公开(公告)号：US20180364589A1

公开(公告)日：2018-12-20

申请号：US16061016

申请日：2016-11-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Jun CHEN ,  Thomas I. WALLOW ,  Bart LANENS ,  Yi-Hsing PENG

IPC: G03F7/20

CPC classification number: G03F7/70625 ,  G03F7/705

Abstract: A method including obtaining a plurality of gauges of a plurality of gauge patterns for a patterning process, each gauge pattern configured for measurement of a parameter of the patterning process when created as part of the patterning process, and creating a selection of one or more gauges from the plurality of gauges, wherein a gauge is included in the selection provided the gauge and all the other gauges, if any, of the same gauge pattern, or all of the one or more gauges of the same gauge pattern linked to the gauge, pass a gauge printability check.

公开(公告)号：US20220299881A1

公开(公告)日：2022-09-22

申请号：US17636103

申请日：2020-08-01

Applicant: ASML NETHERLANDS B.V.

Inventor： Yunan ZHENG ,  Yongfa FAN ,  Mu FENG ,  Leiwu ZHENG ,  Jen-Shiang WANG ,  Ya LUO ,  Chenji ZHANG ,  Jun CHEN ,  Zhenyu HOU ,  Jinze WANG ,  Feng CHEN ,  Ziyang MA ,  Xin GUO ,  Jin CHENG

IPC: G03F7/20

Abstract: A method for generating modified contours and/or generating metrology gauges based on the modified contours. A method of generating metrology gauges for measuring a physical characteristic of a structure on a substrate includes obtaining (i) measured data associated with the physical characteristic of the structure printed on the substrate, and (ii) at least portion of a simulated contour of the structure, the at least a portion of the simulated contour being associated with the measured data; modifying, based on the measured data, the at least a portion of the simulated contour of the structure; and generating the metrology gauges on or adjacent to the modified at least a portion of the simulated contour, the metrology gauges being placed to measure the physical characteristic of the simulated contour of the structure.

公开(公告)号：US20210263428A1

公开(公告)日：2021-08-26

申请号：US17261293

申请日：2019-07-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Jun CHEN

IPC: G03F7/20 ,  H01L21/66 ,  H01J37/28

Abstract: A method for calibrating a process model of a patterning process. The method includes identifying a portion of the substrate that has values within a tolerance band of one or more parameters (e.g., CD, EPE, etc.) of the patterning process, obtaining, via a metrology tool, metrology data corresponding to the portion of the substrate, processing the metrology data, and calibrating a process model based on the processed metrology data.