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1.发明授权公开(公告)号：US09825218B2
公开(公告)日：2017-11-21
申请号：US14881372
申请日：2015-10-13
Inventor： Allan MacDonald , Leonard Franklin Register, II , Emanuel Tutuc , Inti Sodemann , Hua Chen , Xuehao Mou , Sanjay K. Banerjee
CPC classification number: H01L43/065 , G11C11/161 , H01L43/04 , H01L43/08 , H01L43/10 , H03K19/18
Abstract: A device or class of devices that provides a mechanism for controlling charge current flow in transistors that employs collective magnetic effects to overcome voltage limitations associated with single-particle thermionic emission as in conventional MOSFETs. Such a device may include two or more magnetic stacks with an easy-in-plane ferromagnetic film sandwiched between oppositely magnetically oriented perpendicular magnetization anisotropy (PMA) ferromagnets. Each stack includes two non-magnetic layers separating the easy-plane ferromagnetic film from the PMA layers. Charge current flow through one of these stacks controls the current-voltage negative differential resistance characteristics of the second stack through collective magnetic interactions. This can be exploited in a variety of digital logic gates consuming less energy than conventional CMOS integrated circuits. Furthermore, the easy-in-plane magnetic films may be subdivided into regions coupled through exchange interactions and the in-plane fixed magnetic layers in the input magnetic stacks can be used in non-volatile logic and memory.
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2.发明申请
公开(公告)号：US20170104151A1
公开(公告)日：2017-04-13
申请号：US14881372
申请日：2015-10-13
Inventor： Sanjay K. Banerjee , Allan MacDonald , Leonard Franklin Register, II , Emanuel Tutuc , Inti Sodemann , Hua Chen , Xuehao Mou
CPC classification number: H01L43/065 , G11C11/161 , H01L43/04 , H01L43/08 , H01L43/10 , H03K19/18
Abstract: A device or class of devices that provides a mechanism for controlling charge current flow in transistors that employs collective magnetic effects to overcome voltage limitations associated with single-particle thermionic emission as in conventional MOSFETs. Such a device may include two or more magnetic stacks with an easy-in-plane ferromagnetic film sandwiched between oppositely magnetically oriented perpendicular magnetization anisotropy (PMA) ferromagnets. Each stack includes two non-magnetic layers separating the easy-plane ferromagnetic film from the PMA layers. Charge current flow through one of these stacks controls the current-voltage negative differential resistance characteristics of the second stack through collective magnetic interactions. This can be exploited in a variety of digital logic gates consuming less energy than conventional CMOS integrated circuits. Furthermore, the easy-in-plane magnetic films may be subdivided into regions coupled through exchange interactions and the in-plane fixed magnetic layers in the input magnetic stacks can be used in non-volatile logic and memory.
