公开(公告)号：US20140120720A1

公开(公告)日：2014-05-01

申请号：US14058317

申请日：2013-10-21

Applicant: Infineon Technologies AG

Inventor： Manfred ENGELHARDT

IPC: H01L21/285

CPC classification number: H01L21/28506 ,  H01L21/3086 ,  H01L21/78

Abstract: One or more embodiments relate to a method of making a semiconductor structure, comprising: forming a opening partially through a semiconductor substrate, the opening including an upper portion and a lower portion; forming a first dielectric layer over a sidewall surface of the upper portion, wherein the first dielectric layer does not overlie a sidewall surface of the lower portion; and forming a conductive material over a sidewall surface of the first dielectric layer, the conductive material not being in direct contact with a sidewall surface of the lower portion.

Abstract translation: 一个或多个实施例涉及制造半导体结构的方法，包括：部分地通过半导体衬底形成开口，所述开口包括上部和下部; 在所述上部的侧壁表面上形成第一电介质层，其中所述第一介电层不覆盖所述下部的侧壁表面; 以及在所述第一介电层的侧壁表面上形成导电材料，所述导电材料不与所述下部的侧壁表面直接接触。

公开(公告)号：US20150108666A1

公开(公告)日：2015-04-23

申请号：US14058213

申请日：2013-10-18

Applicant: Infineon Technologies AG

Inventor： Manfred ENGELHARDT ,  Edward Fuergut ,  Hannes Eder

IPC: H01L23/28 ,  H01L21/56

CPC classification number: H01L23/28 ,  H01L21/56 ,  H01L21/561 ,  H01L21/76251 ,  H01L21/76254 ,  H01L21/76259 ,  H01L21/78 ,  H01L23/3128 ,  H01L23/3185 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a thinned encapsulated chip structure, wherein the method comprises providing a separation structure arranged within an electronic chip, encapsulating part of the electronic chip by an encapsulating structure, and thinning selectively the electronic chip partially encapsulated by the encapsulating structure so that the encapsulating structure remains with a larger thickness than the thinned electronic chip, wherein the separation structure functions as a thinning stop.

Abstract translation: 一种形成薄化的封装芯片结构的方法，其中所述方法包括提供布置在电子芯片内的分离结构，通过封装结构封装电子芯片的一部分，并且选择性地稀释由封装结构部分封装的电子芯片，使得 封装结构的厚度比薄的电子芯片保持更大的厚度，其中分离结构用作减薄停止。

公开(公告)号：US20170062289A1

公开(公告)日：2017-03-02

申请号：US15247400

申请日：2016-08-25

Applicant: Infineon Technologies AG

Inventor： Carsten VON KOBLINSKI ,  Manfred ENGELHARDT

IPC: H01L21/66 ,  H01L21/304 ,  H01J37/32 ,  H01L21/308

CPC classification number: H01L22/26 ,  B24B37/042 ,  H01J37/3178 ,  H01J37/32651 ,  H01J37/32935 ,  H01J2237/026 ,  H01J2237/24578 ,  H01J2237/334 ,  H01L21/0274 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3083 ,  H01L21/6715 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/20

Abstract: A method of thinning a substrate, the method comprising subjecting the substrate to a thinning process, determining information indicative of a surface topography of the thinned substrate, and selectively removing material from at least one surface portion of the thinned substrate based on the determined information to thereby at least partially balance out thickness variations.

Abstract translation: 一种减薄衬底的方法，所述方法包括使衬底经历变薄处理，确定指示所述薄化衬底的表面形貌的信息，以及基于所确定的信息从所述薄化衬底的至少一个表面部分中选择性地去除材料， 从而至少部分地平衡厚度变化。