公开(公告)号：US12125689B2

公开(公告)日：2024-10-22

申请号：US17940513

申请日：2022-09-08

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Andrew Nguyen ,  Yang Yang ,  Sathya Ganta ,  Fernando Silveira ,  Yue Guo ,  Lu Liu

IPC: H01J37/32

CPC classification number: H01J37/32862 ,  H01J37/32082 ,  H01J2237/334

Abstract: Methods and apparatus for forming plasma in a process chamber use an annular exciter formed of a first conductive material with a first end electrically connected to an RF power source that provides RF current and a second end connected to a ground and an annular applicator, physically separated from the annular exciter, formed of a second conductive material with at least one angular split with an angle forming an upper overlap portion and a lower overlap portion separated by a high K dielectric material which is configured to provide capacitance in conjunction with an inductance of the annular applicator to form a resonant circuit that is configured to resonate when the annular exciter flows RF current that inductively excites the annular applicator to a resonant frequency which forms azimuthal plasma from the annular applicator.