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公开(公告)号：US11646199B2
公开(公告)日：2023-05-09
申请号：US17323178
申请日：2021-05-18
Applicant: International Business Machines Corporation , ULVAC, Inc.
Inventor： John Rozen , Martin Michael Frank , Yohei Ogawa
CPC classification number: H01L21/0228 , C23C16/405 , C23C16/45527 , H01L21/02244 , H01L21/02255 , H01L29/40114 , H01L45/1616 , H01L45/1633 , H01L29/517 , H01L45/146
Abstract: Embodiments of the present invention are directed to forming a sub-stoichiometric metal-oxide film using a modified atomic layer deposition (ALD) process. In a non-limiting embodiment of the invention, a first precursor and a second precursor are selected. The first precursor can include a metal and a first ligand. The second precursor can include the same metal and a second ligand. A substrate can be exposed to the first precursor during a first pulse of an ALD cycle. The substrate can be exposed to the second precursor during a second pulse of the ALD cycle. The second pulse can occur directly after the first pulse without an intervening thermal oxidant. The substrate can be exposed to the thermal oxidant during a third pulse of the ALD cycle.
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公开(公告)号：US20220319588A1
公开(公告)日：2022-10-06
申请号：US17217767
申请日：2021-03-30
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： John Rozen , Seyoung Kim , Paul Michael Solomon
Abstract: An embodiment of the invention may include a memory structure. The memory structure may include a first terminal connected to a first contact. The memory structure may include a second terminal connected to a second contact and a third contact. The memory structure may include a multi-level nonvolatile electrochemical cell having a variable resistance channel and a programming gate. The memory structure may include the first contact and second contact connected to the variable resistance channel. The memory structure may include the third contact is connected to the programming gate. This may enable decoupled read-write operations of the device.
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公开(公告)号：US11195929B2
公开(公告)日：2021-12-07
申请号：US16668473
申请日：2019-10-30
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , ULVAC, Inc.
Inventor： Takashi Ando , Ruqiang Bao , Masanobu Hatanaka , Vijay Narayanan , Yohei Ogawa , John Rozen
IPC: H01L29/49 , H01L29/43 , H01L27/092 , H01L21/285 , H01L21/28 , H01L21/8238 , H01L29/423 , H01L29/66 , B82Y10/00 , H01L29/40 , H01L29/78 , H01L29/06 , H01L29/775
Abstract: A gate structure for effective work function adjustments of semiconductor devices that includes a gate dielectric on a channel region of a semiconductor device; a first metal nitride in direct contact with the gate dielectric; a conformal carbide of Aluminum material layer having an aluminum content greater than 30 atomic wt. %; and a second metal nitride layer in direct contact with the conformal aluminum (Al) and carbon (C) containing material layer. The conformal carbide of aluminum (Al) layer includes aluminum carbide, or Al4C3, yielding an aluminum (Al) content up to 57 atomic % (at. %) and work function setting from 3.9 eV to 5.0 eV at thicknesses below 25 Å. Such structures can present metal gate length scaling and resistance benefit below 25 nm compared to state of the art work function electrodes.
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公开(公告)号：US11189482B2
公开(公告)日：2021-11-30
申请号：US16347904
申请日：2018-05-11
Applicant: ULVAC, INC. , INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Masanobu Hatanaka , Yohei Ogawa , Keon-chang Lee , Nobuyuki Kato , Takakazu Yamada , John Rozen
IPC: C23C16/32 , H01L21/02 , C23C16/34 , C23C16/455
Abstract: A thin film formation method includes setting a film formation subject to 200° C. or higher. A first step includes changing a first state, in which a film formation material and a carrier gas are supplied so that the film formation material collects on the film formation subject, to a second state, in which the film formation material is omitted. A second step includes changing a third state, in which a hydrogen gas and a carrier gas are supplied to reduce the film formation material, to a fourth state, in which the hydrogen gas is omitted. The film formation material is any one of Al(CxH2x+1)3, Al(CxH2x+1)2H, and Al(CxH2x+1)2Cl. The first step and the second step are alternately repeated to form an aluminum carbide film on the film formation subject such that a content rate of aluminum atoms is 20 atomic percent or greater.
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公开(公告)号：US11081343B2
公开(公告)日：2021-08-03
申请号：US16516423
申请日：2019-07-19
Applicant: International Business Machines Corporation , ULVAC, Inc.
Inventor： John Rozen , Martin Michael Frank , Yohei Ogawa
Abstract: Embodiments of the present invention are directed to forming a sub-stoichiometric metal-oxide film using a modified atomic layer deposition (ALD) process. In a non-limiting embodiment of the invention, a first precursor and a second precursor are selected. The first precursor can include a metal and a first ligand. The second precursor can include the same metal and a second ligand. A substrate can be exposed to the first precursor during a first pulse of an ALD cycle. The substrate can be exposed to the second precursor during a second pulse of the ALD cycle. The second pulse can occur directly after the first pulse without an intervening thermal oxidant. The substrate can be exposed to the thermal oxidant during a third pulse of the ALD cycle.
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公开(公告)号：US20210020426A1
公开(公告)日：2021-01-21
申请号：US16514351
申请日：2019-07-17
Applicant: International Business Machines Corporation , ULVAC, Inc.
Inventor： Martin Michael Frank , John Rozen , Yohei Ogawa
IPC: H01L21/02 , H01L29/78 , H01L45/00 , H01L29/788
Abstract: Embodiments of the present invention are directed to forming a ternary compound using a modified atomic layer deposition (ALD) process. In a non-limiting embodiment of the invention, a first precursor and a second precursor are selected. The first precursor includes a first metal and a first ligand. The second precursor includes a second metal and a second ligand. The second ligand is selected based on the first ligand to target a second metal uptake. A substrate is exposed to the first precursor during a first pulse of an ALD cycle and the substrate is exposed to the second precursor during a second pulse of the ALD cycle, the second pulse occurring after the first pulse. The substrate is exposed to a third precursor (e.g., an oxidant) during a third pulse of the ALD cycle. The ternary compound can include a ternary oxide film.
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公开(公告)号：US10885431B2
公开(公告)日：2021-01-05
申请号：US16548050
申请日：2019-08-22
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Teodor K. Todorov , John Rozen , Douglas M. Bishop
Abstract: A neuromorphic device includes a first electrode layer arranged on a substrate, and an electrolyte layer arranged on the first electrode layer. The electrolyte layer includes a solid electrolyte material. The neuromorphic device further includes an ion permeable, electrically conductive membrane arranged on the electrolyte layer and an ion intercalation layer arranged on the ion permeable, electrically conductive membrane. The neuromorphic device includes a second electrode layer arranged on the ion intercalation layer.
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公开(公告)号：US20200279154A1
公开(公告)日：2020-09-03
申请号：US16290585
申请日：2019-03-01
Applicant: International Business Machines Corporation
Inventor： Teodor K. Todorov , Douglas M. Bishop , Jianshi Tang , John Rozen
Abstract: A neuromorphic semiconductor device includes a copper-based intercalation channel disposed on an insulative layer, a source contact and a drain contact of a substrate. A copper-based electrolyte layer is disposed on the copper-based intercalation channel and a copper-based gate electrode is disposed on the copper-based electrolyte layer.
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公开(公告)号：US10467524B1
公开(公告)日：2019-11-05
申请号：US16001336
申请日：2018-06-06
Applicant: International Business Machines Corporation
Inventor： Teodor K. Todorov , John Rozen , Douglas M. Bishop
Abstract: A neuromorphic device includes a first electrode layer arranged on a substrate, and an electrolyte layer arranged on the first electrode layer. The electrolyte layer includes a solid electrolyte material. The neuromorphic device further includes an ion permeable, electrically conductive membrane arranged on the electrolyte layer and an ion intercalation layer arranged on the ion permeable, electrically conductive membrane. The neuromorphic device includes a second electrode layer arranged on the ion intercalation layer.
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公开(公告)号：US10283610B2
公开(公告)日：2019-05-07
申请号：US15894246
申请日：2018-02-12
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , ULVAC, Inc.
Inventor： Vijay Narayanan , Yohei Ogawa , John Rozen
IPC: H01L29/51 , H01L29/423 , H01L21/28 , H01L29/78 , H01L29/20 , H01L29/66 , H01L21/02 , H01L21/306 , H01L29/06
Abstract: A method of forming a gate stack that includes treating a semiconductor substrate with a wet etch chemistry to clean a surface of the semiconductor substrate and form an oxide containing interfacial layer, and converting the oxide containing interfacial layer to a binary alloy oxide based interlayer using a plasma deposition sequence including alternating a metal gas precursor and a nitrogen and/or hydrogen containing plasma. The method of forming the gate stack may further include forming a high-k dielectric layer atop the binary alloy oxide based interlayer.
