CHANNEL MODULATION FOR A MEMORY DEVICE
    4.
    发明公开

    公开(公告)号:US20240126644A1

    公开(公告)日:2024-04-18

    申请号:US18397450

    申请日:2023-12-27

    CPC classification number: G06F11/1004 G06F11/16 G06F12/02

    Abstract: Methods, systems, and devices for channel modulation for a memory device are described. A system may include a memory device and a host device coupled with the memory device. The system may be configured to communicate a first signal modulated using a first modulation scheme and communicate a second signal that is based on the first signal and that is modulated using a second modulation scheme. The first modulation scheme may include a first quantity of voltage levels that span a first range of voltages, and the second modulation scheme may include a second quantity of voltage levels that span a second range of voltages different than (e.g., smaller than) the first range of voltages. The first signal may include write data carried over a data channel, and the second signal may include error detection information based on the write data that is carried over an error detection channel.

    TIME-VARIABLE DECISION FEEDBACK EQUALIZATION

    公开(公告)号:US20240022457A1

    公开(公告)日:2024-01-18

    申请号:US18373122

    申请日:2023-09-26

    CPC classification number: H04L25/03057

    Abstract: Methods, systems, and devices for techniques for time-variable decision feedback equalization are described. A memory device may be coupled with a host device using one or more conductive lines. A receiver may receive a signal transmitted from another device over a conductive line. The receiver may include a decision circuit used to determine voltages of the received signal based on the received signal and a feedback signal and output an output signal. The receiver may include a variable time-delay circuit configured to output delayed signals that are delayed versions of the output signal and a gain circuit that is configured to scale the delayed signals to generate the feedback signal. The variable time-delay circuit may include delay elements having variable delay parameters. The receiver may be coupled with a memory array that stores the information conveyed by the output signal.

    Channel modulation for a memory device

    公开(公告)号:US11860731B2

    公开(公告)日:2024-01-02

    申请号:US17857700

    申请日:2022-07-05

    CPC classification number: G06F11/1004 G06F11/16 G06F12/02

    Abstract: Methods, systems, and devices for channel modulation for a memory device are described. A system may include a memory device and a host device coupled with the memory device. The system may be configured to communicate a first signal modulated using a first modulation scheme and communicate a second signal that is based on the first signal and that is modulated using a second modulation scheme. The first modulation scheme may include a first quantity of voltage levels that span a first range of voltages, and the second modulation scheme may include a second quantity of voltage levels that span a second range of voltages different than (e.g., smaller than) the first range of voltages. The first signal may include write data carried over a data channel, and the second signal may include error detection information based on the write data that is carried over an error detection channel.

    VARIABLE MODULATION SCHEME FOR MEMORY DEVICE ACCESS OR OPERATION

    公开(公告)号:US20240303194A1

    公开(公告)日:2024-09-12

    申请号:US18626212

    申请日:2024-04-03

    CPC classification number: G06F12/0806 H04L5/0007 H04L27/14

    Abstract: Methods, systems, and devices that support variable modulation schemes for memory are described. A device may switch between different modulation schemes for communication based on one or more operating parameters associated with the device or a component of the device. The modulation schemes may involve amplitude modulation in which different levels of a signal represent different data values. For instance, the device may use a first modulation scheme that represents data using two levels and a second modulation scheme that represents data using four levels. In one example, the device may switch from the first modulation scheme to the second modulation scheme when bandwidth demand is high, and the device may switch from the second modulation scheme to the first modulation scheme when power conservation is in demand. The device may also, based on the operating parameter, change the frequency of the signal pulses communicated using the modulation schemes.

    Variable modulation scheme for memory device access or operation

    公开(公告)号:US11971820B2

    公开(公告)日:2024-04-30

    申请号:US17863987

    申请日:2022-07-13

    CPC classification number: G06F12/0806 H04L5/0007 H04L27/14

    Abstract: Methods, systems, and devices that support variable modulation schemes for memory are described. A device may switch between different modulation schemes for communication based on one or more operating parameters associated with the device or a component of the device. The modulation schemes may involve amplitude modulation in which different levels of a signal represent different data values. For instance, the device may use a first modulation scheme that represents data using two levels and a second modulation scheme that represents data using four levels. In one example, the device may switch from the first modulation scheme to the second modulation scheme when bandwidth demand is high, and the device may switch from the second modulation scheme to the first modulation scheme when power conservation is in demand. The device may also, based on the operating parameter, change the frequency of the signal pulses communicated using the modulation schemes.

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