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    Semiconductor Diode and Method of Manufacturing a Semiconductor Diode
    2.
    发明申请
    Semiconductor Diode and Method of Manufacturing a Semiconductor Diode 有权
    半导体二极管及制造半导体二极管的方法

    公开(公告)号：US20150206983A1

    公开(公告)日：2015-07-23

    申请号：US14162311

    申请日：2014-01-23

    Applicant: Infineon Technologies AG

    Inventor： Hans Peter Felsl ,  Elmar Falck ,  Manfred Pfaffenlehner ,  Frank Hille ,  Andreas Haertl ,  Holger Schulze ,  Daniel Schloegl

    IPC: H01L29/861 ,  H01L29/66

    CPC classification number: H01L29/0603 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/66128 ,  H01L29/8611

    Abstract: A semiconductor diode includes a semiconductor body having opposite first and second sides. A first and a second semiconductor region are consecutively arranged along a lateral direction at the second side. The first and second semiconductor regions are of opposite first and second conductivity types and are electrically coupled to an electrode at the second side. The semiconductor diode further includes a third semiconductor region of the second conductivity type buried in the semiconductor body at a distance from the second side. The second and third semiconductor regions are separated from each other.

    Abstract translation: 半导体二极管包括具有相反的第一和第二侧面的半导体本体。 第一和第二半导体区域沿着第二侧的横向连续地布置。 第一和第二半导体区域具有相反的第一和第二导电类型，并且在第二侧电耦合到电极。 半导体二极管还包括第二导电类型的第三半导体区域，该第二半导体区域埋在半导体本体中距离第二侧一定距离。 第二和第三半导体区域彼此分离。

    Semiconductor to Metal Transition
    9.
    发明申请
    Semiconductor to Metal Transition 有权
    半导体到金属转换

    公开(公告)号：US20160141406A1

    公开(公告)日：2016-05-19

    申请号：US14940797

    申请日：2015-11-13

    Applicant: Infineon Technologies AG

    Inventor： Andreas Haertl ,  Frank Hille ,  Francisco Javier Santos Rodriguez ,  Daniel Schloegl ,  Andre Rainer Stegner ,  Christoph Weiss

    IPC: H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/739 ,  H01L29/66

    CPC classification number: H01L29/063 ,  H01L21/26506 ,  H01L21/28568 ,  H01L29/0607 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/32 ,  H01L29/36 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66136 ,  H01L29/66325 ,  H01L29/66333 ,  H01L29/66674 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/7801 ,  H01L29/861

    Abstract: A semiconductor device includes a diffusion barrier layer, a first semiconductor region having first charge carriers of a first conductivity type and a second semiconductor region having second charge carriers. The first semiconductor region includes a transition region in contact with the second semiconductor region, the transition region having a first concentration of the first charge carriers, a contact region in contact with the diffusion barrier layer, the contact region having a second concentration of the first charge carriers, wherein the second concentration is higher than the first concentration, and a damage region between the contact region and the transition region. The damage region is configured for reducing the lifetime and/or the mobility of the first charge carriers of the damage region as compared to the lifetime and/or the mobility of the first charge carriers of the contact region and the transition region.

    Abstract translation: 半导体器件包括扩散阻挡层，具有第一导电类型的第一电荷载流子的第一半导体区域和具有第二电荷载流子的第二半导体区域。 第一半导体区域包括与第二半导体区域接触的过渡区域，过渡区域具有第一电荷载流子的第一浓度，与扩散阻挡层接触的接触区域，接触区域具有第一浓度的第一 电荷载体，其中第二浓度高于第一浓度，以及在接触区域和过渡区域之间的损伤区域。 损伤区域被配置为与接触区域和过渡区域的第一电荷载流子的寿命和/或迁移率相比，减小损伤区域的第一电荷载流子的寿命和/或迁移率。

    METHOD FOR PROCESSING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
    10.
    发明申请
    METHOD FOR PROCESSING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
    用于处理半导体器件和半导体器件的方法

    公开(公告)号：US20150340234A1

    公开(公告)日：2015-11-26

    申请号：US14284460

    申请日：2014-05-22

    Applicant: Infineon Technologies AG

    Inventor： Hans-Joachim Schulze ,  Andreas Haertl ,  Francisco Javier Santos Rodriguez ,  André Rainer Stegner ,  Daniel Schloegl

    IPC: H01L21/04 ,  H01L29/47

    CPC classification number: H01L29/47 ,  H01L21/0435 ,  H01L21/28512 ,  H01L21/28537

    Abstract: A method for processing a semiconductor device in accordance with various embodiments may include: depositing a first metallization material over a semiconductor body; performing a heating process so as to form at least one region in the semiconductor body including a eutectic of the first metallization material and material of the semiconductor body; and depositing a second metallization material over the semiconductor body so as to contact the semiconductor body via the at least one region in the semiconductor body.

    Abstract translation: 根据各种实施例的用于处理半导体器件的方法可以包括：在半导体本体上沉积第一金属化材料; 进行加热处理，以在所述半导体主体中形成至少一个包括所述第一金属化材料的共晶体和所述半导体本体的材料的区域; 以及在所述半导体主体上沉积第二金属化材料，以便经由所述半导体本体中的所述至少一个区域接触所述半导体本体。

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