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公开(公告)号：US20100302861A1
公开(公告)日：2010-12-02
申请号：US12805500
申请日：2010-08-03
Applicant: Seunghyun Moon , Kihwan Choi , Jaesung Sim , Jungdal Choi
Inventor： Seunghyun Moon , Kihwan Choi , Jaesung Sim , Jungdal Choi
CPC classification number: G11C16/3404
Abstract: Methods of programming or erasing a nonvolatile memory device having a charge storage layer including performing at least one unit programming or erasing loop, each unit programming or erasing loop including applying a programming pulse, an erasing pulse, a time delay, a soft erase pulse, soft programming pulse and/or a verifying pulse as a positive or negative voltage to a portion (for example, a word line or a substrate) of the nonvolatile memory device.
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公开(公告)号：US07778083B2
公开(公告)日：2010-08-17
申请号：US12191400
申请日：2008-08-14
Applicant: Seunghyun Moon , Kihwan Choi
Inventor： Seunghyun Moon , Kihwan Choi
IPC: G11C16/06
CPC classification number: G11C16/16 , G11C16/10 , H01L27/115 , H01L27/11521 , H01L27/11524
Abstract: Methods of programming or erasing a nonvolatile memory device having a charge storage layer including performing at least one unit programming or erasing loop, each unit programming or erasing loop including applying at least one programming pulse, at least one erasing pulse, at least one time delay, at least one soft erase pulse, at least one soft programming pulse and/or at least one verifying pulse as a positive or negative voltage to a portion (for example, a word line or a substrate) of the nonvolatile memory device.
Abstract translation: 编程或擦除具有电荷存储层的非易失性存储器件的方法包括执行至少一个单元编程或擦除循环，每个单元编程或擦除循环包括施加至少一个编程脉冲，至少一个擦除脉冲，至少一个时间延迟 ，至少一个软擦除脉冲，至少一个软编程脉冲和/或至少一个验证脉冲作为非易失性存储器件的一部分（例如，字线或衬底）的正或负电压。
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公开(公告)号：US20090055577A1
公开(公告)日：2009-02-26
申请号：US12191453
申请日：2008-08-14
Applicant: Seunghyun Moon , Kihwan Choi
Inventor： Seunghyun Moon , Kihwan Choi
IPC: G06F12/02
CPC classification number: G11C16/3404 , G11C16/0416 , G11C16/0483 , G11C16/10 , G11C2216/14 , H01L27/11524 , H01L27/11551 , H01L27/11578
Abstract: Example embodiments are directed to methods, memory devices, and systems for programming a nonvolatile memory device having a charge storage layer including performing at least one unit programming loop, each unit programming loop including, applying a programming pulse to at least two pages, applying a time delay to the at least two pages, and applying a verifying pulse to the at least two pages.
Abstract translation: 示例性实施例涉及用于编程具有电荷存储层的非易失性存储器件的方法，存储器件和系统，所述非易失性存储器件包括执行至少一个单元编程环路，每个单元编程回路包括将编程脉冲施加到至少两个页面， 至少两页的时间延迟，以及将验证脉冲施加到所述至少两个页面。
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公开(公告)号：US07940567B2
公开(公告)日：2011-05-10
申请号：US12191453
申请日：2008-08-14
Applicant: Seunghyun Moon , Kihwan Choi
Inventor： Seunghyun Moon , Kihwan Choi
IPC: G11C11/34
CPC classification number: G11C16/3404 , G11C16/0416 , G11C16/0483 , G11C16/10 , G11C2216/14 , H01L27/11524 , H01L27/11551 , H01L27/11578
Abstract: Example embodiments are directed to methods, memory devices, and systems for programming a nonvolatile memory device having a charge storage layer including performing at least one unit programming loop, each unit programming loop including, applying a programming pulse to at least two pages, applying a time delay to the at least two pages, and applying a verifying pulse to the at least two pages.
Abstract translation: 示例性实施例涉及用于编程具有电荷存储层的非易失性存储器件的方法，存储器件和系统，所述非易失性存储器件包括执行至少一个单元编程环路，每个单元编程回路包括将编程脉冲应用于至少两个页面， 至少两页的时间延迟，以及将验证脉冲施加到所述至少两个页面。
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公开(公告)号：US08462558B2
公开(公告)日：2013-06-11
申请号：US12805500
申请日：2010-08-03
Applicant: Seunghyun Moon , Kihwan Choi , Jaesung Sim , Jungdal Choi
Inventor： Seunghyun Moon , Kihwan Choi , Jaesung Sim , Jungdal Choi
CPC classification number: G11C16/3404
Abstract: Methods of programming or erasing a nonvolatile memory device having a charge storage layer including performing at least one unit programming or erasing loop, each unit programming or erasing loop including applying a programming pulse, an erasing pulse, a time delay, a soft erase pulse, soft programming pulse and/or a verifying pulse as a positive or negative voltage to a portion (for example, a word line or a substrate) of the nonvolatile memory device.
Abstract translation: 编程或擦除具有电荷存储层的非易失性存储器件的方法包括执行至少一个单元编程或擦除循环，每个单元编程或擦除循环包括应用编程脉冲，擦除脉冲，时间延迟，软擦除脉冲， 软编程脉冲和/或验证脉冲作为对非易失性存储器件的一部分（例如，字线或衬底）的正或负电压。
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公开(公告)号：US07813183B2
公开(公告)日：2010-10-12
申请号：US12119060
申请日：2008-05-12
Applicant: Seunghyun Moon , Kihwan Choi , Jaesung Sim , Jungdal Choi
Inventor： Seunghyun Moon , Kihwan Choi , Jaesung Sim , Jungdal Choi
IPC: G11C16/04
CPC classification number: G11C16/3404
Abstract: Methods of programming or erasing a nonvolatile memory device having a charge storage layer including performing at least one unit programming or erasing loop, each unit programming or erasing loop including applying a programming pulse, an erasing pulse, a time delay, a soft erase pulse, soft programming pulse and/or a verifying pulse as a positive or negative voltage to a portion (for example, a word line or a substrate) of the nonvolatile memory device.
Abstract translation: 编程或擦除具有电荷存储层的非易失性存储器件的方法包括执行至少一个单元编程或擦除循环，每个单元编程或擦除循环包括应用编程脉冲，擦除脉冲，时间延迟，软擦除脉冲， 软编程脉冲和/或验证脉冲作为对非易失性存储器件的一部分（例如，字线或衬底）的正或负电压。
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公开(公告)号：US20090052255A1
公开(公告)日：2009-02-26
申请号：US12191400
申请日：2008-08-14
Applicant: Seunghyun Moon , Kihwan Choi
Inventor： Seunghyun Moon , Kihwan Choi
CPC classification number: G11C16/16 , G11C16/10 , H01L27/115 , H01L27/11521 , H01L27/11524
Abstract: Methods of programming or erasing a nonvolatile memory device having a charge storage layer including performing at least one unit programming or erasing loop, each unit programming or erasing loop including applying at least one programming pulse, at least one erasing pulse, at least one time delay, at least one soft erase pulse, at least one soft programming pulse and/or at least one verifying pulse as a positive or negative voltage to a portion (for example, a word line or a substrate) of the nonvolatile memory device.
Abstract translation: 编程或擦除具有电荷存储层的非易失性存储器件的方法包括执行至少一个单元编程或擦除循环，每个单元编程或擦除循环包括施加至少一个编程脉冲，至少一个擦除脉冲，至少一个时间延迟 ，至少一个软擦除脉冲，至少一个软编程脉冲和/或至少一个验证脉冲作为非易失性存储器件的一部分（例如，字线或衬底）的正或负电压。
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公开(公告)号：US20080291737A1
公开(公告)日：2008-11-27
申请号：US12119060
申请日：2008-05-12
Applicant: Seunghyun MOON , Kihwan CHOI , Jaesung SIM , Jungdal CHOI
Inventor： Seunghyun MOON , Kihwan CHOI , Jaesung SIM , Jungdal CHOI
IPC: G11C16/06
CPC classification number: G11C16/3404
Abstract: Methods of programming or erasing a nonvolatile memory device having a charge storage layer including performing at least one unit programming or erasing loop, each unit programming or erasing loop including applying a programming pulse, an erasing pulse, a time delay, a soft erase pulse, soft programming pulse and/or a verifying pulse as a positive or negative voltage to a portion (for example, a word line or a substrate) of the nonvolatile memory device.
Abstract translation: 编程或擦除具有电荷存储层的非易失性存储器件的方法包括执行至少一个单元编程或擦除循环，每个单元编程或擦除循环包括应用编程脉冲，擦除脉冲，时间延迟，软擦除脉冲， 软编程脉冲和/或验证脉冲作为对非易失性存储器件的一部分（例如，字线或衬底）的正或负电压。
