Method for manufacturing display backplane, display backplane, and display device

    公开(公告)号:US11805671B2

    公开(公告)日:2023-10-31

    申请号:US17356380

    申请日:2021-06-23

    CPC classification number: H10K50/844 H10K71/00 H10K77/10

    Abstract: A method for manufacturing a display backplane, a display backplate, and a display device are disclosed. The method includes: forming a planarization layer on one side of a substrate inside a pixel region, a partition region, and a perforation region; forming at least one girdle of annular passivation layer disposed around the perforation region on a surface, away from the substrate, of the planarization layer inside a portion of the partition layer; removing a portion of the planarization layer, inside the partition region, uncovered by the annular passivation layer and the planarization layer, inside the partition region, partially covered by the annular passivation layer, to obtain at least one girdle of annular isolation columns disposed between the substrate and the annular passivation layer and around the perforation region; and forming organic light-emitting elements on one side of the planarization layer away from the substrate to obtain the display backplane.

    Organic Light Emitting Diode Display Panel, Manufacturing Method Thereof, and Display Device

    公开(公告)号:US20250040350A1

    公开(公告)日:2025-01-30

    申请号:US18280590

    申请日:2022-07-29

    Abstract: An organic light emitting diode display panel, a manufacturing method thereof and a display device are provided, the organic light emitting diode display panel includes: a pixel defining layer, which includes a first opening, a second opening and a pixel defining structure between the first opening and the second opening, the first opening is provided with a light emitting layer and a first electrode which are stacked, the second opening is not provided with the light emitting layer; a first lateral edge of the pixel defining structure adjacent to the first opening forms a first included angle with a plane parallel to a main surface of the base substrate, and a second lateral edge of the pixel defining structure adjacent to the second opening forms a second included angle with a plane parallel to the base substrate, the first included angle is smaller than the second included angle.

    DISPLAY SUBSTRATE AND DISPLAY APPARATUS

    公开(公告)号:US20250008822A1

    公开(公告)日:2025-01-02

    申请号:US18264033

    申请日:2022-11-17

    Abstract: A display substrate is provided. The display substrate includes a plurality of islands, a plurality of gaps, and a plurality of bridges; wherein a respective island of the plurality of islands includes a base substrate; one or more light emitting elements on the base substrate; and an encapsulating layer on a side of the one or more light emitting elements away from the base substrate, encapsulating the one or more light emitting elements; the encapsulating layer includes a first inorganic encapsulating sub-layer and a second inorganic encapsulating sub-layer; and in a cross-section along a plane perpendicular to the base substrate and intersecting the first inorganic encapsulating sub-layer and the second inorganic encapsulating sub-layer, an outermost edge of the first inorganic encapsulating sub-layer is encapsulated by the second inorganic encapsulating sub-layer, thereby rendering the outermost edge of the first inorganic encapsulating sub-layer unexposed.

    Thin film transistor, method for manufacturing the same, and display device

    公开(公告)号:US10770595B2

    公开(公告)日:2020-09-08

    申请号:US16427743

    申请日:2019-05-31

    Abstract: A thin film transistor, a method for manufacturing the same and a display device are provided in the present disclosure. The thin film transistor includes an active layer, a first electrode and a second electrode, and a gate electrode. The active layer includes an active layer body and an electrode hole in a center of the active layer body. The gate electrode is insulated and spaced apart from the active layer body and is disposed to surround the electrode hole. The first electrode and the second electrode are insulated from each other, both coupled to the active layer body, and insulated and spaced apart from the gate electrode. At least a portion of an orthographic projection of the first electrode on the active layer is within the electrode hole. An orthographic projection of the second electrode on the active layer surrounds the active layer body.

    Method for manufacturing thin film transistor

    公开(公告)号:US10297678B2

    公开(公告)日:2019-05-21

    申请号:US15989773

    申请日:2018-05-25

    Abstract: The present disclosure provides a method for manufacturing a thin film transistor comprising, forming a pattern of an active layer on a substrate through a patterning process; performing ion doping to a channel region of the active layer; forming a gate insulating layer; forming a pattern of a gate through the patterning process; performing ion doping to a source contact region and a drain contact region of the active layer; forming an interlayer insulating layer; and performing laser annealing to the active layer, so as to make the active layer crystallize and the ions doped in the channel region, the source contact region and the drain contact region of the active layer activate simultaneously. In this method, the crystallization of the active layer and the activation of the ions doped in the active layer are implemented in the same process, which reduces the process cost and improves the efficiency.

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