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公开(公告)号：US12159040B2
公开(公告)日：2024-12-03
申请号：US17899974
申请日：2022-08-31
Applicant: KIOXIA CORPORATION
Inventor： Rieko Funatsuki , Takashi Maeda , Sumiko Domae , Kazutaka Ikegami
IPC: G06F3/06
Abstract: A semiconductor memory device includes a semiconductor pillar including first and second memory cells electrically connected in series and formed on opposite sides of the semiconductor pillar, first word lines connected to the first memory cells, respectively, and second word lines connected to the second memory cells, respectively. A verify operation includes a channel clean operation for supplying a reference voltage to a semiconductor channel shared by the first and second memory cells followed by at least first and second sense operation for determining whether a threshold voltage of a target memory cell has reached first and second threshold voltage states, respectively, then a second channel clean operation for supplying the reference voltage to the semiconductor channel, and then at least a third sense operation for determining whether the threshold voltage of the target memory cell has reached a third threshold voltage state.
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公开(公告)号：US11373703B2
公开(公告)日：2022-06-28
申请号：US17183803
申请日：2021-02-24
Applicant: KIOXIA CORPORATION
Inventor： Sumiko Domae , Daisaburo Takashima
Abstract: During a writing operation to change a resistance of a part of a variable resistance material film facing a first word line, the semiconductor storage device applies a first voltage to the first word line, applies a second voltage to a second word line, and applies a third voltage to a third word line. The first, second, and third word lines are stacked above a substrate. The second word line is adjacent to the first word line in the stacking direction. The third word line is not adjacent to the first word line in the stacking direction.
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公开(公告)号：US11201171B2
公开(公告)日：2021-12-14
申请号：US17008236
申请日：2020-08-31
Applicant: KIOXIA CORPORATION
Inventor： Sumiko Domae , Daisaburo Takashima
IPC: G11C7/06 , H01L27/11597 , H01L27/11592 , H01L27/11509 , H01L29/78 , H01L29/66 , G11C7/18 , H01L27/11514
Abstract: A semiconductor storage device includes a stacked body and a columnar body. The stacked body includes a plurality of conductive layers spaced apart from each other in a stacking direction. The columnar body penetrates the stacked body in the stacking direction. The columnar body includes a columnar ferroelectric film, a semiconductor film disposed between the ferroelectric film and the conductive layers, and an insulating film disposed between the semiconductor film and the conductive layers.
