公开(公告)号：US20140262763A1

公开(公告)日：2014-09-18

申请号：US13831363

申请日：2013-03-14

Applicant: APPLIED MATERIALS, INC.

Inventor： MUHAMMAD M. RASHEED ,  KIRANKUMAR SAVANDAIAH ,  WILLIAM JOHANSON ,  ZHENBIN GE ,  GOICHI YOSHIDOME

IPC: H01L21/67

CPC classification number: H01L21/68735 ,  C23C14/34 ,  C23C14/50 ,  H01J37/32651 ,  H01J37/32715

Abstract: Embodiments of a process kit for substrate process chambers are provided herein. In some embodiments, a process kit for a substrate process chamber may include a ring having a body and a lip extending radially inward from the body, wherein the body has a first annular channel formed in a bottom of the body; an annular conductive shield having a lower inwardly extending ledge that terminates in an upwardly extending portion configured to interface with the first annular channel of the ring; and a conductive member electrically coupling the ring to the conductive shield when the ring is disposed on the conductive shield.

Abstract translation: 本文提供了用于基板处理室的处理套件的实施例。 在一些实施例中，用于衬底处理室的处理套件可以包括具有本体和从主体径向向内延伸的唇缘的环，其中主体具有形成在主体的底部中的第一环形通道; 环形导电屏蔽件，其具有下部向内延伸的凸缘，其终止于构造成与环的第一环形通道相接合的向上延伸部分; 以及当所述环设置在所述导电屏蔽上时，所述导电构件将所述环电耦合到所述导电屏蔽层。

公开(公告)号：US20180294162A1

公开(公告)日：2018-10-11

申请号：US15482198

申请日：2017-04-07

Applicant: APPLIED MATERIALS, INC.

Inventor： XIANGJIN XIE ,  ADOLPH MILLER ALLEN ,  XIANMIN TANG ,  GOICHI YOSHIDOME

IPC: H01L21/285 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/3215 ,  H01L21/67 ,  H01L21/768 ,  H01L23/532 ,  C23C14/34 ,  C23C14/02 ,  C23C16/455 ,  C23C14/54

Abstract: Atomic layer deposition (ALD) processes are combined with physical vapor deposition (PVD) processes in a low pressure environment to produce a high quality barrier film. The initial barrier film is deposited on a substrate using ALD processes and then moved to a PVD chamber to treat the barrier film to increase the barrier film's density and purity, decreasing the barrier film's resistivity. A dual source of materials is sputtered onto the substrate to provide doping while a gas is simultaneously used to etch the substrate to release nitrogen. At least one source of material is positioned to provide doping at an acute angle to the surface of the substrate while supplied with DC power and RF power at a first RF power frequency. The substrate is biased using RF power at a second RF power frequency.

公开(公告)号：US20150075982A1

公开(公告)日：2015-03-19

申请号：US14483909

申请日：2014-09-11

Applicant: Applied Materials, Inc.

Inventor： GOICHI YOSHIDOME ,  FUHONG ZHANG

IPC: H01J37/34 ,  H01F38/00 ,  C23C14/35 ,  H01F7/02

CPC classification number: H01J37/3455 ,  C23C14/35 ,  H01F7/0273 ,  H01J37/3452

Abstract: A magnetic field forming apparatus includes a support member having a first side and a second side coupling a first end to a second end and an axis of rotation between the first end and the second end; a first body coupled to the first end of the support member and extending away from the first side of the support member, wherein the first body has a plurality of first magnets coupled to a bottom of the first body; a second body rotatably coupled to the second end of the support member and extending away from the second side of the support member, wherein the second body has a plurality of second magnets coupled to a bottom of the second body, wherein the plurality of the first magnets are disposed about 180 degrees from the plurality of second magnets with respect to the axis of rotation of the support member.

Abstract translation: 磁场形成装置包括：支撑构件，其具有将第一端与第二端和第一端与第二端之间的旋转轴线联接的第一侧和第二侧; 第一主体，其联接到所述支撑构件的第一端并且远离所述支撑构件的第一侧延伸，其中所述第一主体具有联接到所述第一主体的底部的多个第一磁体; 第二主体，其可旋转地联接到所述支撑构件的第二端并且远离所述支撑构件的第二侧延伸，其中所述第二主体具有联接到所述第二主体的底部的多个第二磁体，其中所述多个所述第一主体 磁体相对于支撑构件的旋转轴线从多个第二磁体设置为大约180度。

公开(公告)号：US20180142342A1

公开(公告)日：2018-05-24

申请号：US15814684

申请日：2017-11-16

Applicant: APPLIED MATERIALS, INC.

Inventor： GOICHI YOSHIDOME ,  KEITH A. MILLER ,  HAMID TAVASSOLI ,  ANDREW TOMKO

IPC: C23C14/34 ,  H01J37/34 ,  C23C14/56

Abstract: Embodiments of collimators and process chambers incorporating same are provided herein. In some embodiments, a collimator for use in a substrate processing chamber includes a ring; an adapter surrounding the ring and having an inner annular wall; and a plurality of spokes extending from the inner annular wall and intersecting at a central axis of the collimator.

公开(公告)号：US20140261180A1

公开(公告)日：2014-09-18

申请号：US13837742

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： GOICHI YOSHIDOME ,  RYAN HANSON ,  DONNY YOUNG ,  MUHAMMAD RASHEED ,  KEITH A. MILLER

IPC: C23C14/34

CPC classification number: C23C14/3407 ,  H01J37/3414 ,  H01J37/3435 ,  Y10T428/218 ,  Y10T428/219

Abstract: In some embodiments, a target assembly, for use in a substrate processing chamber having a process shield, may include a backing plate having a first side and an opposing second side, wherein the second side comprises a first surface having a first diameter bounded by a first edge; a target material having a first side bonded to the first surface of the backing plate; wherein the first edge is an interface between the backing plate and the target material; a plurality of slots disposed along an outer periphery of the backing plate extending from the first side of the backing plate toward the second side of the backing plate, wherein the plurality of slots are configured to align the target assembly with respect to the process shield.

Abstract translation: 在一些实施例中，用于具有过程屏蔽的衬底处理室中的目标组件可以包括具有第一侧和相对的第二侧的背板，其中第二侧包括具有第一直径的第一表面， 第一边 目标材料，其具有接合到所述背板的第一表面的第一侧; 其中所述第一边缘是所述背板和所述目标材料之间的界面; 沿着所述背板的第一侧面延伸到所述背板的所述第二侧面的沿着所述背板的外周设置的多个槽，其中所述多个槽被配置成相对于所述工艺防护罩对准所述目标组件。

公开(公告)号：US20140261175A1

公开(公告)日：2014-09-18

申请号：US14198569

申请日：2014-03-05

Applicant: Applied Materials, Inc.

Inventor： RYAN HANSON ,  GOICHI YOSHIDOME ,  NELSON YEE

IPC: C23C14/34

CPC classification number: C23C14/564 ,  H01J37/32623 ,  H01J37/32651 ,  H01J37/34 ,  H01J37/3447 ,  Y10T428/13 ,  Y10T428/131

Abstract: A process shield may include an elongated annular body having an outer surface and an inner surface; a lip extending radially outward from the outer surface of the body proximate a first end of the body such that a first portion of the body extends beyond the lip toward the first end; a plurality of openings in the lip; and a pin disposed in each of the plurality of openings to align the target assembly atop the process shield when the lid is placed atop the process shield, wherein the pin comprises an elongated body having a first surface with a beveled peripheral edge, wherein the first surface has a first diameter, a second surface opposing the first surface, wherein the second surface has a second diameter, and a sidewall, between the first surface and the second surface, wherein the sidewall has a concave portion having a third diameter.

Abstract translation: 过程屏蔽可以包括具有外表面和内表面的细长环形体; 靠近所述主体的第一端从所述主体的外表面径向向外延伸的唇部，使得所述主体的第一部分朝向所述第一端延伸超出所述唇缘; 唇部中的多个开口; 以及设置在所述多个开口中的每一个中的销，以在所述盖被放置在所述过程屏蔽件顶部时将所述目标组件对准所述过程屏蔽件，其中所述销包括细长主体，所述细长主体具有带有斜面周边边缘的第一表面， 表面具有第一直径，与第一表面相对的第二表面，其中第二表面具有在第一表面和第二表面之间的第二直径和侧壁，其中侧壁具有具有第三直径的凹部。