公开(公告)号：US20210191286A1

公开(公告)日：2021-06-24

申请号：US17111050

申请日：2020-12-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Jasper MENGER ,  Paul Cornelis Hubertus ABEN ,  Everhardus Cornelis MOS

IPC: G03F9/00

Abstract: Offline metrology measurements are performed on substrates that have been subjected to lithographic processing. Model parameters are calculated by fitting the measurements to an extended high-order substrate model defined using a combination of basis functions that include an edge basis function related to a substrate edge. A radial edge basis function may be expressed in terms of distance from a substrate edge. The edge basis function may, for example, be an exponential decay function or a rational function. Lithographic processing of a subsequent substrate is controlled using the calculated high-order substrate model parameters, in combination with low-order substrate model parameters obtained by fitting inline measurements to a low order model.

公开(公告)号：US20190278188A1

公开(公告)日：2019-09-12

申请号：US16351873

申请日：2019-03-13

Applicant: ASML Netherlands B.V.

Inventor： Alexander YPMA ,  Jasper MENGER ,  David DECKERS ,  David HAN ,  Adrianus Cornelis Matheus KOOPMAN ,  Irina LYULINA ,  Scott Anderson MIDDLEBROOKS ,  Richard Johannes Franciscus VAN HAREN ,  Jochem Sebastiaan WILDENBERG

IPC: G03F7/20 ,  G06F16/26 ,  G03F9/00

Abstract: In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in the multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.

公开(公告)号：US20220326623A1

公开(公告)日：2022-10-13

申请号：US17836099

申请日：2022-06-09

Applicant: ASML Netherlands B.V.

Inventor： Alexander YPMA ,  Jasper MENGER ,  David DECKERS ,  David HAN ,  Adrianus Cornelis Matheus KOOPMAN ,  Irina LYULINA ,  Scott Anderson MIDDLEBROOKS ,  Richard Johannes Franciscus VAN HAREN ,  Jochem Sebastiaan WILDENBERG

IPC: G03F7/20

Abstract: In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in the multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.

公开(公告)号：US20170277045A1

公开(公告)日：2017-09-28

申请号：US15528693

申请日：2015-11-12

Applicant: ASML NETHERLANDS B.V.

Inventor： Jasper MENGER ,  Paul Cornelis Hubertus ABEN ,  Everhardus Cornelis MOS

IPC: G03F9/00

CPC classification number: G03F9/7046

Abstract: Metrology measurements are performed on substrates that have been subjected to lithographic processing. Model parameters are calculated by fitting the measurements to an extended high-order substrate model defined using a combination of basis functions that include an edge basis function related to a substrate edge. A radial edge basis function may be expressed in terms of distance from a substrate edge. The edge basis function may, for example, be an exponential decay function or a rational function. Lithographic processing of a subsequent substrate is controlled using the calculated high-order substrate model parameters, in combination with low-order substrate model parameters obtained by fitting inline measurements to a low order model.

公开(公告)号：US20200264520A1

公开(公告)日：2020-08-20

申请号：US16864456

申请日：2020-05-01

Applicant: ASML Netherlands B.V.

Inventor： Alexander YPMA ,  Jasper MENGER ,  David DECKERS ,  David HAN ,  Adrianus Cornelis Matheus KOOPMAN ,  Irina LYULINA ,  Scott Anderson MIDDLEBROOKS ,  Richard Johannes Franciscu VAN HAREN ,  Jochem Sebastiaan WILDENBERG

IPC: G03F7/20 ,  G03F9/00 ,  G06F16/26

Abstract: In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in the multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.

公开(公告)号：US20200057395A1

公开(公告)日：2020-02-20

申请号：US16665022

申请日：2019-10-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Jasper MENGER ,  Paul Cornelis Hubertus Aben ,  Everhardus Cornelis Mos

IPC: G03F9/00

Abstract: Offline metrology measurements are performed on substrates that have been subjected to lithographic processing. Model parameters are calculated by fitting the measurements to an extended high-order substrate model defined using a combination of basis functions that include an edge basis function related to a substrate edge. A radial edge basis function may be expressed in terms of distance from a substrate edge. The edge basis function may, for example, be an exponential decay function or a rational function. Lithographic processing of a subsequent substrate is controlled using the calculated high-order substrate model parameters, in combination with low-order substrate model parameters obtained by fitting inline measurements to a low order model.