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    HIGH EFFICIENCY INDUCTIVELY COUPLED PLASMA SOURCE WITH CUSTOMIZED RF SHIELD FOR PLASMA PROFILE CONTROL
    2.
    发明申请
    HIGH EFFICIENCY INDUCTIVELY COUPLED PLASMA SOURCE WITH CUSTOMIZED RF SHIELD FOR PLASMA PROFILE CONTROL 有权
    高效电感耦合等离子体源，具有自定义射频屏蔽等离子体配置文件控制

    公开(公告)号：US20150191823A1

    公开(公告)日：2015-07-09

    申请号：US14572149

    申请日：2014-12-16

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Samer Banna ,  Vladimir Knyazik ,  Waheb Bishara ,  Valentin Todorow

    IPC: C23C16/505 ,  H05B6/02 ,  C23C16/46

    CPC classification number: C23C16/505 ,  C23C16/46 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/32522 ,  H01J37/32651 ,  H05B6/02 ,  H05B6/62

    Abstract: Apparatus for processing substrates are provided herein. In some embodiments, a plasma processing apparatus may include a process chamber having a dielectric lid and an interior processing volume beneath the dielectric lid, a first RF coil to couple RF energy into the processing volume, and an RF shielded lid heater coupled to a top surface of the dielectric lid comprising an annular member, and a plurality of spokes, wherein each of the plurality of spokes includes one of (a) a first portion that extends downward from the annular and couples the annular member to a second portion of the spoke that extends radially inward, or (b) a first portion that extends radially outward from the annular member.

    Abstract translation: 本文提供了处理基板的设备。 在一些实施例中，等离子体处理装置可以包括具有电介质盖和介电盖下面的内部处理体积的处理室，将RF能量耦合到处理容积中的第一RF线圈和耦合到顶部的RF屏蔽盖加热器 所述电介质盖的表面包括环形构件和多个辐条，其中所述多个辐条中的每一个包括（a）从所述环形物向下延伸并将所述环形构件连接到所述辐条的第二部分的第一部分中的一个 其径向向内延伸，或（b）从环形构件径向向外延伸的第一部分。

    Extended and independent RF powered cathode substrate for extreme edge tunability
    3.
    发明授权
    Extended and independent RF powered cathode substrate for extreme edge tunability 有权
    扩展和独立的RF供电阴极基板，用于极端边缘可调性

    公开(公告)号：US08988848B2

    公开(公告)日：2015-03-24

    申请号：US13651351

    申请日：2012-10-12

    Applicant: Applied Materials, Inc.

    Inventor： Valentin Todorow ,  Samer Banna ,  Imad Yousif ,  Albert Wang ,  Gary Leray

    IPC: H01L21/683 ,  H02N13/00 ,  H01J37/32

    CPC classification number: H01L21/6833 ,  H01J37/32642 ,  H01J37/32715 ,  H01L21/6831 ,  H02N13/00 ,  Y10T279/23

    Abstract: Apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate may include a substrate support comprising a first electrode disposed within the substrate support and having a peripheral edge and a first surface; a substrate support surface disposed above the first surface of the first electrode; and a second electrode disposed within the substrate support and extending radially beyond the peripheral edge of the first electrode, wherein the second electrode has a second surface disposed about and above the first surface of the first electrode.

    Abstract translation: 本文提供了处理基板的设备。 在一些实施例中，用于处理衬底的设备可以包括衬底支撑件，其包括设置在衬底支撑件内并且具有周边边缘和第一表面的第一电极; 设置在第一电极的第一表面上方的衬底支撑表面; 以及第二电极，其设置在所述基板支撑件内并且径向延伸超过所述第一电极的周边边缘，其中所述第二电极具有设置在所述第一电极的第一表面周围和上方的第二表面。

    Inductively coupled plasma source with phase control
    4.
    发明授权
    Inductively coupled plasma source with phase control 有权
    具有相位控制的电感耦合等离子体源

    公开(公告)号：US08933628B2

    公开(公告)日：2015-01-13

    申请号：US13650835

    申请日：2012-10-12

    Applicant: Applied Materials, Inc.

    Inventor： Samer Banna ,  Zhigang Chen ,  Valentin Todorow

    IPC: H01J7/24 ,  H05H1/46 ,  C23F1/08 ,  H01J37/32

    CPC classification number: H05H1/46 ,  C23F1/08 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32174 ,  H05H2001/4667

    Abstract: A plasma processing apparatus may include a process chamber having an interior processing volume; a first RF coil to couple RF energy into the processing volume; a second RF coil to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil; and a third RF coil to couple RF energy into the processing volume, the third RF coil disposed coaxially with respect to the first RF coil, wherein when RF current flows through the each of the RF coils, either the RF current flows out-of-phase through at least one of the RF coils with respect to at least another of the RF coils, or the phase of the RF current may be selectively controlled to be in-phase or out-of-phase in at least one of the RF coils with respect to at least another of the RF coils.

    Abstract translation: 等离子体处理装置可以包括具有内部处理量的处理室; 将RF能量耦合到处理量的第一RF线圈; 第二RF线圈，用于将RF能量耦合到所述处理容积中，所述第二RF线圈相对于所述第一RF线圈同轴布置; 以及第三RF线圈，用于将RF能量耦合到所述处理容积中，所述第三RF线圈相对于所述第一RF线圈同轴设置，其中当RF电流流过所述每个所述RF线圈时，所述RF电流流出， 相对于至少另一个RF线圈的RF线圈中的至少一个相位，或RF电流的相位可以被选择性地控制为在至少一个RF线圈中是同相或异相 相对于至少另一个RF线圈。

    High efficiency triple-coil inductively coupled plasma source with phase control
    6.
    发明授权
    High efficiency triple-coil inductively coupled plasma source with phase control 有权

    公开(公告)号：US10271416B2

    公开(公告)日：2019-04-23

    申请号：US13657232

    申请日：2012-10-22

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Samer Banna ,  Waheb Bishara ,  Ryan Giar ,  Valentin Todorow ,  Dmitry Lubomirsky ,  Kyle R. Tantiwong

    IPC: H05H1/46

    Abstract: A plasma processing apparatus may include a process chamber having an interior processing volume, first, second and third RF coils disposed proximate the process chamber to couple RF energy into the processing volume, wherein the second RF coil disposed coaxially with respect to the first RF coil, and wherein the third RF coil disposed coaxially with respect to the first and second RF coils, at least one ferrite shield disposed proximate to at least one of the first, second or third RF coils, wherein the ferrite shield is configured to locally guide a magnetic field produced by an RF current flow through the first, second or third RF coils toward the process chamber, wherein the plasma processing apparatus is configured to control a phase of each RF current flow through each of the of the first, second or third RF coils.

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