公开(公告)号：US20210233895A1

公开(公告)日：2021-07-29

申请号：US17007797

申请日：2020-08-31

Applicant: KIOXIA CORPORATION

Inventor： Masashi YAMAOKA ,  Kazuhiro TOMISHIGE ,  Naoki YAMAMOTO

IPC: H01L25/065 ,  G11C5/06 ,  G11C16/04 ,  H01L23/538

Abstract: A semiconductor storage device includes a substrate, a plurality of conductive layers arranged in a first direction intersecting a surface of the substrate, and a semiconductor layer extending in the first direction and penetrating the plurality of conductive layers. The plurality of conductive layers includes a first conductive layer and a second conductive layer that are adjacent to each other, a third conductive layer and a fourth conductive layer that are adjacent to each other, and a fifth conductive layer and a sixth conductive layer that are adjacent to each other. When a distance between the first conductive layer and the second conductive layer in the first direction is a first distance, a distance between the third conductive layer and the fourth conductive layer in the first direction is a second distance, and a distance between the fifth conductive layer and the sixth conductive layer in the first direction is a third distance, the second distance is smaller than the first distance, and the third distance is smaller than the second distance.