公开(公告)号：US20230420423A1

公开(公告)日：2023-12-28

申请号：US18247789

申请日：2020-10-06

Applicant: LG ELECTRONICS INC.

Inventor： Soohyun KIM ,  Junoh SHIN ,  Youngdo KIM ,  Wonseok CHOI ,  Dohan KIM

IPC: H01L25/075 ,  H01L33/62

CPC classification number: H01L25/0753 ,  H01L2933/0066 ,  H01L33/62

Abstract: A display device according to embodiments of the present invention comprises: a substrate; a plurality of first metal wiring layers formed on the substrate; a first insulating layer stacked on the substrate to cover the first metal wiring; a second metal wiring layer stacked on at least a portion of the first insulating layer so as to be spaced apart therefrom; and a second insulating layer stacked on the second metal wiring. The second metal wiring layer comprises: at least one first metal layer having a first conductivity; and at least one second metal layer having a higher conductivity than the first metal layer, wherein the first metal layer may block diffusion of the second metal layer.

公开(公告)号：US20230045160A1

公开(公告)日：2023-02-09

申请号：US17778691

申请日：2019-11-26

Applicant: LG ELECTRONICS INC.

Inventor： Soohyun KIM ,  Dohan KIM ,  Wonseok CHOI ,  Youngdo KIM

IPC: H01L33/00 ,  H01L25/075 ,  G01R27/02 ,  G01R1/073

Abstract: Discussed is a method of manufacturing a display device, the method including: introducing semiconductor light emitting devices including a magnetic material into a fluid chamber; transferring a substrate to the fluid chamber, the substrate including assembly electrodes, an insulating layer covering the assembly electrodes, and open holes in the insulating layer and exposing portions of both ends of the assembly electrodes; applying a magnetic force to the semiconductor light emitting devices introduced into the fluid chamber to move the semiconductor light emitting devices in one direction; and forming an electric field so that the moving semiconductor light emitting devices are disposed at preset positions of the substrate, wherein a probe pin is in contact with the assembly electrodes exposed through the open holes to individually apply a voltage to the assembly electrodes to form the electric field.

公开(公告)号：US20240387492A1

公开(公告)日：2024-11-21

申请号：US18692576

申请日：2021-09-17

Applicant: LG ELECTRONICS INC.

Inventor： Dohan KIM ,  Wonseok CHOI ,  Wonjae CHANG ,  Jinsung KIM

IPC: H01L25/16 ,  G09G3/32 ,  H01L23/00 ,  H01L33/62

Abstract: The display device can include a substrate; a barrier rib disposed on the substrate and having an assembly hole; a semiconductor light emitting device in the assembly hole; and an adhesive part between the substrate and the semiconductor light emitting device within the assembly hole. The adhesive part can include adhesive particles in contact with each other.

公开(公告)号：US20220352446A1

公开(公告)日：2022-11-03

申请号：US17638444

申请日：2019-08-30

Applicant: LG ELECTRONICS INC.

Inventor： Indo CHUNG ,  Jeonghyo KWON ,  Dohan KIM

IPC: H01L33/62 ,  H01L33/00 ,  H01L33/38 ,  H01L27/15

Abstract: The present specification provides a new type of a display device in which a wiring process is easily performed after a semiconductor light emitting element having a vertical structure is assembled on a substrate. Here, a semiconductor light emitting device according to an embodiment of the present invention is characterized by comprising: a substrate; a wiring electrode positioned on the substrate; a dielectric film positioned on the wiring electrode; an assembly electrode positioned on the dielectric film; an assembly insulating film positioned on the assembly electrode; a partition wall positioned on the assembly insulting film and defining an assembly groove to which a semiconductor light emitting element is assembled; and the semiconductor light emitting element which is assembled to the assembly groove and provided with conductive electrodes on both ends thereof, wherein the wiring electrode is provided with a protrusion portion, and the protrusion portion protrudes toward the assembly groove and is electrically connected to the conductive electrode on one end of the semiconductor light emitting element.

公开(公告)号：US20230064316A1

公开(公告)日：2023-03-02

申请号：US17793209

申请日：2020-01-21

Applicant: LG ELECTRONICS INC.

Inventor： Sungyun PARK ,  Dohan KIM ,  Soohyun KIM ,  Sungmin PARK

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/42 ,  H01L33/60

Abstract: A display device of the present invention relates to a structure for bottom emission, comprising: a base part; assembly electrodes which extend in one direction and which are formed on the base part; a dielectric layer formed to cover the assembly electrodes; a barrier rib part which has a plurality of cells, and which is stacked on the dielectric layer; and semiconductor light-emitting elements loaded in the cell, wherein the assembly electrodes include a metal electrode part formed of a metal material and a transparent electrode part formed of a transparent material.

公开(公告)号：US20220375915A1

公开(公告)日：2022-11-24

申请号：US17770855

申请日：2019-10-22

Applicant: LG ELECTRONICS INC.

Inventor： Dohan KIM ,  Jeonghyo KWON ,  Soohyun KIM ,  Indo CHUNG

IPC: H01L25/16 ,  H01L27/12 ,  H01L23/00

Abstract: The present disclosure provides a novel form of a display device which enables semiconductor light emitting elements having a vertical structure to be assembled onto a substrate and then wiring process to be performed stably without any change to the position of the elements during post-processing. The display device according to one embodiment of the present disclosure comprises: a substrate; a pair of assembly electrodes positioned on the substrate; a dielectric layer positioned on the assembly electrodes; a wiring electrode positioned on the dielectric layer and comprising a base electrode part and a low melting point junction; a partition wall which overlaps with a portion of the wiring electrode, is positioned on the dielectric layer, and defines an assembly groove to which a semiconductor light emitting element is assembled; and the vertical semiconductor light emitting element which is assembled in the assembly groove and is electrically connected to the low melting point junction of the wiring electrode, wherein the low melting point junction has a flow stop angle for controlling the thermal flow characteristic of the junction.