Abstract:
According to the present invention, there is provided a superconducting circuit including a Josephson tunnel junction 1 and a load resistor 2 connected in parallel to the Josephson tunnel junction, in which a current source 5 is connected to the input terminal for the Josephson tunnel junction 1 and which has a pulse generator 3 in order to superimpose a pulse current to the current i from the current source 5.As the input signal, a current pulse is given to the current i within the range of below the critical current of the Josephson tunnel junction by means of the foregoing pulse generator 3 so that an excellent separation of the input and output is achieved without using any magnetic coupling circuit.
Abstract:
A Josephson memory circuit comprises a closed superconducting loop having a first node and including a first Josephson gate therein, and a first line connected to the node. The circuit also includes a second line provided to electromagnetically couple to the first Josephson gate, a second Josephson gate provided so close to the superconducting loop as to electromagnetically couple to the superconducting loop, and a third line connected to the second Josephson gate and provided to electromagnetically couple to the first Josephson gate.
Abstract:
In a method for efficiently analyzing a posttranslational modification of a protein using no enzyme, a protein or peptide to be analyzed is reacted with an acid (a thioester or hydrazine) under certain conditions. This makes it possible to detect variously modified states of a protein or peptide, whereby the identification of each specific modifying group and the position of each modified amino acid can be efficiently analyzed using a chemical method and a mass spectrometric apparatus.
Abstract:
A superconducting device including first and second trenches formed on a principal surface of a semiconductor substrate, separated from each other, and first and second superconductor electrodes filled in the first and second trenches and planarized to have a surface coplanar with the principal surface of the semiconductor substrate. The first and second superconductor electrodes form a separation zone which is defined by opposing sides of the first and second superconductor electrodes. An insulating layer is formed to cover a portion of the first superconductor electrode, the separation zone and a portion of the second superconductor electrode, and a gate electrode is formed on the insulating layer so as to be positioned above at least the separation zone. The above mentioned superconducting device can be formed by forming first and second trenches on a principal surface of a semiconductor substrate separate from each other, and depositing a superconductor layer so as to cover a whole of the principal surface of the semiconductor substrate. A resin layer is deposited on the whole of the principal surface of the semiconductor substrate, and etch-back is performed to completely remove the deposited resin layer and also to remove the deposited superconductor layer from a surface excluding the first and second trenches, so that the superconductor layer remaining in the first and second trenches respectively form first and second superconductor electrodes planarized to have a surface coplanar with the principal surface of the semiconductor substrate. An insulating layer and a gate electrode are formed to cover at least a separation zone between the first and second trenches.
Abstract:
A superconductive circuit is fabricated on a substrate with a major surface, and comprises a wiring layer of superconductive oxide with the a-b plane orientation substantially parallel to the major surface, and a Josephson junction electrically coupled with the wiring layer, wherein the josephson junction comprises a lower electrode of superconductive oxide having the a-b plane orientation substantially perpendicular to the major surface and embedded into the wiring layer so that the structure achieves both long coherent length desirable for large design margin of the junction as well as large amount of current passing through the wiring layer.