公开(公告)号：US20250031379A1

公开(公告)日：2025-01-23

申请号：US18397387

申请日：2023-12-27

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Qing LUO ,  Yuan WANG ,  Ming LIU

IPC: H10B51/30 ,  H01L21/28 ,  H01L29/51 ,  H01L29/78 ,  H10B53/30

Abstract: The present disclosure provides a semiconductor device based on a dielectric material containing a metal interstitial impurity, including: a substrate, a dielectric material layer, and a functional layer. A material for preparing the dielectric material layer is a compound containing the metal interstitial impurity. The dielectric material layer and/or the functional layer is configured to subject to at least one of electricity, heat, light or magnetism, such that the dielectric material layer reaches a crystallization temperature to transit from a first state to a second state.