公开(公告)号：US20210087677A1

公开(公告)日：2021-03-25

申请号：US17028156

申请日：2020-09-22

Applicant: Applied Materials, Inc.

Inventor： Keith T. Wong ,  HyoJin Kim

IPC: C23C16/30 ,  C23C16/02 ,  C23C16/56 ,  C23C16/455 ,  H01L27/108

Abstract: Methods of depositing a molybdenum sulfide film with increased sulfur:molybdenum ratio are described. The methods include pre-cleaning a dielectric material with oxygen radicals prior to formation of a molybdenum sulfide film that has a lower oxygen content than would be formed without the pre-cleaning.

公开(公告)号：US11821079B2

公开(公告)日：2023-11-21

申请号：US17028156

申请日：2020-09-22

Applicant: Applied Materials, Inc.

Inventor： Keith T. Wong ,  HyoJin Kim

IPC: C23C16/30 ,  C23C16/02 ,  C23C16/455 ,  C23C16/56 ,  H10B12/00

CPC classification number: C23C16/305 ,  C23C16/0227 ,  C23C16/45553 ,  C23C16/56 ,  H10B12/00

Abstract: Methods of depositing a molybdenum sulfide film with increased sulfur:molybdenum ratio are described. The methods include pre-cleaning a dielectric material with oxygen radicals prior to formation of a molybdenum sulfide film that has a lower oxygen content than would be formed without the pre-cleaning.