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公开(公告)号:US20230212732A1
公开(公告)日:2023-07-06
申请号:US17965802
申请日:2022-10-14
Applicant: WONIK QNC Corporation
Inventor: Yoonjae YU , Seungyoung Oh , Eunyoung CHOI , Joohee JANG , Soyoung CHOI , Sanghyun CHO
Abstract: Disclosed are a processing method for fluorination of a fluorination-target component for semiconductor fabrication equipment, which may realize high density and high strength by fluorinating the fluorination-target component using a fluorinating gas excited into plasma, and at the same time, may significantly reduce plasma contaminant particles which are generated during formation of a fluoride coating, and a fluorinated component obtained by the method.
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公开(公告)号:US20230131168A1
公开(公告)日:2023-04-27
申请号:US17955561
申请日:2022-09-29
Applicant: WONIK QNC Corporation
Inventor: Yoonjae YU , Seungyoung Oh , Eunyoung Choi , Joohee Jang , Soyoung Choi
Abstract: Disclosed are a processing method for fluorination of a fluorination-target component, which may realize high density and high strength by forming a fluoride coating based on atmospheric pressure high-frequency plasma on various components for semiconductor processes and, at the same time, may significantly increase productivity, and in particular, may ensure normal etch rate in a large-area semiconductor fabrication system, and a fluorinated component obtained by the method.
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公开(公告)号:US11898254B2
公开(公告)日:2024-02-13
申请号:US17965802
申请日:2022-10-14
Applicant: WONIK QNC Corporation
Inventor: Yoonjae Yu , Seungyoung Oh , Eunyoung Choi , Joohee Jang , Soyoung Choi , Sanghyun Cho
Abstract: Disclosed are a processing method for fluorination of a fluorination-target component for semiconductor fabrication equipment, which may realize high density and high strength by fluorinating the fluorination-target component using a fluorinating gas excited into plasma, and at the same time, may significantly reduce plasma contaminant particles which are generated during formation of a fluoride coating, and a fluorinated component obtained by the method.
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公开(公告)号:US11872104B2
公开(公告)日:2024-01-16
申请号:US17053055
申请日:2018-07-12
Applicant: WONIK QNC CORPORATION
Inventor: Yoon Gwan Ju , Byung No Choi , Geon Rae Kim , Jae Hee Jung
CPC classification number: A61C8/0012 , A61C8/0087 , A61C19/06
Abstract: The present disclosure relates to an implant surface modification treatment device including an internal electrode having a barrel-shaped structure and a surface on which a plurality of transmission parts are formed, an ultraviolet (UV) discharge vessel having a barrel-shaped structure that accommodates the internal electrode and has a gas-filled area filled with a discharge gas that serves as a UV light source, and an external electrode accommodating the UV discharge vessel inside thereof, wherein an implant fixture is placed inside the internal electrode to perform surface modification.
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5.
公开(公告)号:US20250054948A1
公开(公告)日:2025-02-13
申请号:US18529028
申请日:2023-12-05
Applicant: HYUNDAI MOTOR COMPANY , KIA CORPORATION , WONIK QnC CORPORATION
Inventor: Je Sik Park , Hong Seok Min , Sung Woo Noh , Jeong Hyun Seo , Im Sul Seo , Ju Yeong Seong , Chung Bum Lim , Hyuk Chun Kwon , Ho Chang Lee , Seong Uk Oh , Ji Su Kim , Jong Hyun Park
IPC: H01M4/36 , C01B25/30 , C01B33/32 , C01G25/00 , C01G33/00 , C01G53/00 , H01M4/485 , H01M4/505 , H01M4/525
Abstract: A cathode active material with controlled rheological properties for lithium secondary batteries. In particular, the cathode active material for a lithium secondary battery includes: a core part comprising a lithium metal oxide; and a coating layer covering at least a portion of a surface of the core part and comprising an inorganic compound.
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6.
公开(公告)号:US20240363328A1
公开(公告)日:2024-10-31
申请号:US18637303
申请日:2024-04-16
Applicant: WONIK QNC Corporation
Inventor: Eun Young CHOI , Sang Hyun CHO , Seung Jin JUNG , Joo Hee JANG , So Young CHOI , Dong Ho SHIN , Jong Hwan MUN , Min Seob JUNG
IPC: H01L21/02 , C23C16/44 , H01L21/324
CPC classification number: H01L21/02046 , C23C16/4405 , H01L21/3245
Abstract: Provided is a method and an apparatus for dry-cleaning an aluminum nitride (AlN) heater for semiconductor fabrication equipment, which may efficiently remove fluorine-containing contaminants generated on the AlN heater during semiconductor fabrication processes, and especially, may effectively and simultaneously remove organic, inorganic metallic, and inorganic contaminants. The method for dry-cleaning an AlN heater for semiconductor fabrication equipment includes steps of: determining a laser to be used for the AlN heater; determining laser control factors required for cleaning the AlN heater with respect to the laser to be used determined in the step of determining the laser to be used; and cleaning the AlN heater by laser irradiation based on the laser control factors determined in the step of determining the laser control factors.
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公开(公告)号:US20240021822A1
公开(公告)日:2024-01-18
申请号:US18071799
申请日:2022-11-30
Applicant: Hyundai Motor Company , Kia Corporation , WONIK QnC CORPORATION
Inventor: Je Sik Park , Sang Heon Lee , Sung Woo Noh , Jeong Hyun Seo , Im Sul Seo , Ju Yeong Seong , Chung Bum Lim , Hyuk Chun Kwon , Ho Chang Lee , In Gu Choi , Ji Su Kim
CPC classification number: H01M4/62 , H01M4/366 , H01M4/525 , H01M2004/028
Abstract: A cathode active material for an all-solid-state battery including colloidal silica, a cathode active material, and a manufacturing method thereof are disclosed. It may be possible to achieve an enhancement in dispersion in a sulfide-based all-solid-state battery by controlling powder properties while reducing interfacial resistance between an electrolyte and a cathode active material of the sulfide-based all-solid-state battery.
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公开(公告)号:US20210361392A1
公开(公告)日:2021-11-25
申请号:US17053055
申请日:2018-07-12
Applicant: WONIK QNC CORPORATION
Inventor: Yoon Gwan JU , Byung No CHOI , Geon Rae KIM , Jae Hee JUNG
Abstract: The present disclosure relates to an implant surface modification treatment device including an internal electrode having a barrel-shaped structure and a surface on which a plurality of transmission parts are formed, an ultraviolet (UV) discharge vessel having a barrel-shaped structure that accommodates the internal electrode and has a gas-filled area filled with a discharge gas that serves as a UV light source, and an external electrode accommodating the UV discharge vessel inside thereof, wherein an implant fixture is placed inside the internal electrode to perform surface modification.