公开(公告)号：US09515258B2

公开(公告)日：2016-12-06

申请号：US14729181

申请日：2015-06-03

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Yu-Yu Lin ,  Feng-Min Lee ,  Chien-Hung Lu ,  Chin-Yi Tseng

IPC: H01L45/00

CPC classification number: H01L45/1253 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1633 ,  H01L45/1683

Abstract: A memory structure including an insulating layer, a first electrode layer and a first barrier is provided. The insulating layer has a recess. The first electrode layer is formed in the recess and has a first top surface. The first barrier is formed between the insulating layer and the first electrode layer, and has a second top surface lower than the first top surface. The first top surface and the second top surface are lower than an opening of the recess.

Abstract translation: 提供了包括绝缘层，第一电极层和第一屏障的存储结构。 绝缘层具有凹部。 第一电极层形成在凹部中并且具有第一顶表面。 第一阻挡层形成在绝缘层和第一电极层之间，并且具有比第一顶表面低的第二顶表面。 第一顶表面和第二顶表面比凹口的开口低。

公开(公告)号：US20160218284A1

公开(公告)日：2016-07-28

申请号：US14729181

申请日：2015-06-03

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Yu-Yu Lin ,  Feng-Min Lee ,  Chien-Hung Lu ,  Chin-Yi Tseng

IPC: H01L45/00

CPC classification number: H01L45/1253 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1633 ,  H01L45/1683

Abstract: A memory structure including an insulating layer, a first electrode layer and a first barrier is provided. The insulating layer has a recess. The first electrode layer is formed in the recess and has a first top surface. The first barrier is formed between the insulating layer and the first electrode layer, and has a second top surface lower than the first top surface. The first top surface and the second top surface are lower than an opening of the recess.

Abstract translation: 提供了包括绝缘层，第一电极层和第一屏障的存储结构。 绝缘层具有凹部。 第一电极层形成在凹部中并且具有第一顶表面。 第一阻挡层形成在绝缘层和第一电极层之间，并且具有比第一顶表面低的第二顶表面。 第一顶表面和第二顶表面比凹口的开口低。