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    METHODS OF DETERMINING SCATTERING OF RADIATION BY STRUCTURES OF FINITE THICKNESSES ON A PATTERNING DEVICE
    1.
    发明申请
    METHODS OF DETERMINING SCATTERING OF RADIATION BY STRUCTURES OF FINITE THICKNESSES ON A PATTERNING DEVICE 审中-公开

    公开(公告)号：US20200012196A1

    公开(公告)日：2020-01-09

    申请号：US16483452

    申请日：2018-02-13

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Peng LIU ,  Ya LUO ,  Yu CAO ,  Yen-Wen LU

    IPC: G03F7/20 ,  G06N3/08 ,  G06F17/50

    Abstract: A method including: obtaining a characteristic of a portion of a design layout; determining a characteristic of M3D of a patterning device including or forming the portion; and training, by a computer, a neural network using training data including a sample whose feature vector includes the characteristic of the portion and whose supervisory signal includes the characteristic of the M3D. Also disclosed is a method including: obtaining a characteristic of a portion of a design layout; obtaining a characteristic of a lithographic process that uses a patterning device including or forming the portion; determining a characteristic of a result of the lithographic process; training, by a computer, a neural network using training data including a sample whose feature vector includes the characteristic of the portion and the characteristic of the lithographic process, and whose supervisory signal includes the characteristic of the result.

    METHOD AND APPARATUS FOR CONTROLLING A COMPUTING PROCESS
    2.
    发明申请
    METHOD AND APPARATUS FOR CONTROLLING A COMPUTING PROCESS 有权

    公开(公告)号：US20220283511A1

    公开(公告)日：2022-09-08

    申请号：US17751110

    申请日：2022-05-23

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Yen-Wen LU ,  Xiaorui CHEN ,  Yang LIN

    IPC: G03F7/20 ,  G05B19/418

    Abstract: A method of controlling a computer process for designing or verifying a photolithographic component, the method including building a source tree including nodes of the process, including dependency relationships among the nodes, defining, for some nodes, at least two different process conditions, expanding the source tree to form an expanded tree, including generating a separate node for each different defined process condition, and duplicating dependent nodes having an input relationship to each generated separate node, determining respective computing hardware requirements for processing the node, selecting computer hardware constraints based on capabilities of the host computing system, determining, based on the requirements and constraints and on dependency relations in the expanded tree, an execution sequence for the computer process, and performing the computer process on the computing system.

    METHODS OF DETERMINING SCATTERING OF RADIATION BY STRUCTURES OF FINITE THICKNESSES ON A PATTERNING DEVICE
    3.
    发明申请
    METHODS OF DETERMINING SCATTERING OF RADIATION BY STRUCTURES OF FINITE THICKNESSES ON A PATTERNING DEVICE 审中-公开

    公开(公告)号：US20200073260A1

    公开(公告)日：2020-03-05

    申请号：US16467124

    申请日：2017-12-06

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Yu CAO ,  Yen-Wen LU ,  Peng LIU ,  Rafael C. HOWELL

    IPC: G03F7/20

    Abstract: A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function represents a continuous transmission mask and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.

    PROCESS WINDOW IDENTIFIER
    4.
    发明申请
    PROCESS WINDOW IDENTIFIER 有权
    过程窗口标识符

    公开(公告)号：US20160085905A1

    公开(公告)日：2016-03-24

    申请号：US14861847

    申请日：2015-09-22

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Frank Gang CHEN ,  Joseph Werner DE VOCHT ,  Yuelin DU ,  Wanyu LI ,  Yen-Wen LU

    IPC: G06F17/50

    CPC classification number: G06F17/5081 ,  G03F7/705 ,  G03F7/70508 ,  G03F7/70625 ,  G03F7/70641 ,  G03F7/70666

    Abstract: Disclosed herein is a computer-implemented method for determining an overlapping process window (OPW) of an area of interest on a portion of a design layout for a device manufacturing process for imaging the portion onto a substrate, the method comprising: obtaining a plurality of features in the area of interest; obtaining a plurality of values of one or more processing parameters of the device manufacturing process; determining existence of defects, probability of the existence of defects, or both in imaging the plurality of features by the device manufacturing process under each of the plurality of values; and determining the OPW of the area of interest from the existence of defects, the probability of the existence of defects, or both.

    Abstract translation: 本文公开了一种计算机实现的方法，用于确定用于将部分成像到衬底上的器件制造工艺的设计布局的一部分上的感兴趣区域的重叠处理窗口（OPW），该方法包括：获得多个 特征在感兴趣的领域; 获得装置制造过程的一个或多个处理参数的多个值; 通过在多个值中的每一个值下的设备制造过程来确定存在缺陷，存在缺陷的概率或二者成像多个特征; 从缺陷的存在，存在缺陷的概率或两者确定感兴趣区域的OPW。

    METHOD FOR IMPROVING CONSISTENCY IN MASK PATTERN GENERATION
    6.
    发明申请
    METHOD FOR IMPROVING CONSISTENCY IN MASK PATTERN GENERATION 有权

    公开(公告)号：US20230044490A1

    公开(公告)日：2023-02-09

    申请号：US17782741

    申请日：2020-11-21

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Quan ZHANG ,  Tatung CHOW ,  Been-Der CHEN ,  Yen-Wen LU

    IPC: G03F1/70 ,  G06N3/08 ,  G06N3/04

    Abstract: A method of determining a mask pattern for a target pattern to be printed on a substrate. The method includes partitioning a portion of a design layout including the target pattern into a plurality of cells with reference to a given location on the target pattern; assigning a plurality of variables within a particular cell of the plurality of cells, the particular cell including the target pattern or a portion thereof; and determining, based on values of the plurality of variables, the mask pattern for the target pattern such that a performance metric of a patterning process utilizing the mask pattern is within a desired performance range.

    METHOD FOR IMPROVING A PROCESS FOR A PATTERNING PROCESS
    7.
    发明申请
    METHOD FOR IMPROVING A PROCESS FOR A PATTERNING PROCESS 有权

    公开(公告)号：US20210208507A1

    公开(公告)日：2021-07-08

    申请号：US17059771

    申请日：2019-05-14

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Jen-Shiang WANG ,  Qian Zhao ,  Yunbo GUO ,  Yen-Wen LU ,  Mu FENG ,  Qiang ZHANG

    IPC: G03F7/20

    Abstract: A method for improving a process model for a patterning process, the method including obtaining a) a measured contour from an image capture device, and b) a simulated contour generated from a simulation of the process model. The method also includes aligning the measured contour with the simulated contour by determining an offset between the measured contour and the simulated contour. The process model is calibrated to reduce a difference, computed based on the determined offset, between the simulated contour and the measured contour.

    FEATURE SEARCH BY MACHINE LEARNING
    8.
    发明申请
    FEATURE SEARCH BY MACHINE LEARNING 审中-公开

    公开(公告)号：US20170357911A1

    公开(公告)日：2017-12-14

    申请号：US15531321

    申请日：2015-11-18

    Applicant: ASML Netherlands B.V.

    Inventor： Xiaofeng LIU ,  Yen-Wen LU

    IPC: G06N99/00 ,  G03F7/20 ,  G06F17/50

    CPC classification number: G06N20/00 ,  G03F1/36 ,  G03F7/70 ,  G03F7/70125 ,  G03F7/70441 ,  G03F7/705 ,  G06F17/5068 ,  G06F17/5081

    Abstract: A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus, the method including: obtaining a target feature; generating a perturbed target feature from the target feature by applying a perturbation thereto; generating a set of training examples includes the perturbed target feature and an indication as whether the perturbed target feature is deemed the same as the target feature; training a learning model with the set of training examples; classifying features in the portion of the design layout into at least two classes: being deemed the same as the target feature, and being deemed different from the target feature.

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