公开(公告)号：US20240334838A1

公开(公告)日：2024-10-03

申请号：US18293846

申请日：2022-03-02

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Guozhong Xing ,  Long Liu ,  Xuefeng Zhao ,  Di Wang ,  Huai Lin ,  Hao Zhang ,  Ziwei Wang

IPC: H10N50/10 ,  G11C5/06 ,  G11C11/16 ,  H10B61/00 ,  H10N50/20 ,  H10N50/85 ,  H10N52/00

CPC classification number: H10N50/10 ,  G11C5/063 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H10B61/20 ,  H10N50/20 ,  H10N50/85 ,  H10N52/101

Abstract: The present disclosure provides an SOT-MRAM memory cell, including: a bottom electrode; a magnetic tunnel junction layer located on the bottom electrode; an orbital Hall effect layer located on the magnetic tunnel junction layer; a first transistor, a drain of which is connected to the orbital Hall effect layer; and a second transistor, a drain of which is connected to the bottom electrode. The present disclosure further provides an SOT-MRAM memory, an operation method, and an SOT-MRAM memory array.

公开(公告)号：US20230263070A1

公开(公告)日：2023-08-17

申请号：US18003913

申请日：2020-12-31

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Guozhong Xing ,  Di Wang ,  Huai Lin ,  Long Liu ,  Yu Liu ,  Hangbing Lv ,  Changqing Xie ,  Ling Li ,  Ming Liu

IPC: H10N50/10 ,  H10B61/00 ,  H10N50/85 ,  G11C11/16

CPC classification number: H10N50/10 ,  H10B61/22 ,  H10N50/85 ,  G11C11/161

Abstract: The present disclosure relates to a field of memory technical, and in particular to a magnetoresistive device, a method for changing a resistance state of the magnetoresistive device, and a synapse learning module. The magnetoresistive device includes a top electrode, a ferromagnetic reference layer, a tunneling layer, a ferromagnetic free layer, a spin-orbit coupling layer, and a bottom electrode that are arranged in sequence along a preset direction, where the spin-orbit coupling layer includes a first thickness region and a second thickness region distributed alternately, and a thickness of the first thickness region is different form a thickness of the second thickness region; and the ferromagnetic free layer includes a pinning region, and a position of the pinning region is in one-to-one correspondence with a position of the first thickness region.

公开(公告)号：US20240013826A1

公开(公告)日：2024-01-11

申请号：US18251699

申请日：2021-10-13

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Guozhong Xing ,  Di Wang ,  Long Liu ,  Huai Lin ,  Ming Liu

IPC: G11C11/16 ,  H10B61/00 ,  H10N50/20 ,  G06F17/16

CPC classification number: G11C11/161 ,  H10B61/22 ,  H10N50/20 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1675 ,  G06F17/16

Abstract: Provided is a spintronic device, a memory cell, a memory array, and a read and write circuit applied in a field of integration technology. The spintronic device includes: a bottom electrode; a spin orbit coupling layer, arranged on the bottom electrode; at least one pair of magnetic tunnel junctions, arranged on the spin orbit coupling layer, wherein each of the magnetic tunnel junctions includes a free layer, a tunneling layer, and a reference layer arranged sequentially from bottom to top, and wherein magnetization directions of reference layers of two magnetic tunnel junctions of each pair of the magnetic tunnel junctions are opposite; and a top electrode, arranged on a reference layer of each of the magnetic tunnel junctions.

公开(公告)号：US20230397504A1

公开(公告)日：2023-12-07

申请号：US18249805

申请日：2021-05-17

Applicant: Institute of Microelectronics, Chinese Academy of Sciences

Inventor： Guozhong Xing ,  Di Wang ,  Ming Liu

IPC: H10N52/00 ,  H10N52/85 ,  H10N59/00 ,  G06N3/063

CPC classification number: H10N52/101 ,  H10N52/85 ,  H10N59/00 ,  G06N3/063

Abstract: Provided is an all-electrically-controlled spintronic neuron device, a neuron circuit and a neural network. The neuron device includes: a bottom antiferromagnetic pinning layer; a synthetic antiferromagnetic layer formed on the bottom antiferromagnetic pinning layer; a potential barrier layer formed on the ferromagnetic free layer, wherein a region of the ferromagnetic free layer directly opposite to the potential barrier layer forms a threshold region; a ferromagnetic reference layer formed on the potential barrier layer; wherein the potential barrier layer, the ferromagnetic reference layer and the ferromagnetic free layer form a magnetic tunnel junction; a first antiferromagnetic pinning layer and a second antiferromagnetic pinning layer formed on an exposed region of the ferromagnetic free layer except the region directly opposite the potential barrier layer, and located on two sides of the potential barrier layer; and a first electrode formed on the ferromagnetic reference layer.