Abstract:
A socket structure is disclosed, comprising a base seat combined with an external cover, in which the top plane of the external cover has a socket panel, and a high-low tilted positioning plate is installed inside the external cover, with a high edge of the positioning plate being abutted by a movable abutting element, and the bottom end of the abutting element includes an elastic body; also, a release element is placed between the socket panel and the positioning plate, and the abutting element can be driven to move by means of a push button control located on one side of the socket panel.
Abstract:
A method for fabricating semiconductor devices with fine patterns includes the steps of providing a semiconductor substrate, forming a first photoresist layer on the semiconductor substrate, forming a second photoresist layer on the first photoresist layer, and performing an exposing process to change the state of at least one first portion of the first photoresist layer and the state of at least one second portion of the second photoresist layer. The conventional double patterning technique requires that the exposure processes be performed twice, which requires very precise alignment between the two exposure processes. In contrast, the embodiment of the present invention can perform the double patterning process with only one exposure process without requiring the precise alignment between the two exposure processes.
Abstract:
A method for haze control in a semiconductor process, includes: providing an exposure tool with a photocatalyzer coating inside and exposing a wafer in the exposure tool in the presence of activation of the photocatalyzer coating. The photocatalyzer coating may be formed within an opaque region of a reticle.
Abstract:
An apparatus for homogenizing the developer concentration on the wafer and reducing the developer cost and the method thereof are provided in the present invention. The developer is provided on the wafer which then is spun to distribute the developer on the wafer. Next, the mechanical turbulence of the developer is produced on the wafer by the turbulence device or the mega-sonic vibrator. The apparatus is able to improve the uniformity of developer concentration, and the developer consumption is reduced.
Abstract:
A pixel structure including a control unit, an organic electro-luminescent (OEL) unit, and a filter structure is provided. The control unit is disposed on a substrate and is driven by a scan line and a data line. The OEL unit is disposed on the substrate, and includes a transparent electrode, a light-emitting layer, and a metal electrode. The transparent electrode is electrically connected with the control unit, and the light-emitting layer and the metal electrode are sequentially placed on the transparent electrode. The filter structure is sandwiched between the substrate and the OEL unit, and the filter structure includes a plurality of the first and second dielectric layers. The first and second dielectric layers are alternately stacked, and the refractive index of the first dielectric layers is different from that of the second dielectric layers.
Abstract:
A touch pen comprises a barrel, a laser module, a touch head and batteries: the barrel with a hollow interior which is separated into a barrel part and a necking nib part; the laser module which is disposed in the barrel and close to the nib part for generation of a laser beam as one pointer; the touch head featuring conductivity, covering the nib part and provided with a penetrating optical channel for a laser beam; the batteries held in the barrel part and supplying electricity necessary to the laser module; the touch pen is applicable to operation of a capacitive touch panel and regarded as one pointer projecting a laser spot.
Abstract:
A semiconductor manufacturing process is provided. First, a wafer with a material layer and an exposed photoresist layer formed thereon is provided, wherein the wafer has a center area and an edge area. Thereafter, the property of the exposed photoresist layer is varied, so as to make a critical dimension of the exposed photoresist layer in the center area different from that of the same in the edge area. After the edge property of the exposed photoresist layer is varied, an etching process is performed to the wafer by using the exposed photoresist layer as a mask, so as to make a patterned material layer having a uniform critical dimension formed on the wafer.
Abstract:
A computer includes an expansion card, a mother board and a connector. The mother board includes an expansion slot thereon. The expansion slot corresponds to the expansion card. The connector connects the expansion card and the expansion slot.
Abstract:
A semiconductor lithography process. A photoresist film is coated on a substrate. The photoresist film is subjected to a flood exposure to blanket expose the photoresist film across the substrate to a first radiation with a relatively lower dosage. The photoresist film is then subjected to a main exposure using a photomask to expose the photoresist film in a step and scan manner to a second radiation with a relatively higher dosage. After baking, the photoresist film is developed.
Abstract:
A computer includes an expansion card, a mother board and a connector. The mother board includes an expansion slot thereon. The expansion slot corresponds to the expansion card. The connector connects the expansion card and the expansion slot.