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公开(公告)号：US10908514B2
公开(公告)日：2021-02-02
申请号：US16562869
申请日：2019-09-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Janneke Ravensbergen , Duygu Akbulut , Nitesh Pandey , Jin Lian
Abstract: A metrology apparatus is disclosed that has an optical system to focus radiation onto a structure and directs redirected radiation from the structure to a detection system. The optical system applies a plurality of different offsets of an optical characteristic to radiation before and/or after redirected by the structure, such that a corresponding plurality of different offsets are provided to redirected radiation derived from a first point of a pupil plane field distribution relative to redirected radiation derived from a second point of the pupil plane field distribution. The detection system detects a corresponding plurality of radiation intensities resulting from interference between the redirected radiation derived from the first point of the pupil plane field distribution and the redirected radiation derived from the second point of the pupil plane field distribution. Each radiation intensity corresponds to a different one of the plurality of different offsets.
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公开(公告)号：US20190107785A1
公开(公告)日：2019-04-11
申请号：US16155424
申请日：2018-10-09
Applicant: ASML Netherlands B.V.
Inventor： Narjes JAVAHERI , Mohammadreza Hajiahmadi , Murat Bozkurt , Alberto Da Costa Assafrao , Marc Johannes Noot , Simon Gijsbert Josephus Mathijssen , Jin Lian
Abstract: Disclosed is a method, and associated apparatuses, for measuring a parameter of interest relating to a structure having at least two layers. The method comprises illuminating the structure with measurement radiation and detecting scattered radiation having been scattered by said structure. The scattered radiation comprises normal and complementary higher diffraction orders. A scatterometry model which relates a scattered radiation parameter to at least a parameter of interest and an asymmetry model which relates the scattered radiation parameter to at least one asymmetry parameter are defined, the asymmetry parameter relating to one or more measurement system errors and/or an asymmetry in the target other than a misalignment between the two layers. A combination of the scatterometry model and asymmetry model is used to determine a system of equations, and the system of equations is then solved for the parameter of interest.
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公开(公告)号：US11099489B2
公开(公告)日：2021-08-24
申请号：US16712862
申请日：2019-12-12
Applicant: ASML Netherlands B.V.
Inventor： Hugo Augustinus Joseph Cramer , Hilko Dirk Bos , Erik Johan Koop , Armand Eugene Albert Koolen , Han-Kwang Nienhuys , Alessandro Polo , Jin Lian , Arie Jeffrey Den Boef
IPC: G03F7/20 , G01N21/47 , G01N21/956 , G01N21/95
Abstract: The disclosure relates to measuring a parameter of a lithographic process and a metrology apparatus. In one arrangement, radiation from a radiation source is modified and used to illuminate a target formed on a substrate using the lithographic process. Radiation scattered from a target is detected and analyzing to determine the parameter. The modification of the radiation comprises modifying a wavelength spectrum of the radiation to have a local minimum between a global maximum and a local maximum, wherein the power spectral density of the radiation at the local minimum is less than 20% of the power spectral density of the radiation at the global maximum and the power spectral density of the radiation at the local maximum is at least 50% of the power spectral density of the radiation at the global maximum.
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4.发明授权公开(公告)号：US10656534B2
公开(公告)日：2020-05-19
申请号：US16428215
申请日：2019-05-31
Applicant: ASML NETHERLANDS B.V.
Inventor： Nitesh Pandey , Jin Lian , Samee Ur-Rehman , Martin Jacobus Johan Jak
Abstract: Methods and apparatuses for measuring a plurality of structures formed on a substrate are disclosed. In one arrangement, a method includes obtaining data from a first measurement process. The first measurement process including individually measuring each of the plurality of structures to measure a first property of the structure. A second measurement process is used to measure a second property of each of the plurality of structures. The second measurement process includes illuminating each structure with radiation having a radiation property that is individually selected for that structure using the measured first property for the structure.
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5.发明申请公开(公告)号：US20200089125A1
公开(公告)日：2020-03-19
申请号：US16556685
申请日：2019-08-30
Applicant: ASML Netherlands B.V.
Inventor： Sergei SOKOLOV , Jin Lian
IPC: G03F7/20
Abstract: Disclosed method of measuring a parameter relating to a structure formed using a lithographic process, and more specifically focus or line edge roughness. The method includes measuring a structure having a dimension, e.g., a critical dimension, which is sufficiently large to enable radiation diffracted by at least one edge of said structure to be (e.g., individually) optically resolved. The method comprises obtaining an intensity metric from an image of the at least one edge and determining a value for said parameter based on the intensity metric.
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Patent Agency Ranking
公开(公告)号：US10444640B2
公开(公告)日：2019-10-15
申请号：US16159080
申请日：2018-10-12
Applicant: ASML NETHERLANDS B.V.
Inventor： Janneke Ravensbergen , Duygu Akbulut , Nitesh Pandey , Jin Lian
Abstract: A metrology apparatus is disclosed that has an optical system to focus radiation onto a structure and directs redirected radiation from the structure to a detection system. The optical system applies a plurality of different offsets of an optical characteristic to radiation before and/or after redirected by the structure, such that a corresponding plurality of different offsets are provided to redirected radiation derived from a first point of a pupil plane field distribution relative to redirected radiation derived from a second point of the pupil plane field distribution. The detection system detects a corresponding plurality of radiation intensities resulting from interference between the redirected radiation derived from the first point of the pupil plane field distribution and the redirected radiation derived from the second point of the pupil plane field distribution. Each radiation intensity corresponds to a different one of the plurality of different offsets.
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公开(公告)号：US10705437B2
公开(公告)日：2020-07-07
申请号：US16155424
申请日：2018-10-09
Applicant: ASML Netherlands B.V.
Inventor： Narjes Javaheri , Mohammadreza Hajiahmadi , Murat Bozkurt , Alberto Da Costa Assafrao , Marc Johannes Noot , Simon Gijsbert Josephus Mathijssen , Jin Lian
IPC: G03F7/20 , G01N21/47 , G01B11/24 , G01B11/30 , H01L23/544
Abstract: Disclosed is a method, and associated apparatuses, for measuring a parameter of interest relating to a structure having at least two layers. The method comprises illuminating the structure with measurement radiation and detecting scattered radiation having been scattered by said structure. The scattered radiation comprises normal and complementary higher diffraction orders. A scatterometry model which relates a scattered radiation parameter to at least a parameter of interest and an asymmetry model which relates the scattered radiation parameter to at least one asymmetry parameter are defined, the asymmetry parameter relating to one or more measurement system errors and/or an asymmetry in the target other than a misalignment between the two layers. A combination of the scatterometry model and asymmetry model is used to determine a system of equations, and the system of equations is then solved for the parameter of interest.
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8.发明授权公开(公告)号：US10310389B2
公开(公告)日：2019-06-04
申请号：US15942423
申请日：2018-03-30
Applicant: ASML NETHERLANDS B.V.
Inventor： Nitesh Pandey , Jin Lian , Samee Ur Rehman , Martin Jacobus Johan Jak
Abstract: Methods and apparatuses for measuring a plurality of structures formed on a substrate are disclosed. In one arrangement, a method includes obtaining data from a first measurement process. The first measurement process including individually measuring each of the plurality of structures to measure a first property of the structure. A second measurement process is used to measure a second property of each of the plurality of structures. The second measurement process includes illuminating each structure with radiation having a radiation property that is individually selected for that structure using the measured first property for the structure.
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公开(公告)号：US11042100B2
公开(公告)日：2021-06-22
申请号：US16410250
申请日：2019-05-13
Applicant: ASML Netherlands B.V.
Inventor： Jin Lian , Zili Zhou , Duygu Akbulut , Sergey Tarabrin
IPC: G03F7/20
Abstract: The disclosure relates to measuring a target. In one arrangement, a measurement apparatus is provided that has an optical system configured to illuminate a target with radiation and direct reflected radiation from the target to a sensor. A programmable spatial light modulator in a pupil plane of the optical system is programmed to redirect light in each of a plurality of pupil plane zones in such a way as to form a corresponding plurality of images at different locations on the sensor. Each image is formed by radiation passing through a different respective one of the pupil plane zones.
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10.发明授权公开(公告)号：US10831107B2
公开(公告)日：2020-11-10
申请号：US16556685
申请日：2019-08-30
Applicant: ASML Netherlands B.V.
Inventor： Sergei Sokolov , Jin Lian
IPC: G03F7/20
Abstract: Disclosed method of measuring a parameter relating to a structure formed using a lithographic process, and more specifically focus or line edge roughness. The method includes measuring a structure having a dimension, e.g., a critical dimension, which is sufficiently large to enable radiation diffracted by at least one edge of said structure to be (e.g., individually) optically resolved. The method comprises obtaining an intensity metric from an image of the at least one edge and determining a value for said parameter based on the intensity metric.
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