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公开(公告)号：US11678589B2
公开(公告)日：2023-06-13
申请号：US17178188
申请日：2021-02-17
Applicant: Applied Materials, Inc.
Inventor： Zihao Yang , Mingwei Zhu , Shriram Mangipudi , Mohammad Kamruzzaman Chowdhury , Shane Lavan , Zhebo Chen , Yong Cao , Nag B. Patibandla
CPC classification number: H01L39/2416 , H01L39/2406
Abstract: A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.
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公开(公告)号：US12142478B2
公开(公告)日：2024-11-12
申请号：US17902357
申请日：2022-09-02
Applicant: Applied Materials, Inc.
Inventor： Chunming Zhou , Jothilingam Ramalingam , Yong Cao , Kevin Vincent Moraes , Shane Lavan
IPC: H01L21/02 , H01L21/677
Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to deposit a film layer on the backside of the substrate. In another embodiment, an apparatus for depositing a backside film layer on a backside of a substrate, which includes a substrate supporting surface configured to support the substrate at or near the periphery of the substrate supporting surface without contacting an active region on a front side of the substrate.
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公开(公告)号：US12052935B2
公开(公告)日：2024-07-30
申请号：US17178190
申请日：2021-02-17
Applicant: Applied Materials, Inc.
Inventor： Zihao Yang , Mingwei Zhu , Shriram Mangipudi , Mohammad Kamruzzaman Chowdhury , Shane Lavan , Zhebo Chen , Yong Cao , Nag B. Patibandla
IPC: H10N60/01
CPC classification number: H10N60/0241 , H10N60/0156
Abstract: A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate at a first temperature, the seed layer being a nitride of a first metal, reducing the temperature of the substrate to a second temperature that is lower than the first temperature, increasing the temperature of the substrate to a third temperature that is higher than the first temperature to form a modified seed layer, and depositing a metal nitride superconductive layer directly on the modified seed layer at the third temperature, the superconductive layer being a nitride of a different second metal.
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公开(公告)号：US12027354B2
公开(公告)日：2024-07-02
申请号：US17861421
申请日：2022-07-11
Applicant: Applied Materials, Inc.
Inventor： Jothilingam Ramalingam , Yong Cao , Ilya Lavitsky , Keith A. Miller , Tza-Jing Gung , Xianmin Tang , Shane Lavan , Randy D Schmieding , John C. Forster , Kirankumar Neelasandra Savandaiah
CPC classification number: H01J37/3488 , C23C14/54 , C23C14/564 , H01J37/32357 , H01J37/32862 , H01J37/3435 , H01J37/3441 , H01J37/3447 , H01J37/32091
Abstract: A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.
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公开(公告)号：US11572618B2
公开(公告)日：2023-02-07
申请号：US17003969
申请日：2020-08-26
Applicant: Applied Materials, Inc.
Inventor： Jothilingam Ramalingam , Xiaozhou Che , Yong Cao , Shane Lavan , Chunming Zhou
Abstract: A method of depositing a backside film layer on a backside of a substrate includes loading a substrate having one or more films deposited on a front side of the substrate onto a substrate support of a processing chamber, depositing, from the sputter target, a target material on the backside of the substrate to form a backside layer on the backside of the substrate, and applying an RF bias to an electrode disposed within the substrate support while depositing the target material. The front side of the substrate faces the substrate support and is spaced from a top surface of the substrate support, and a backside of the substrate faces a sputter target of the processing chamber.
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公开(公告)号：US20220415636A1
公开(公告)日：2022-12-29
申请号：US17362925
申请日：2021-06-29
Applicant: Applied Materials, Inc.
Inventor： Jothilingam Ramalingam , Yong Cao , Ilya Lavitsky , Keith A. Miller , Tza-Jing Gung , Xianmin Tang , Shane Lavan , Randy D. Schmieding , John C. Forster , Kirankumar Neelasandra Savandaiah
Abstract: A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.
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公开(公告)号：US11469096B2
公开(公告)日：2022-10-11
申请号：US16847455
申请日：2020-04-13
Applicant: Applied Materials, Inc.
Inventor： Chunming Zhou , Jothilingam Ramalingam , Yong Cao , Kevin Vincent Moraes , Shane Lavan
IPC: H01L21/02 , H01L21/677
Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to deposit a film layer on the backside of the substrate. In another embodiment, an apparatus for depositing a backside film layer on a backside of a substrate, which includes a substrate supporting surface configured to support the substrate at or near the periphery of the substrate supporting surface without contacting an active region on a front side of the substrate.
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公开(公告)号：US20220013708A1
公开(公告)日：2022-01-13
申请号：US17178190
申请日：2021-02-17
Applicant: Applied Materials, Inc.
Inventor： Zihao Yang , Mingwei Zhu , Shriram Mangipudi , Mohammad Kamruzzaman Chowdhury , Shane Lavan , Zhebo Chen , Yong Cao , Nag B. Patibandla
IPC: H01L39/24
Abstract: A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate at a first temperature, the seed layer being a nitride of a first metal, reducing the temperature of the substrate to a second temperature that is lower than the first temperature, increasing the temperature of the substrate to a third temperature that is higher than the first temperature to form a modified seed layer, and depositing a metal nitride superconductive layer directly on the modified seed layer at the third temperature, the superconductive layer being a nitride of a different second metal.
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9.发明授权
公开(公告)号：US12183560B2
公开(公告)日：2024-12-31
申请号：US18109130
申请日：2023-02-13
Applicant: Applied Materials, Inc.
Inventor： Kirankumar Neelasandra Savandaiah , Shane Lavan , Sundarapandian Ramalinga Vijayalakshmi Reddy , Randal Dean Schmieding , Yong Cao
Abstract: Embodiments of process shield for use in process chambers are provided herein. In some embodiments, a process shield for use in a process chamber includes: an annular body having an upper portion and a lower portion extending downward and radially inward from the upper portion, wherein the upper portion includes a plurality of annular trenches on an upper surface thereof and having a plurality of slots disposed therebetween to fluidly couple the plurality of annular trenches, wherein one or more inlets extend from an outer surface of the annular body to an outermost trench of the plurality of annular trenches.
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公开(公告)号：US12176205B2
公开(公告)日：2024-12-24
申请号：US18337319
申请日：2023-06-19
Applicant: Applied Materials, Inc.
Inventor： Chunming Zhou , Jothilingam Ramalingam , Yong Cao , Kevin Vincent Moraes , Shane Lavan
IPC: H01L21/02 , H01L21/677
Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to deposit a film layer on the backside of the substrate. In another embodiment, an apparatus for depositing a backside film layer on a backside of a substrate, which includes a substrate supporting surface configured to support the substrate at or near the periphery of the substrate supporting surface without contacting an active region on a front side of the substrate.
