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公开(公告)号:US11295821B2
公开(公告)日:2022-04-05
申请号:US17160754
申请日:2021-01-28
Applicant: KIOXIA CORPORATION
Inventor: Shinya Okuno , Shigeki Nagasaka , Toshiyuki Kouchi
IPC: G11C16/04 , G11C16/32 , G11C16/26 , G11C16/16 , G11C16/12 , G11C7/02 , G11C7/10 , G11C16/10 , G06F5/06 , G06F13/16
Abstract: A semiconductor device includes a memory circuit, a first FIFO, a second FIFO and an input/output circuit. The memory circuit outputs data. The first FIFO receives data from the memory circuit and outputs data synchronously with a first clock signal. The second FIFO receives data output from the first FIFO and outputs data synchronously with the first clock signal. The input/output circuit outputs data output from the second FIFO. The second FIFO is disposed in the vicinity of the input/output circuit than the first FIFO.
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公开(公告)号:US11270981B2
公开(公告)日:2022-03-08
申请号:US17023617
申请日:2020-09-17
Applicant: KIOXIA CORPORATION
Inventor: Mikihiko Ito , Masaru Koyanagi , Masafumi Nakatani , Shinya Okuno , Shigeki Nagasaka , Masahiro Yoshihara , Akira Umezawa , Satoshi Tsukiyama , Kazushige Kawasaki
IPC: G11C16/30 , H01L25/065 , G11C16/10 , G11C16/14 , G11C16/32 , G11C16/26 , H01L27/10 , G11C16/08 , G11C16/12 , G11C16/34 , G11C16/04
Abstract: According to one embodiment, a memory device includes: a first chip including a first circuit, first and second terminals; a second chip including a second circuit and a third terminal; and an interface chip including first and second voltage generators. The first chip is between the second chip and the interface chip. The first terminal is connected between the first circuit and the first voltage generator. A third end of the second terminal is connected to the third terminal and a fourth end of the second terminal is connected to the second voltage generator. A fifth end of the third terminal is connected to the second circuit and a sixth end of the third terminal is connected to the second voltage generator via the second terminal. The third end overlaps with the sixth end, without overlapping with the fourth end.
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公开(公告)号:US11715529B2
公开(公告)日:2023-08-01
申请号:US17689300
申请日:2022-03-08
Applicant: KIOXIA CORPORATION
Inventor: Shinya Okuno , Shigeki Nagasaka , Toshiyuki Kouchi
IPC: G11C16/04 , G11C16/32 , G11C16/26 , G11C16/16 , G11C16/12 , G11C7/02 , G11C7/10 , G11C16/10 , G06F5/06 , G06F13/16
CPC classification number: G11C16/32 , G06F5/06 , G06F13/1673 , G11C7/02 , G11C7/106 , G11C7/1012 , G11C7/1039 , G11C7/1066 , G11C16/10 , G11C16/12 , G11C16/16 , G11C16/26 , G06F2205/067 , G11C16/0483 , G11C2207/108 , G11C2207/2281 , Y02D10/00
Abstract: A semiconductor device includes a memory circuit, a first FIFO, a second FIFO and an input/output circuit. The memory circuit outputs data. The first FIFO receives data from the memory circuit and outputs data synchronously with a first clock signal. The second FIFO receives data output from the first FIFO and outputs data synchronously with the first clock signal. The input/output circuit outputs data output from the second FIFO. The second FIFO is disposed in the vicinity of the input/output circuit than the first FIFO.
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公开(公告)号:US12100459B2
公开(公告)日:2024-09-24
申请号:US18333661
申请日:2023-06-13
Applicant: KIOXIA CORPORATION
Inventor: Shinya Okuno , Shigeki Nagasaka , Toshiyuki Kouchi
IPC: G11C16/04 , G06F5/06 , G06F13/16 , G11C7/02 , G11C7/10 , G11C16/10 , G11C16/12 , G11C16/16 , G11C16/26 , G11C16/32
CPC classification number: G11C16/32 , G06F5/06 , G06F13/1673 , G11C7/02 , G11C7/1012 , G11C7/1039 , G11C7/106 , G11C7/1066 , G11C16/10 , G11C16/12 , G11C16/16 , G11C16/26 , G06F2205/067 , G11C16/0483 , G11C2207/108 , G11C2207/2281 , Y02D10/00
Abstract: A semiconductor device includes a memory circuit, a first FIFO, a second FIFO and an input/output circuit. The memory circuit outputs data. The first FIFO receives data from the memory circuit and outputs data synchronously with a first clock signal. The second FIFO receives data output from the first FIFO and outputs data synchronously with the first clock signal. The input/output circuit outputs data output from the second FIFO. The second FIFO is disposed in the vicinity of the input/output circuit than the first FIFO.