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公开(公告)号:US20240272543A1
公开(公告)日:2024-08-15
申请号:US18565889
申请日:2022-05-27
Applicant: ASML NETHERLANDS B.V.
Inventor: Wen LYU , Mir Farrokh SHAYEGAN SALEK , Xiaobo XIE , Jen-Shiang WANG
CPC classification number: G03F1/36 , G03F7/70441 , G03F7/705
Abstract: A methods and systems for determining rounded contours of target contours or other lithography related contour for mask design. The method includes converting a contour representation to (i) a first set of contour point locations in a first dimension (e.g., x) and (ii) a second set of contour point locations in a second dimension (e.g., y). A signal function is determined based on the first and second sets of contour point locations, the signal function indicative of different segments of the contour representation. The first set of contour point locations is updated based on a first filter function and the signal function, and the second set of contour point locations is updated based on a second filter function and the signal function. Based on the updated contour point locations, a rounded contour of the contour representation is generated.
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公开(公告)号:US20220276564A1
公开(公告)日:2022-09-01
申请号:US17632632
申请日:2020-07-29
Applicant: ASML NETHERLANDS B.V.
Inventor: Mir Farrokh SHAYEGAN SALEK , Rafael C. HOWELL , Yunan ZHENG , Haiqing WEI , Yu CAO
IPC: G03F7/20
Abstract: A method of simulating a pattern to be imaged onto a substrate using a photolithography system, the method includes obtaining a pattern to be imaged onto the substrate, smoothing the pattern, and simulating an image of the smoothed pattern. The smoothing may include application of a graphical low pass filter and the simulating may include application of edge filters from an edge filter library.
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公开(公告)号:US20180275521A1
公开(公告)日:2018-09-27
申请号:US15763387
申请日:2016-10-03
Applicant: ASML NETHERLANDS B.V.
Inventor: Thomas I. WALLOW , Peng-cheng YANG , Adam LYONS , Mir Farrokh SHAYEGAN SALEK , Hermanus Adrianus DILLEN
Abstract: A method including providing a plurality of unit cells for a plurality of gauge patterns appearing in one or more images of one or more patterning process substrates, each unit cell representing an instance of a gauge pattern of the plurality of gauge patterns, averaging together image information of each unit cell to arrive at a synthesized representation of the gauge pattern, and determining a geometric dimension of the gauge pattern based on the synthesized representation.
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