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    Auto capacitance tuner current compensation to control one or more film properties through target life
    2.
    发明授权
    Auto capacitance tuner current compensation to control one or more film properties through target life 有权

    公开(公告)号：US10266940B2

    公开(公告)日：2019-04-23

    申请号：US15050409

    申请日：2016-02-22

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Zhenbin Ge ,  Vivek Gupta ,  Adolph Miller Allen ,  Ryan Hanson

    IPC: C23C14/34 ,  C23C14/54 ,  H01J37/32 ,  H03J7/04 ,  H03L7/06

    Abstract: In some embodiments a method of depositing a metal-containing layer atop a substrate disposed in a physical vapor deposition (PVD) chamber includes: providing a plasma forming gas to a processing region of the PVD chamber; providing a first amount of RF power to a target assembly disposed opposite the substrate to form a plasma within the processing region of the PVD chamber; sputtering source material from the target assembly to deposit a metal-containing layer onto the substrate, wherein the source material is at a first erosion state; and tuning an auto capacitance tuner coupled to a substrate support while sputtering source material to maintain an ion energy at a surface of the substrate within a predetermined range as the target erodes from the first erosion state to a second erosion state.

    Dual-direction chemical delivery system for ALD/CVD chambers
    3.
    发明授权
    Dual-direction chemical delivery system for ALD/CVD chambers 有权
    用于ALD / CVD室的双向化学物质输送系统

    公开(公告)号：US09353440B2

    公开(公告)日：2016-05-31

    申请号：US14137007

    申请日：2013-12-20

    Applicant: Applied Materials, Inc.

    Inventor： Zhenbin Ge ,  Chien-Teh Kao ,  Joel M. Huston ,  Mei Chang

    IPC: C23C16/455 ,  B08B9/032 ,  C23C16/44

    CPC classification number: C23C16/45565 ,  B08B9/0325 ,  C23C14/22 ,  C23C16/4412 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/52 ,  Y10T137/4259

    Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

    Abstract translation: 提供了具有输送通道的气体分配设备，其具有入口端，出口端和沿着该长度间隔开的多个孔。 入口端可连接到入口气体源，出口端可与真空源连接。 还提供了具有螺旋输送通道的气体分配设备，缠绕在一起的螺旋输送通道，分流输送通道，合并输送通道和成形输送通道，其中入口端和出口端构造成用于在输送通道内快速交换气体。

    Counter based time compensation to reduce process shifting in reactive magnetron sputtering reactor
    4.
    发明授权
    Counter based time compensation to reduce process shifting in reactive magnetron sputtering reactor 有权

    公开(公告)号：US10400327B2

    公开(公告)日：2019-09-03

    申请号：US15007181

    申请日：2016-01-26

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Mohammad Kamruzzaman Chowdhury ,  Zhenbin Ge ,  Adolph Miller Allen

    IPC: C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  H01J37/34 ,  C23C14/52

    Abstract: A method of processing a substrate includes: sputtering target material for a first amount of time using a first plasma formed from an inert gas and a first amount of power; determining a first counter, based on a product of a flow rate of the inert gas, the first amount of power, and the first amount of time; sputtering a metal compound material for a second amount of time using a second plasma formed from a process gas comprising a reactive gas and an inert gas and a second amount of power; determining a second counter based on a product of a flow rate of the process gas, the second amount of power, and the second amount of time; determining a third counter; and depositing a metal compound layer onto a predetermined number of substrates, wherein a deposition time for each substrate is adjusted based on the third counter.

    Dual-Direction Chemical Delivery System for ALD/CVD Chambers
    7.
    发明申请
    Dual-Direction Chemical Delivery System for ALD/CVD Chambers 有权
    用于ALD / CVD室的双向化学物质输送系统

    公开(公告)号：US20150176126A1

    公开(公告)日：2015-06-25

    申请号：US14137007

    申请日：2013-12-20

    Applicant: Applied Materials, Inc.

    Inventor： Zhenbin Ge ,  Chien-Teh Kao ,  Joel M. Huston ,  Mei Chang

    IPC: C23C16/455 ,  B08B9/032

    CPC classification number: C23C16/45565 ,  B08B9/0325 ,  C23C14/22 ,  C23C16/4412 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/52 ,  Y10T137/4259

    Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

    Abstract translation: 提供了具有输送通道的气体分配设备，其具有入口端，出口端和沿着该长度间隔开的多个孔。 入口端可连接到入口气体源，出口端可与真空源连接。 还提供了具有螺旋输送通道的气体分配设备，缠绕在一起的螺旋输送通道，分流输送通道，合并输送通道和成形输送通道，其中入口端和出口端构造成用于在输送通道内快速交换气体。

    Methods for processing a substrate using a selectively grounded and movable process kit ring
    8.
    发明授权
    Methods for processing a substrate using a selectively grounded and movable process kit ring 有权
    使用选择性接地和可移动工艺套件环处理衬底的方法

    公开(公告)号：US08865012B2

    公开(公告)日：2014-10-21

    申请号：US13831424

    申请日：2013-03-14

    Applicant: Applied Materials, Inc.

    Inventor： Zhenbin Ge ,  Alan A. Ritchie

    IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/3065

    CPC classification number: H01L21/68735 ,  C23C16/0245 ,  C23C16/509 ,  H01J37/32651 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76865

    Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method for processing a substrate may include placing a substrate atop a substrate support disposed beneath a processing volume of a process chamber having a grounded shield surrounding the process volume and a conductive cover ring selectably supportable by the grounded shield; positioning the substrate support in a first position such that the substrate support is not in contact with the conductive cover ring and such that a conductive member electrically coupled to the cover ring contacts the grounded shield to electrically couple the cover ring to the grounded shield; and performing a plasma enhanced etch process on the substrate.

    Abstract translation: 本文提供了处理基板的方法。 在一些实施例中，用于处理衬底的方法可以包括将衬底放置在衬底支撑件的顶部，该衬底支撑件设置在具有围绕处理体积的接地屏蔽的处理室的处理容积下方，以及可选择地由接地屏蔽支撑的导电覆盖环; 将基板支撑件定位在第一位置，使得基板支撑件不与导电盖环接触，并且使得电耦合到盖环的导电构件接触接地屏蔽，以将盖环电耦合到接地屏蔽件; 以及在衬底上执行等离子体增强蚀刻工艺。

    Methods for reducing material overhang in a feature of a substrate
    9.
    发明授权
    Methods for reducing material overhang in a feature of a substrate 有权

    公开(公告)号：US11162170B2

    公开(公告)日：2021-11-02

    申请号：US14599831

    申请日：2015-01-19

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Alan A. Ritchie ,  Zhenbin Ge ,  Jenn Yue Wang ,  Sally Lou

    IPC: C23C14/58 ,  C23C14/34 ,  H01J37/34

    Abstract: Embodiments of methods for depositing material in features of a substrate have been provided herein. In some embodiments, a method for depositing material in a feature of a substrate includes depositing a material in a feature of a substrate disposed in a process chamber by sputtering a target using a plasma formed from a first gas; and etching the deposited material in the process chamber using a plasma formed from a second gas, different than the first gas, to at least partially reduce overhang of the material in the feature, wherein an atomic mass of the second gas is greater than an atomic mass of the first gas.

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