公开(公告)号：US07790627B2

公开(公告)日：2010-09-07

申请号：US12001381

申请日：2007-12-11

Applicant: Kunihiko Iwamoto ,  Toshihide Nabatame ,  Koji Tominaga ,  Tetsuji Yasuda

Inventor： Kunihiko Iwamoto ,  Toshihide Nabatame ,  Koji Tominaga ,  Tetsuji Yasuda

IPC: H01L21/8242 ,  H01L21/4763 ,  H01L21/461 ,  H01L21/302 ,  H01L21/469

CPC classification number: H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: A method of manufacturing a metal compound thin film is disclosed. The method may include forming a first metal compound layer on a substrate by atomic layer deposition, performing annealing on the first metal compound layer in an atmosphere containing a nitrogen compound gas, thereby diffusing nitrogen into the first metal compound layer, and forming a second metal compound layer on the first metal compound layer by atomic layer deposition.

Abstract translation: 公开了一种制造金属化合物薄膜的方法。 该方法可以包括通过原子层沉积在衬底上形成第一金属化合物层，在含有氮化合物气体的气氛中对第一金属化合物层进行退火，从而将氮扩散到第一金属化合物层中，并形成第二金属 通过原子层沉积在第一金属化合物层上的化合物层。

公开(公告)号：US20090096067A1

公开(公告)日：2009-04-16

申请号：US12333577

申请日：2008-12-12

Applicant: Kunihiko IWAMOTO ,  Koji TOMINAGA ,  Toshihide NABATAME ,  Tomoaki NISHIMURA

Inventor： Kunihiko IWAMOTO ,  Koji TOMINAGA ,  Toshihide NABATAME ,  Tomoaki NISHIMURA

IPC: H01L29/06 ,  C01B21/20

CPC classification number: H01L29/66575 ,  H01L21/28185 ,  H01L21/28194 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: After the surface of the substrate is cleaned, an interface layer or an antidiffusion film is formed. A metal oxide film is built upon the antidiffusion film. Annealing is done in an NH3 atmosphere so as to diffuse nitrogen in the metal oxide film. Building of the metal oxide film and diffusion of nitrogen are repeated several times, whereupon annealing is done in an O2 atmosphere. By annealing the film in an O2 atmosphere at a temperature higher than 650° C., the leak current in the metal oxide film is controlled.

Abstract translation: 在清洁基板的表面之后，形成界面层或反扩散膜。 金属氧化物薄膜是建立在防扩散薄膜上的。 退火在NH 3气氛中进行，以便在金属氧化物膜中扩散氮。 金属氧化物膜的构建和氮的扩散重复几次，随后在O 2气氛中进行退火。 通过在高于650℃的温度下在O 2气氛中退火该膜，可以控制金属氧化物膜中的漏电流。

公开(公告)号：US07482234B2

公开(公告)日：2009-01-27

申请号：US10928045

申请日：2004-08-27

Applicant: Kunihiko Iwamoto ,  Koji Tominaga ,  Toshihide Nabatame ,  Tomoaki Nishimura

Inventor： Kunihiko Iwamoto ,  Koji Tominaga ,  Toshihide Nabatame ,  Tomoaki Nishimura

IPC: H01L21/473

CPC classification number: H01L29/66575 ,  H01L21/28185 ,  H01L21/28194 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: After the surface of the substrate is cleaned, an interface layer or an antidiffusion film is formed. A metal oxide film is built upon the antidiffusion film Annealing is done in an NH3 atmosphere so as to diffuse nitrogen in the metal oxide film. Building of the metal oxide film and diffusion of nitrogen are repeated several times, whereupon annealing is done in an O2 atmosphere. By annealing the film in an O2 atmosphere at a temperature higher than 650° C., the leak current in the metal oxide film is controlled.

Abstract translation: 在清洁基板的表面之后，形成界面层或反扩散膜。 在抗扩散膜上构建金属氧化物膜。在NH 3气氛中进行退火，以便在金属氧化物膜中扩散氮。 金属氧化物膜的构建和氮的扩散重复几次，随后在O 2气氛中进行退火。 通过在高于650℃的温度下在O 2气氛中退火该膜，可以控制金属氧化物膜中的漏电流。

公开(公告)号：US20070218624A1

公开(公告)日：2007-09-20

申请号：US11724247

申请日：2007-03-15

Applicant: Hideki Satake ,  Toshihide Nabatame

Inventor： Hideki Satake ,  Toshihide Nabatame

IPC: H01L21/8242

CPC classification number: H01L29/513 ,  H01L21/28097 ,  H01L29/4975 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

Abstract: A method of manufacturing an MIS semiconductor device includes forming a high dielectric film as a gate insulator on a semiconductor substrate of a first conductivity type, heat-treating the semiconductor substrate in ambient with hydrogen and oxygen gases to form an interface layer between the semiconductor substrate and the high dielectric film, forming a conductive film on the high dielectric film after the interfacial layer is formed, processing the conductive film in a gate pattern to form a gate electrode, and doping the semiconductor substrate with impurities of a second conductivity type using the gate electrode as a mask to form source/drain regions.

Abstract translation: 一种制造MIS半导体器件的方法包括在第一导电类型的半导体衬底上形成作为栅极绝缘体的高介电膜，用氢气和氧气在环境中对半导体衬底进行热处理，以在半导体衬底 和高介电膜，在形成界面层之后在高电介质膜上形成导电膜，以栅极图案处理导电膜以形成栅电极，并使用第二导电类型的杂质掺杂半导体衬底 栅极电极作为掩模形成源极/漏极区域。

公开(公告)号：US07259058B2

公开(公告)日：2007-08-21

申请号：US10020314

申请日：2001-12-18

Applicant: Yasuhiro Shimamoto ,  Masahiko Hiratani ,  Yuichi Matsui ,  Satoshi Yamamoto ,  Toshihide Nabatame ,  Toshio Ando ,  Hiroshi Sakuma ,  Shinpei Iijima

Inventor： Yasuhiro Shimamoto ,  Masahiko Hiratani ,  Yuichi Matsui ,  Satoshi Yamamoto ,  Toshihide Nabatame ,  Toshio Ando ,  Hiroshi Sakuma ,  Shinpei Iijima

IPC: H01L21/8242

CPC classification number: H01L28/60 ,  C23C16/18 ,  H01L21/28556 ,  H01L21/28568 ,  H01L28/55 ,  H01L28/91

Abstract: A ruthenium electrode with a low amount of oxygen contamination and high thermal stability is formed by a chemical vapor deposition method. In the chemical vapor deposition method using an organoruthenium compound as a precursor, the introduction of an oxidation gas is limited to when the precursor is supplying, and the reaction is allowed to occur at a low oxygen partial pressure. Consequently, it is possible to form a ruthenium film with a low amount of oxygen contamination. Further, after formation of the ruthenium film, annealing at not less than the formation temperature is performed, thereby forming a ruthenium film with high thermal stability.

Abstract translation: 通过化学气相沉积法形成氧气污染少，热稳定性高的钌电极。 在使用有机钌化合物作为前体的化学气相沉积方法中，氧化气体的引入限于当前体供应时，并且允许反应在低氧分压下发生。 因此，可以形成氧含量低的钌膜。 此外，在形成钌膜之后，进行不低于形成温度的退火，由此形成热稳定性高的钌膜。

公开(公告)号：US20070054503A1

公开(公告)日：2007-03-08

申请号：US11510679

申请日：2006-08-28

Applicant: Hiroyuki Takaba ,  Toshihide Nabatame ,  Masaru Kadoshima

Inventor： Hiroyuki Takaba ,  Toshihide Nabatame ,  Masaru Kadoshima

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/0228 ,  C23C16/44 ,  C23C16/45525 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/022 ,  H01L21/28079 ,  H01L21/28194 ,  H01L21/3141 ,  H01L29/495 ,  H01L29/517

Abstract: A method of forming a film on a substrate includes a first step of carrying out first film formation on an insulation layer formed on the substrate by an ALD process, and a second step of carrying out second film formation in continuation to the first step by a CVD process.

Abstract translation: 在衬底上形成膜的方法包括：通过ALD工艺在形成在衬底上的绝缘层上进行第一膜形成的第一步骤;以及第二步骤，通过第一步骤进行第二膜形成 CVD工艺。

公开(公告)号：US20060180082A1

公开(公告)日：2006-08-17

申请号：US10550753

申请日：2004-03-24

Applicant: Kunihiko Iwamoto ,  Toshihide Nabatame ,  Koji Tominaga ,  Tetsuji Yasuda

Inventor： Kunihiko Iwamoto ,  Toshihide Nabatame ,  Koji Tominaga ,  Tetsuji Yasuda

IPC: C23C16/00

CPC classification number: H01L21/3141 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/56 ,  H01L21/3143 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31691

Abstract: A metal atomic layer and an oxygen atomic layer are formed in this order by ALD, followed by rapid heating through RTA (Rapid Thermal Annealing). This cycle of steps is repeated to form a high dielectric constant film.

Abstract translation: 通过ALD依次形成金属原子层和氧原子层，然后通过RTA（快速热退火）快速加热。 重复该步骤循环以形成高介电常数膜。

公开(公告)号：US06992022B2

公开(公告)日：2006-01-31

申请号：US10795430

申请日：2004-03-09

Applicant: Yasuhiro Shimamoto ,  Masahiko Hiratani ,  Yuichi Matsui ,  Toshihide Nabatame

Inventor： Yasuhiro Shimamoto ,  Masahiko Hiratani ,  Yuichi Matsui ,  Toshihide Nabatame

IPC: H01L21/31

CPC classification number: H01L28/60 ,  C23C16/18 ,  C23C16/409 ,  H01L21/28556 ,  H01L21/31604 ,  H01L27/10814 ,  H01L28/55

Abstract: A process for forming the lower and upper electrodes of a high dielectric constant capacitor in a semiconductor device from an organoruthenium compound by chemical vapor deposition. This chemical vapor deposition technique employs an organoruthenium compound, an oxidizing gas, and a gas (such as argon) which is hardly adsorbed to the ruthenium surface or a gas (such as ethylene) which is readily adsorbed to the ruthenium surface. This process efficiently forms a ruthenium film with good conformality in a semiconductor device.

公开(公告)号：US06917065B2

公开(公告)日：2005-07-12

申请号：US10681173

申请日：2003-10-09

Applicant: Tetsuo Fujiwara ,  Toshihide Nabatame ,  Takaaki Suzuki ,  Kazutoshi Higashiyama

Inventor： Tetsuo Fujiwara ,  Toshihide Nabatame ,  Takaaki Suzuki ,  Kazutoshi Higashiyama

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/108 ,  H01L27/115 ,  H01L29/06 ,  H01L29/76 ,  H01L31/062

CPC classification number: H01L27/11502 ,  H01L27/10805 ,  H01L27/1085 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65

Abstract: A ferroelectric capacitor of the type having a top electrode, a ferroelectric thin film, and a bottom electrode, is characterized in that said ferroelectric thin film is a perovskite-type oxide containing Pb and said upper and bottom electrodes contain an intermetallic compound composed of Pt and Pb. An electronic device is provided with said ferroelectric capacitor. This construction is designed to solve the following problems. In a non-volatile ferroelectric memory (FeRAM), a degraded layer occurs near the interface between the PZT and the electrode due to hydrogen evolved during processing or due to diffusion of Pb from the PZT into the electrode. A stress due to a difference in lattice constant occurs in the interface between the electrode and the ferroelectric thin film. The degraded layer and the interfacial stress deteriorate the initial polarizing characteristics of the ferroelectric capacitor and also greatly deteriorate the polarizing characteristics after switching cycles.

Abstract translation: 具有顶电极，铁电薄膜和底电极的铁电电容器的特征在于，所述铁电薄膜是含有Pb的钙钛矿型氧化物，所述上下电极含有由Pt构成的金属间化合物 和铅。 电子设备设有所述铁电电容器。 这种结构旨在解决以下问题。 在非易失性铁电存储器（FeRAM）中，由于在处理期间释放的氢或由于PZT向电极扩散Pb而在PZT和电极之间的界面附近出现劣化层。 在电极和铁电薄膜之间的界面产生由于晶格常数的差异引起的应力。 劣化层和界面应力劣化铁电电容器的初始极化特性，并且在开关周期后极大地降低极化特性。

公开(公告)号：US5849670A

公开(公告)日：1998-12-15

申请号：US572748

申请日：1995-12-14

Applicant: Toshihide Nabatame ,  Junichi Kawashima ,  Izumi Hirabayashi ,  Yuh Shiobara ,  Shoji Tanaka

Inventor： Toshihide Nabatame ,  Junichi Kawashima ,  Izumi Hirabayashi ,  Yuh Shiobara ,  Shoji Tanaka

IPC: C04B35/45 ,  C01G1/00 ,  C01G15/00 ,  H01B12/04 ,  H01B12/10 ,  H01F6/06 ,  H01L39/14 ,  H01L39/24 ,  H01B12/00

CPC classification number: H01L39/143 ,  H01L39/2425 ,  H01L39/2458 ,  Y10S428/93 ,  Y10S505/704 ,  Y10S505/705 ,  Y10T428/2929

Abstract: In order to provide a crystal oriented high quality thallium group superconducting wire having a high critical current density, thallium group superconducting film is formed on oxide single crystal fiber having plane facets and polygonal cross section in the thallium group superconducting wire, wherein c-axis of the thallium group superconducting film is oriented perpendicularly, and a- and b-axis are oriented in parallel to the longitudinal direction of the above fiber, respectively, and resulting to obtain a high quality thallium group superconducting wire with Jc of 10.sup.5 A/cm.sup.2 or more at 77K.

Abstract translation: 为了提供具有高临界电流密度的晶体取向的高品质铊族超导线，在铊族超导线中具有平面和多边形横截面的氧化物单晶纤维上形成铊基超导膜，其中c轴 铊组超导膜垂直取向，a轴和b轴分别与上述纤维的纵向平行取向，得到JC为105A / cm2的高品质铊基超导线，或 更多在77K。