知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

30 records (took 0.014 seconds)

    METHODS AND APPARATUS FOR USE WITH EXTREME ULTRAVIOLET LIGHT HAVING CONTAMINATION PROTECTION
    4.
    发明申请
    METHODS AND APPARATUS FOR USE WITH EXTREME ULTRAVIOLET LIGHT HAVING CONTAMINATION PROTECTION 有权
    使用极光紫外线灯具有污染防护的方法和装置

    公开(公告)号：US20140231659A1

    公开(公告)日：2014-08-21

    申请号：US14176587

    申请日：2014-02-10

    Applicant: KLA-Tencor Corporation

    Inventor： Frank Chilese ,  John R. Torczynski ,  Rudy Garcia ,  Leonard E. Klebanoff ,  Gildardo R. Delgado ,  Daniel J. Rader ,  Anthony S. Geller ,  Michail A. Gallis

    IPC: G01N21/01 ,  G01N21/59

    CPC classification number: G01N21/59 ,  G03F7/70933 ,  G03F7/70983

    Abstract: An apparatus for use with extreme ultraviolet (EUV) light comprising A) a duct having a first end opening, a second end opening and an intermediate opening intermediate the first end opening the second end opening, B) an optical component disposed to receive EUV light from the second end opening or to send light through the second end opening, and C) a source of low pressure gas at a first pressure to flow through the duct, the gas having a high transmission of EUV light, fluidly coupled to the intermediate opening. In addition to or rather than gas flow the apparatus may have A) a low pressure gas with a heat control unit thermally coupled. to at least one of the duct and the optical component and/or B) a voltage device to generate voltage between a first portion and a second portion of the duet with a grounded insulative portion therebetween.

    Abstract translation: 一种用于极紫外（EUV）光的装置，包括：A）具有第一端开口，第二端开口和中间开口的管道，所述第一端开口位于第二端开口的中间，B）设置成接收EUV光的光学部件 从第二端开口或通过第二端开口发射光，以及C）处于第一压力的低压气体源流过管道，该气体具有高透光率的EUV光，其流体耦合到中间开口 。 除了或不是气流，装置可具有A）具有热耦合的热控制单元的低压气体。 到所述管道和所述光学部件中的至少一个和/或B）在所述二重体的第一部分和第二部分之间产生电压的电压装置，其间具有接地绝缘部分。

    High purity ozone generator for optics cleaning and recovery
    7.
    发明授权
    High purity ozone generator for optics cleaning and recovery 有权
    用于光学清洁和回收的高纯度臭氧发生器

    公开(公告)号：US09573111B1

    公开(公告)日：2017-02-21

    申请号：US13935765

    申请日：2013-07-05

    Applicant: KLA-Tencor Corporation

    Inventor： Garry A. Rose ,  Gildardo R. Delgado ,  H. Steven Larson

    IPC: B01J19/12

    CPC classification number: B01J19/123 ,  C01B13/10 ,  C01B2201/64 ,  C01B2201/82

    Abstract: An apparatus for producing a high purity stream of ozone including a reaction chamber having an inlet and an outlet, a gaseous feed stream having a first purified component and an ultraviolet source. The gaseous feed stream enters the reaction chamber through the inlet, the first purified component includes oxygen, the ultraviolet source forms ozone from the oxygen, and the ozone exits the reaction chamber through the outlet.

    Abstract translation: 一种用于生产高纯度臭氧流的装置，包括具有入口和出口的反应室，具有第一纯化组分和紫外源的气态进料流。 气态进料流通过入口进入反应室，第一纯化组分包括氧气，紫外线源自氧气形成臭氧，臭氧通过出口离开反应室。

    Boron-Based Capping Layers for EUV Optics
    8.
    发明申请
    Boron-Based Capping Layers for EUV Optics 审中-公开

    公开(公告)号：US20200217804A1

    公开(公告)日：2020-07-09

    申请号：US16413740

    申请日：2019-05-16

    Applicant: KLA-TENCOR CORPORATION

    Inventor： Gildardo R. Delgado ,  Shannon B. Hill ,  Zefram Marks

    IPC: G01N21/95 ,  G03F7/16 ,  H01L31/0216 ,  H01L27/146

    Abstract: Disclosed herein are optical elements and methods for making the same. Such optical elements may comprise a first layer disposed on a substrate, a second layer disposed on the first layer, a terminal layer disposed on the second layer, and a cap layer disposed on the terminal layer. The cap layer may comprise boron, boron nitride, or boron carbide. Such optical elements may be made using a method comprising depositing a first layer using vapor deposition such that the first layer is disposed on a substrate, depositing a second layer using vapor deposition such that the second layer is disposed on the first layer, depositing a terminal layer using vapor deposition such that the terminal layer is disposed on the second layer, and depositing a cap layer comprising boron, boron nitride, or boron carbide using vapor deposition such that the cap layer is disposed on the terminal layer.

Patent Agency Ranking