公开(公告)号：US20220093515A1

公开(公告)日：2022-03-24

申请号：US17540079

申请日：2021-12-01

Applicant: Intel Corporation

Inventor： Praneeth Kumar Akkinepally ,  Frank Truong ,  Jason M. Gamba ,  Robert Alan May

IPC: H01L23/538 ,  H01L25/065 ,  H01L23/31

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface; a microelectronic component embedded in the package substrate, the microelectronic component including: a substrate having a surface, where the substrate includes a conductive pathway and a mold material region at the surface, where the mold material region includes a through-mold via (TMV) electrically coupled to the conductive pathway, and where the mold material region is at the second surface of the package substrate; and a die conductively coupled, at the second surface of the package substrate, to the package substrate and to the TMV of the microelectronic component.

公开(公告)号：US20210305163A1

公开(公告)日：2021-09-30

申请号：US16832150

申请日：2020-03-27

Applicant: Intel Corporation

Inventor： Praneeth Kumar Akkinepally ,  Frank Truong ,  Jason M. Gamba ,  Robert Alan May

IPC: H01L23/538 ,  H01L25/065 ,  H01L23/31

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface; a microelectronic component embedded in the package substrate, the microelectronic component including: a substrate having a surface, where the substrate includes a conductive pathway and a mold material region at the surface, where the mold material region includes a through-mold via (TMV) electrically coupled to the conductive pathway, and where the mold material region is at the second surface of the package substrate; and a die conductively coupled, at the second surface of the package substrate, to the package substrate and to the TMV of the microelectronic component.

公开(公告)号：US20230345621A1

公开(公告)日：2023-10-26

申请号：US18344944

申请日：2023-06-30

Applicant: Intel Corporation

Inventor： Brandon C. Marin ,  Andrew James Brown ,  Rahul Jain ,  Dilan Seneviratne ,  Praneeth Kumar Akkinepally ,  Frank Truong

IPC: H05K1/02 ,  H01L23/498 ,  H05K1/11 ,  H05K1/18

CPC classification number: H05K1/0228 ,  H01L23/49822 ,  H05K1/0298 ,  H05K1/115 ,  H05K1/111 ,  H05K1/181

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a dielectric layer, in a substrate, the dielectric layer including an electroless catalyst, wherein the electroless catalyst includes one or more of palladium, gold, silver, ruthenium, cobalt, copper, nickel, titanium, aluminum, lead, silicon, and tantalum; a first conductive trace having a first thickness in the dielectric layer, wherein the first thickness is between 4 um and 143 um; and a second conductive trace having a second thickness in the dielectric layer, wherein the second thickness is between 2 um and 141 um, wherein the first thickness is greater than the second thickness, and wherein the first conductive trace and the second conductive trace have sloped sidewalls.

公开(公告)号：US11233009B2

公开(公告)日：2022-01-25

申请号：US16832150

申请日：2020-03-27

Applicant: Intel Corporation

Inventor： Praneeth Kumar Akkinepally ,  Frank Truong ,  Jason M. Gamba ,  Robert Alan May

IPC: H01L23/538 ,  H01L25/065 ,  H01L23/31

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface; a microelectronic component embedded in the package substrate, the microelectronic component including: a substrate having a surface, where the substrate includes a conductive pathway and a mold material region at the surface, where the mold material region includes a through-mold via (TMV) electrically coupled to the conductive pathway, and where the mold material region is at the second surface of the package substrate; and a die conductively coupled, at the second surface of the package substrate, to the package substrate and to the TMV of the microelectronic component.

公开(公告)号：US11688692B2

公开(公告)日：2023-06-27

申请号：US17540079

申请日：2021-12-01

Applicant: Intel Corporation

Inventor： Praneeth Kumar Akkinepally ,  Frank Truong ,  Jason M. Gamba ,  Robert Alan May

IPC: H01L23/538 ,  H01L25/065 ,  H01L23/31

CPC classification number: H01L23/5381 ,  H01L23/3157 ,  H01L23/5384 ,  H01L23/5386 ,  H01L25/0655

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface; a microelectronic component embedded in the package substrate, the microelectronic component including: a substrate having a surface, where the substrate includes a conductive pathway and a mold material region at the surface, where the mold material region includes a through-mold via (TMV) electrically coupled to the conductive pathway, and where the mold material region is at the second surface of the package substrate; and a die conductively coupled, at the second surface of the package substrate, to the package substrate and to the TMV of the microelectronic component.

公开(公告)号：US20200253037A1

公开(公告)日：2020-08-06

申请号：US16268813

申请日：2019-02-06

Applicant: Intel Corporation

Inventor： Brandon C. Marin ,  Andrew James Brown ,  Rahul Jain ,  Dilan Seneviratne ,  Praneeth Kumar Akkinepally ,  Frank Truong

IPC: H05K1/02 ,  H05K1/11 ,  H01L23/498

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a substrate layer having a surface, wherein the substrate layer includes a photo-imageable dielectric (PID) and an electroless catalyst; a first conductive trace having a first thickness on the surface of the substrate layer; and a second conductive trace having a second thickness on the surface of the substrate layer, wherein the first thickness is greater than the second thickness.

公开(公告)号：US20240222274A1

公开(公告)日：2024-07-04

申请号：US18147820

申请日：2022-12-29

Applicant: Intel Corporation

Inventor： Praneeth Kumar Akkinepally ,  Sivakumar Nagarajan ,  Nisha Ananthakrishnan ,  Santosh Shaw ,  Wei Gao

IPC: H01L23/528 ,  H01L23/00 ,  H01L23/48 ,  H01L23/522 ,  H01L25/065

CPC classification number: H01L23/5283 ,  H01L23/481 ,  H01L23/5226 ,  H01L24/16 ,  H01L25/0652 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2225/06541

Abstract: Integrated circuit (IC) dies, microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, an IC die may include a substrate, a front-end-of-line (FEOL) layer over the substrate, where the FEOL layer includes a plurality of transistors, a first back-end-of-line (BEOL) layer comprising first interconnects, a second BEOL layer comprising second interconnects, and a third BEOL layer comprising third interconnects, wherein the first BEOL layer is between the FEOL layer and the second BEOL layer, the second BEOL layer is between the first BEOL layer and the third BEOL layer, and an electrically conductive fill material of the second interconnects is different from an electrically conductive fill material of the first interconnects and from an electrically conductive fill material of the third interconnects.

公开(公告)号：US11737208B2

公开(公告)日：2023-08-22

申请号：US16268813

申请日：2019-02-06

Applicant: Intel Corporation

Inventor： Brandon C. Marin ,  Andrew James Brown ,  Rahul Jain ,  Dilan Seneviratne ,  Praneeth Kumar Akkinepally ,  Frank Truong

IPC: H05K1/02 ,  H05K1/11 ,  H05K1/18 ,  H01L23/498

CPC classification number: H05K1/0228 ,  H01L23/49822 ,  H05K1/0298 ,  H05K1/111 ,  H05K1/115 ,  H05K1/181

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a substrate layer having a surface, wherein the substrate layer includes a photo-imageable dielectric (PID) and an electroless catalyst; a first conductive trace having a first thickness on the surface of the substrate layer; and a second conductive trace having a second thickness on the surface of the substrate layer, wherein the first thickness is greater than the second thickness.

公开(公告)号：US20230085196A1

公开(公告)日：2023-03-16

申请号：US17471623

申请日：2021-09-10

Applicant: Intel Corporation

Inventor： Praneeth Kumar Akkinepally

IPC: H01L23/29 ,  H01L23/00 ,  H01L25/065 ,  H01L23/31 ,  H01L25/00 ,  H01L21/56

Abstract: An integrated circuit (IC) package includes a package substrate, a first die over the package substrate, a stack of a first material and a second material over the first die, where the first material is between the first die and the second material and the second material includes an organic passivation material, interconnect structures including vias on the first die and extending through the first and second materials and conductive bumps on the second material, and a second die over the first die and connected to the first die via the interconnect structures, where a taper angle between an inner portion of a side wall of one of the vias and a plane parallel to a bottom opening of the one of the vias is less than or equal to 90 degrees.