-
公开(公告)号：US11442368B2
公开(公告)日：2022-09-13
申请号：US17051287
申请日：2019-04-05
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Quintanilha , Scott Anderson Middlebrooks , Adrianus Cornelis Matheus Koopman , Albertus Victor Gerardus Mangnus
Abstract: A method of determining a measurement sequence for an inspection tool inspecting a structure generated by a lithographic process performed by a lithographic system is presented, the method including deriving a model for the lithographic process as performed by the lithographic system, the model including a relationship between a set of system variables describing the lithographic system and an output variable representing the structure resulting of the lithographic process, determining an observability of one or more system variables in the output variable, and determining the measurement sequence for the inspection tool, based on the observability.
-
2.发明授权公开(公告)号：US11385550B2
公开(公告)日：2022-07-12
申请号：US16864456
申请日：2020-05-01
Applicant: ASML Netherlands B.V.
Inventor： Alexander Ypma , Jasper Menger , David Deckers , David Han , Adrianus Cornelis Matheus Koopman , Irina Lyulina , Scott Anderson Middlebrooks , Richard Johannes Franciscus Van Haren , Jochem Sebastiaan Wildenberg
Abstract: In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in the multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.
-
公开(公告)号：US11119414B2
公开(公告)日：2021-09-14
申请号：US16851477
申请日：2020-04-17
Applicant: ASML Netherlands B.V.
Inventor： Scott Anderson Middlebrooks , Willem Maria Julia Marcel Coene , Frank Arnoldus Johannes Maria Driessen , Adrianus Cornelis Matheus Koopman , Markus Gerardus Martinus Maria Van Kraaij
IPC: G06F15/18 , G03F7/20 , G06N20/00 , G06F30/367 , G06N7/00
Abstract: A defect prediction method for a device manufacturing process involving production substrates processed by a lithographic apparatus, the method including training a classification model using a training set including measured or determined values of a process parameter associated with the production substrates processed by the device manufacturing process and an indication regarding existence of defects associated with the production substrates processed in the device manufacturing process under the values of the process parameter, and producing an output from the classification model that indicates a prediction of a defect for a substrate.
-
公开(公告)号：US11067901B2
公开(公告)日：2021-07-20
申请号：US16464705
申请日：2017-11-29
Applicant: ASML NETHERLANDS B.V.
Inventor： Scott Anderson Middlebrooks , Adrianus Cornelis Matheus Koopman , Markus Gerardus Martinus Maria Van Kraaij , Maxim Pisarenco
Abstract: A method including: obtaining a logistic mathematical model predicting the formation of a physical structure created using a patterning process; evaluating the logistic mathematical model to predict formation of a part of the physical structure and generate an output; and adapting, based on the output, an aspect of the patterning process.
-
公开(公告)号：US10126662B2
公开(公告)日：2018-11-13
申请号：US15912036
申请日：2018-03-05
Applicant: ASML Netherlands B.V.
Inventor： Scott Anderson Middlebrooks , Niels Geypen , Hendrik Jan Hidde Smilde , Alexander Straaijer , Maurits Van Der Schaar , Markus Gerardus Martinus Maria Van Kraaij
IPC: G03F7/20
Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.
-
Patent Agency Ranking
公开(公告)号：US09470986B2
公开(公告)日：2016-10-18
申请号：US14190036
申请日：2014-02-25
Applicant: ASML Netherlands B.V.
Inventor： Andreas Fuchs , Maurits Van Der Schaar , Scott Anderson Middlebrooks , Panagiotis Pieter Bintevinos
IPC: G03F7/20 , G01N21/956
CPC classification number: G03F7/70633 , G01N21/956
Abstract: A method for determining overlay error includes measuring asymmetry of radiation reflected from each of a plurality of targets on a substrate. The plurality of targets include a predetermined overlay offset. The method also includes comparing the measured asymmetry of the radiation reflected from each of the plurality of targets to the corresponding predetermined overlay offset of the respective target. Additionally, the method includes determining the overlay error of a point on the substrate as a function of measured asymmetry reflected from the point. The function is determined by fitting a polynomial or a Fourier series to a comparison of the measured asymmetry of the radiation reflected from each of the plurality of targets to the corresponding predetermined overlay offset of the respective target. The function limits an effect of linearity error.
Abstract translation: 用于确定覆盖误差的方法包括测量从衬底上的多个靶中的每一个反射的辐射的不对称性。 多个目标包括预定的覆盖偏移。 该方法还包括将从多个目标中的每一个反射的辐射的测量的不对称性与相应目标的对应的预定叠加偏移进行比较。 另外，该方法包括根据从该点反射的测量的不对称性来确定衬底上的点的重叠误差。 通过将多项式或傅里叶级数拟合到从多个目标中的每一个反射的辐射的测量的不对称与相应目标的对应的预定叠加偏移的比较来确定该功能。 该功能限制了线性误差的影响。
-
7.发明授权公开(公告)号：US11940740B2
公开(公告)日：2024-03-26
申请号：US17836099
申请日：2022-06-09
Applicant: ASML Netherlands B.V.
Inventor： Alexander Ypma , Jasper Menger , David Deckers , David Han , Adrianus Cornelis Matheus Koopman , Irina Lyulina , Scott Anderson Middlebrooks , Richard Johannes Franciscus Van Haren , Jochem Sebastiaan Wildenberg
CPC classification number: G03F7/706837 , G03F7/70525 , G03F7/70616 , G03F9/7092 , G06F16/26
Abstract: In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in the multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.
-
公开(公告)号：US11880640B2
公开(公告)日：2024-01-23
申请号：US18118657
申请日：2023-03-07
Applicant: ASML NETHERLANDS B.V.
IPC: G06F7/50 , G06F30/28 , G03F7/00 , G06F119/14
CPC classification number: G06F30/28 , G03F7/705 , G06F2119/14
Abstract: A method involving obtaining a resist deformation model for simulating a deformation process of a pattern in resist, the resist deformation model being a fluid dynamics model configured to simulate an intrafluid force acting on the resist, performing, using the resist deformation model, a computer simulation of the deformation process to obtain a deformation of the developed resist pattern for an input pattern to the resist deformation model, and producing electronic data representing the deformation of the developed resist pattern for the input pattern.
-
公开(公告)号：US11131936B2
公开(公告)日：2021-09-28
申请号：US16486169
申请日：2018-02-07
Applicant: ASML NETHERLANDS B.V.
IPC: G03F7/00 , G03F7/20 , G01N21/95 , G01N21/956 , G06K9/32
Abstract: Methods of measuring variation across multiple instances of a pattern on a substrate or substrates after a step in a device manufacturing process are disclosed. In one arrangement, data representing a set of images is received. Each image represents a different instance of the pattern, wherein the pattern includes a plurality of pattern elements. The set of images are registered relative to each other to superimpose the instances of the pattern. The registration includes applying different weightings to two or more of the plurality of pattern elements, wherein the weightings control the extent to which each pattern element contributes to the registration of the set of images and each weighting is based on an expected variation of the pattern element to which the weighting is applied. Variation in the pattern is measured using the registered set of images.
-
公开(公告)号：US10852646B2
公开(公告)日：2020-12-01
申请号：US16300314
申请日：2017-04-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Marinus Jochemsen , Scott Anderson Middlebrooks , Stefan Hunsche , Te-Sheng Wang
IPC: G03F7/20
Abstract: A method including obtaining an image of a plurality of structures on a substrate, wherein each of the plurality of structures is formed onto the substrate by transferring a corresponding pattern of a design layout; obtaining, from the image, a displacement for each of the structures with respect to a reference point for that structure; and assigning each of the structures into one of a plurality of groups based on the displacement.
-
-
-
-
-
-
-
-
-
Search Results
38
records
(took 0.025 seconds)
