronic component (100) comprises in this order a first electrode (102), a part (104) of a molecular layer (20) and a second electrode (106), wherein the molecular layer (20) is a self-assembled monolayer of organic molecules having an anchoring group connected to a dipolar unit by means of a conformationally flexible unit.
Further aspects of the invention relate to a method and a compound for producing such an electronic element (10) and the use of such an electronic element (10).
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公开(公告)号：US20180006253A1
公开(公告)日：2018-01-04
申请号：US15541973
申请日：2015-12-08
Applicant: MERCK PATENT GMBH
Inventor： Peer KIRSCH , Qiong TONG , Andreas RUHL , Marc TORNOW , Achyut BORA
CPC classification number: H01L51/0591 , G11C13/0016 , G11C13/0069 , G11C2013/009 , G11C2213/35 , G11C2213/52 , G11C2213/73 , H01L27/285 , H01L51/005 , H01L51/0051 , H01L51/0067 , H01L51/102
Abstract: An electronic component (10) comprising a plurality of switching elements (1) which comprise, in this sequence, a first electrode (16), a molecular layer (18) bonded to a substrate, and a second electrode (20), where the molecular layer essentially consists of molecules (M) which contain a connecting group (V) and an end group (E) having a polar or ionic function, is suitable as memristive device for digital information storage.
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5.发明申请
公开(公告)号：US20220383924A1
公开(公告)日：2022-12-01
申请号：US17771200
申请日：2020-10-20
Applicant: MERCK PATENT GMBH
Inventor： Peer KIRSCH , Sebastian RESCH , Henning SEIM , Itai LIEBERMAN , Marc TORNOW , Julian DLUGOSCH , Takuya KAMIYAMA
Abstract: A two-bit memory device having a layer structure containing in order a bottom layer, a molecular layer containing a chiral compound having at least one polar functional group, and a top layer, which is electrically conductive and ferromagnetic. The chiral compound acts as a spin filter for electrons passing through the molecular layer. The chiral compound is of flexible conformation and has a conformation-flexible molecular dipole moment. An electrical resistance of the layer structure for an electrical current running from the bottom layer to the top layer has at least four distinct states which depend on the magnetization of the top layer and on the orientation of the conformation-flexible dipole moment of the chiral compound. Furthermore, a method for operating the two-bit memory device and an electronic component containing at least one two-bit memory device.
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公开(公告)号：US20210292651A1
公开(公告)日：2021-09-23
申请号：US17340459
申请日：2021-06-07
Applicant: MERCK PATENT GMBH
Inventor： Peer KIRSCH , Andreas RUHL , Marc TORNOW , Achyut BORA
Abstract: An electronic switching element is described having, in sequence, a first electrode, a molecular layer bonded to a substrate, and a second electrode. The molecular layer contains compounds of formula I, R1-(A1-Z1)r—B1—(Z2-A2)s-Sp-G, wherein A1, A2, B1, Z1, Z2, Sp, G, r, and s are as defined herein, in which a mesogenic radical is bonded to the substrate via a spacer group, Sp, by means of an anchor group, G. The switching element is suitable for production of components that can operate as a memristive device for digital information storage.
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公开(公告)号：US20210257569A1
公开(公告)日：2021-08-19
申请号：US17251669
申请日：2019-06-11
Applicant: MERCK PATENT GMBH
Inventor： Peer KIRSCH , Sebastian RESCH , Henning SEIM , Marc TORNOW , Takuya KAMIYAMA , Gerd-Volker ROESCHENTHALER , Romana PAJKERT
Abstract: The invention relates to a process for the production of an electronic component comprising a self-assembled monolayer (SAM) using compounds of the formula I R1-(A1-Z1)r—(B1)n—(Z2-A2)s-Sp-G (I) in which the groups occurring have the meanings defined in claim 1; the present invention furthermore relates to the use of the components in electronic switching elements and to compounds for the production of the SAM.
