公开(公告)号：US20240385530A1

公开(公告)日：2024-11-21

申请号：US18565494

申请日：2022-05-29

Applicant: ASML NETHERLANDS B.V.

Inventor： Jiao HUANG ,  Jinze Wang ,  Yan YAN ,  Yongfa FAN ,  Liang Liu ,  Mu FENG

IPC: G03F7/00

Abstract: Etch bias is determined based on a curvature of a contour in a substrate pattern. The etch bias is configured to be used to enhance an accuracy of a semiconductor patterning process relative to prior patterning processes. In some embodiments, a representation of the substrate pattern is received, which includes the contour in the substrate pattern. The curvature of the contour of the substrate pattern is determined and inputted to a simulation model. The simulation model includes a correlation between etch biases and curvatures of contours. The etch bias for the contour in the substrate pattern is outputted by the simulation model based on the curvature.

公开(公告)号：US11314172B2

公开(公告)日：2022-04-26

申请号：US16977137

申请日：2019-03-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Hongfei Shi ,  Jinze Wang ,  Pengcheng Yang ,  Lei Wang ,  Mu Feng

IPC: G03F7/20

Abstract: A method for accelerating calibration of a fabrication process model, the method including performing one or more iterations of: defining one or more fabrication process model terms; receiving predetermined information related to the one or more fabrication process model terms; generating a fabrication process model based on the predetermined information, the fabrication process model configured to generate one or more predictions related to a metrology gauge; determining whether a prediction related to a dimension of a gauge is within a predetermined threshold of the gauge as measured on a post-fabrication process substrate; and responsive to the prediction not breaching the predetermined threshold, optimizing the one or more fabrication process terms such that the prediction related to the dimension of the gauge is within the predetermined threshold of the gauge as measured on the post-fabrication process substrate.